CEL NESG3032M14-A Npn silicon germanium rf transistor Datasheet

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
NESG3032M14
NESG3032M14-A
Package
Quantity
4-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M14, 1208 package)
(Non reel)
• Pin 1 (Collector), Pin 4 (Emitter) face the
(Pb-Free)
NESG3032M14-T3 NESG3032M14-T3-A
Supplying Form
perforation side of the tape
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
150
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005
NESG3032M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
⏐S21e⏐
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
−
dB
Noise Figure
NF
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.60
0.85
dB
Associated Gain
Ga
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
17.5
−
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.15
0.25
pF
17.5
20.5
−
dB
DC Current Gain
hFE
Note 1
RF Characteristics
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
Note
MSG
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
12.5
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
24.0
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
FB
Marking
zN
hFE Value
220 to 380
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
2
Data Sheet PU10575EJ01V0DS
NESG3032M14
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) (UNIT: mm)
1.0±0.05
0.15±0.05
2
0.11+0.1
–0.05
1
zN
4
0.8
0.5±0.05
1.2+0.07
–0.05
3
0.8+0.07
–0.05
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
NC (Connected with Pin 2)
Data Sheet PU10575EJ01V0DS
3
NESG3032M14
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M8E 00. 4 - 0110
4
Data Sheet PU10575EJ01V0DS
NESG3032M14
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
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Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
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< 1000 PPM
Not Detected
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< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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