MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION COMMON COM 1 16 14 ←IN4 INPUT4 INPUT1 IN1→ 3 4 GND 5 13 GND 12 11 ←IN3 INPUT3 INPUT2 IN2→ 6 FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Ic(max) = 1.5A) Á With clamping diodes Á Wide operating temperature range (Ta = –20 to +75°C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC 8 9 16P4(P) Package type 16P2N-A(FP) NC NC : No connection CIRCUIT DIAGRAM COM OUTPUT INPUT FUNCTION The M54532P and M54532FP each have four circuits consisting of NPN Darlington transistors. They have resistance of 340Ω between input transistor bases and input pins. A clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin. The collector current is 1.5A maximum. Collector-emitter supply voltage is 50V maximum. The M54532FP is enclosed in a molded small flat package, enabling space-saving design. 10 →O3 OUTPUT3 OUTPUT2 O2← 7 COMMON COM NC 15 →O4 OUTPUT4 OUTPUT1 O1← 2 340 5.5K 3K GND The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter Collector-emitter voltage VI Collector current Input voltage VR Clamping diode reverse voltage IF Clamping diode forward current Pd Power dissipation Topr Tstg Operating temperature Storage temperature Conditions Output, H Current per circuit output, L Ratings –0.5 ~ +50 1.5 –0.5 ~ +10 Pulse Width ≤ 10ms, Duty Cycle ≤ 5% Pulse Width ≤ 100ms, Duty Cycle ≥ 5% Ta = 25°C, when mounted on board 50 1.5 1.25 1.92(P)/1.00(FP) –20 ~ +75 –55 ~ +125 Unit V A V V A W °C °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO Parameter Output voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) IC VIH VIL (Unless otherwise noted, Ta = –20 ~ +75°C) Duty Cycle P : no more than 4% FP : no more than 2% Duty Cycle P : no more than 18% FP : no more than 9% Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II h FE 0 — 50 0 — 1.25 0 — 0.7 3 0 — — 6 V 0.4 V max Unit V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol IR VF Limits typ A “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS min Limits Test conditions typ+ — 1.3 max — 2.2 Unit ICEO = 100µA II = 2mA, IC = 1.25A min 50 — Input current Clamping diode reverse current II = 2mA, IC = 0.7A VI = 3V — — 1.1 5 1.7 8.5 mA VR = 50V — — 100 µA Clamping diode forward voltage DC amplification factor IF = 1.25A VCE = 4V, IC = 1A, Ta = 25°C — 800 1.6 7000 2.3 — V — V V + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter ton Turn-on time toff Turn-off time Limits Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT min — typ 10 max — — 500 — Unit ns ns TIMING DIAGRAM INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 3VP-P (2) Input-output conditions : RL = 8.3Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 2.0 II = 2mA Collector current Ic (A) Power dissipation Pd (W) M54532P 1.5 M54532FP 1.0 0.5 0 25 50 75 Ta = 25°C 0.5 0 100 Ta = –20°C ➁ ➂ ➃ •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 2.0 1.5 1.0 ➀ 0.5 ➁ ➂ ➃ 0 100 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54532FP) Duty-Cycle-Collector Characteristics (M54532FP) 1.5 1.0 ➀ 0.5 ➁ ➂ ➃ 20 40 60 Duty cycle (%) 80 100 2.0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 Collector current Ic (A) 2.0 0 Collector current Ic (A) ➀ 0 1.5 Duty-Cycle-Collector Characteristics (M54532P) 2.0 0.5 1.0 Duty-Cycle-Collector Characteristics (M54532P) 1.0 0 0.5 Output saturation voltage VCE (sat) (V) 1.5 0 0 Ambient temperature Ta (°C) 2.0 Collector current Ic (A) 1.0 Ta = 75°C 0 Collector current Ic (A) 1.5 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 1.5 1.0 0.5 0 ➀ ➁ ➂ ➃ 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics 105 7 5 VCE = 4V VCE = 4V 3 2 Ta = 75°C 104 7 5 Ta = 25°C 3 2 Ta = –20°C 103 7 5 Collector current Ic (A) DC amplification factor hFE Grounded Emitter Transfer Characteristics 1.6 1.2 0.8 Ta = 75°C Ta = 25°C 0.4 Ta = –20°C 3 2 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 0 0 1.0 1.5 2.0 Input voltage VI (V) Collector current Ic (mA) Clamping Diode Characteristics Input Characteristics 2.0 25 Forward bias current IF (A) Ta = 25°C 20 Input current II (mA) 0.5 Ta = –20°C 15 Ta = 75°C 10 5 1.5 1.0 Ta = 25°C 0.5 Ta = 75°C Ta = –20°C 0 0 2 4 6 Input voltage VI (V) 8 10 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999