MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● Driving available with PMOS IC ouput ● Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard MOS-bipolar logic IC 16 →O1 IN1→ 1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 9 8 OUTPUT →COM COMMON 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM FUNCTION The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M54523FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg OUTPUT INPUT 2.7k 5k 3k The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Parameter Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Storage temperature Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Collector-emitter voltage Collector current Operating temperature GND Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50 Ta = 25°C, when mounted on board 1.47(P)/1.00(FP) –20 ~ +75 –55 ~ +125 Unit V mA V mA V W °C °C Jan.2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) Limits Parameter VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC VIH “H” input voltage VIL “L” input voltage Duty Cycle P : no more than 8% FP : no more than 8% Duty Cycle P : no more than 30% FP : no more than 25% IC ≤ 400mA Parameter V (BR) CEO Collector-emitter breakdown voltage II VF IR h FE max 50 0 — 400 Unit V 0 — 200 3.85 3.4 0 — — — 25 25 0.6 V V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol VCE(sat) typ — mA IC ≤ 200mA ELECTRICAL CHARACTERISTICS min 0 Limits Test conditions ICEO = 100µA VI = 3.85V, I C = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25°C min 50 — — typ* — 1.2 1.0 max — 2.4 1.6 — — — — 1000 1.2 9.5 1.4 — 2500 1.8 18 2.4 100 — Unit V V mA V µA — * : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Symbol ton toff Parameter Turn-on time Turn-off time Limits Test conditions CL = 15pF (note 1) min — typ 10 max — — 120 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Vo INPUT 50% 50% Measured device RL OPEN OUTPUT PG OUTPUT 50Ω 50% 50% CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VP = 3.85VP-P (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan.2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 M54523FP 1.0 0.5 0 Collector current Ic (mA) 500 25 50 75 3 200 •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 4 5 6 7 500 1.0 1.5 2.0 1 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 20 40 60 80 Duty cycle (%) Duty Cycle-Collector Characteristics (M54523FP) Duty Cycle-Collector Characteristics (M54523FP) 500 1 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 0.5 400 0 100 300 0 0 Duty cycle (%) 400 100 Ta = 75°C Ta = 25°C Ta = –20°C 100 Duty Cycle-Collector Characteristics (M54523P) 2 500 VI = 3.85V Duty Cycle-Collector Characteristics (M54523P) 300 0 200 Output saturation voltage VCE(sat) (V) 400 0 300 Ambient temperature Ta (°C) 1 100 400 0 100 Collector current Ic (mA) 0 Collector current Ic (mA) Collector current Ic (mA) M54523P 1.5 20 40 60 Duty cycle (%) 80 3 4 5 6 7 100 Collector current Ic (mA) Power dissipation Pd (W) 2.0 3 4 5 6 7 100 400 300 1 200 2 3 4 •The collector current values represent the current per circuit. 5 •Repeated frequency ≥ 10Hz 76 •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 0 20 40 60 80 100 Duty cycle (%) Jan.2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Input Characteristics 104 DC amplification factor hFE Input Current II (mA) 16 12 Ta = 75°C Ta = 25°C Ta = –20°C 8 4 0 0 8 16 24 VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 3 103 7 5 3 102 1 10 32 3 5 7 102 3 5 7 103 Input voltage VI (V) Collector current IcC (mA) Grounded Emitter Transfer Characteristics Clamping Diode Characteristics 500 500 Forward bias current IF (mA) Collector current Ic (mA) 7 5 400 VCE = 4V Ta = 75°C Ta = 25°C Ta = –20°C 300 200 100 0 0 1 2 3 Input voltage VI (V) 4 5 Ta = 75°C Ta = 25°C Ta = –20°C 400 300 200 100 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Jan.2000