ON MMBT5551M3T5G Npn high voltage transistor Datasheet

MMBT5551M3T5G
NPN High Voltage
Transistor
The MMBT5551M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose high
voltage applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
COLLECTOR
3
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
160
Vdc
Collector −Base Voltage
VCBO
180
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
60
mAdc
Symbol
Max
Unit
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
470
°C/W
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
265
2.1
mW
mW/°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1
2
EMITTER
MARKING
DIAGRAM
3
2
1
AH
M
SOT−723
CASE 631AA
STYLE 1
AH M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBT5551M3T5G
Package
Shipping†
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBT5551M3/D
MMBT5551M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
160
−
180
−
6.0
−
−
−
100
100
−
50
80
80
30
−
250
−
−
−
0.15
0.20
−
−
1.0
1.0
−
−
50
100
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
ICES
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
−
Vdc
Vdc
nA
MMBT5551M3T5G
500
300
h FE, DC CURRENT GAIN
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
200
25°C
100
-55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
Figure 2. Collector Saturation Region
101
1.0
TJ = 25°C
100
10-1
0.8
TJ = 125°C
10-2
IC = ICES
75°C
REVERSE
10-3
FORWARD
25°C
10-4
10-5
0.4
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.3
0.2
0.1
0
0.1
0.2
0.3 0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
Figure 3. Collector Cut−Off Region
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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3
50
100
MMBT5551M3T5G
θV, TEMPERATURE COEFFICIENT (mV/ °C)
2.5
2.0
TJ = - 55°C to +135°C
1.5
1.0
Vin
0
- 1.0
qVB for VBE(sat)
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
- 1.5
- 2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
RB
Vout
5.1 k
100
Vin
1N914
1000
IC/IB = 10
TJ = 25°C
TJ = 25°C
500
20
200
t, TIME (ns)
300
10
Cibo
7.0
5.0
Cobo
3.0
tr @ VCC = 120 V
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
20
2.0
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
10
0.2 0.3 0.5
20
VR, REVERSE VOLTAGE (VOLTS)
20 30
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
Figure 8. Turn−On Time
1.0
5000
tf @ VCC = 120 V
3000
2000
IC/IB = 10
TJ = 25°C
tf @ VCC = 30 V
1000
t, TIME (ns)
C, CAPACITANCE (pF)
RC
Figure 6. Switching Time Test Circuit
30
1.0
0.2
3.0 k
Values Shown are for IC @ 10 mA
Figure 5. Temperature Coefficients
100
70
50
VCC
30 V
100
0.25 mF
10 ms
INPUT PULSE
- 0.5
- 2.5
0.1
VBB
-8.8 V
10.2 V
qVC for VCE(sat)
0.5
500
300
ts @ VCC = 120 V
200
100
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
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4
100
200
50
100
200
MMBT5551M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
1
e
2
E
HE
L
b 2X
0.08 (0.0032) X Y
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
A
b
b1
C
D
E
e
HE
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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5
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For additional information, please contact your local
Sales Representative
MMBT5551M3/D
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