LRC MMBT5401LT1 High voltage transistor(pnp silicon) Datasheet

LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
MMBT5401LT1
3
COLLECTOR
3
1
BASE
1
2
2
EMITTER
CASE
318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
Emitter–Base Voltage
V CBO
V EBO
– 150
– 160
– 5.0
Vdc
Vdc
Vdc
IC
– 500
mAdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
556
°C/W
PD
300
mW
R θJA
T J , Tstg
2.4
417
–55to+150
mW/°C
°C/W
°C
θJA
DEVICE MARKING
MMBT5401LT1=2L
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Ma x
– 150
—
– 160
—
-5.0
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Emitter-BAse Breakdown Voltage
(I E= –10µAdc,I C=0)
Collector Cutoff Current
(V CB = –120 Vdc, IE= 0)
(V CB = –120 Vdc, IE= 0, T A=100 °C)
V (BR)CEO
Vdc
V (BR)CBO
Vdc
V(BR)EBO
Vdc
I CES
—
– 50
nAdc
—
– 50
µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M19–1/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
50
60
50
––
240
––
––
––
– 0.2
– 0.5
Unit
ON CHARACTERISTICS (2)
DC Current Gain
(IC = –1.0mAdc, V CE = –5.0 Vdc)
(IC = –10 mAdc, V CE = –5.0 Vdc)
(IC = –50 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
hFE
––
VCE(sat)
Vdc
VBE(sat)
Vdc
(IC = –10 mAdc, I B = –1.0 mAdc)
––
– 1.0
(IC = –50 mAdc, I B = –5.0 mAdc)
––
– 1.0
100
300
––
6.0
40
200
––
8.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz)
Output Capacitance
(VCB= –10 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz)
Noise Figure
(IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz)
f
MHz
T
C obo
pF
h fe
—
NF
dB
M19–2/4
LESHAN RADIO COMPANY, LTD.
MMBT5401LT1
200
150
h FE, CURRENT GAIN
T J=125°C
100
25°C
70
50
–55°C
V
V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
CE
CE
= –1.0 V
= –5.0 V
20
30
50
100
I C , COLLECTOR CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
I
0.5
C
=1.0mA
100 mA
30 mA
10mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10 3
I C , COLLECTOR CURRENT (µA)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
V
CE
= 30 V
10 2
I C= I
CES
10 1
T J = 125°C
10 0
75°C
10 -1
10 -2
REVERSE
25°C
10 -3
- 0.3 - 0.2
- 0.1
FORWARD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V BE , BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
M19–3/4
LESHAN RADIO COMPANY, LTD.
θ V , TEMPERATURE COEFFICIENT (mV/° C)
MMBT5401LT1
1.0
T J =25°C
0.8
0.7
V
0.6
BE(sat)
@ I C /I B =10
0.5
0.4
0.3
0.2
V
CE(sat)
@ I C /I B =10
0.1
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
20 30
50
100
T J = –55°C to 135°C
2.0
1.5
1.0
0.5
θ
VC
for V
CE(sat)
0
- 0.5
- 1.0
- 1.5
θ VB for V
BE(sat)
- 2.0
- 2.5
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
V
V
BB
100
CC
–30 V
+8.8 V
10.2V
V
10
3.0 k
100
R
C
in
0.25µF
10µs
INPUT PULSE
t r , t f < 10 ns
DUTY CYCLE = 1.0%
V
R
V
B
5.1 k
100
in
1N914
Values Shown are for I C @ 10 mA
out
T J =25°C
70
50
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
0.9
2.5
30
C
20
ibo
10
7.0
C
5.0
obo
3.0
2.0
1.0
0.2
0.3
Figure 6. Switching Time Test Circuit
0.5
1.0
2.0
3.0
5.0
10
20
V R , REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
1000
700
500
100
I C /I B =10
t r @V
T J= 25°C
70
50
= 120V
t r @V
CC
30
= 30V
20
200
t, TIME (ns)
t, TIME (ns)
300
CC
100
70
50
I C /I B= 10
t f @V CC= 120V
T J= 25°C
t f@ V
10
CC
= 30V
t s @V
7.0
CC
= 120V
5.0
3.0
30
t d @ V BE(off)= 1.0V
V CC = 120V
20
2.0
1.0
10
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
I C , COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
100
200
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
M19–4/4
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