Sanyo FC21 High-frequency amplifier, am tuner rf amplifier application Datasheet

Ordering number : ENN7021
FC21
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
FC21
High-Frequency Amplifier,
AM tuner RF Amplifier Applications
•
Package Dimensions
The FC21 contains both a 2SK1740 equivalent chip
and a 2SC2812 equivalent chip in the CP package,
thus realizes higher efficiency in device mounting
on the PCB.
unit : mm
2122
[FC21]
5
1.9
0.95 0.95
4
3
0.16
0.6
Features
0.8
1.1
1
2
0.4
2.9
0.6
1.6
2.8
0 to 0.1
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CP5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
VDSX
VGDS
40
V
--40
V
mA
IG
ID
10
Drain Current
75
mA
Allowable Power Dissipation
PD
400
mW
Collector-to-Base Voltage
VCBO
55
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
[TR]
Collector Current
V
IC
150
ICP
IB
300
mA
Base Current
30
mA
Collector Dissipation
PC
200
mW
Total Dissipation
PT
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current(Pulse)
mA
[Common Ratings]
Marking : 1C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81001 TS IM TA-1526 No.7021-1/5
FC21
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[FET]
Gate-to-Drain Breakdown Voltage
V(BR)GDS
Gate Cutoff Current
IG=--10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=100µA
--40
V
Cutoff Voltage
IGSS
VGS(off)
Drain Current
IDSS
VDS=10V, VGS=0
Forward Transfer Admittance
yfs
Ciss
VDS=10V, VGS=0, f=1kHz
Input Capacitance
VDS=10V, VGS=0, f=1MHz
11
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0, f=1MHz
2.5
pF
VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz
1.5
dB
Noise Figure
NF
--1.0
--2.0
--3.0
--5.0
V
75*
mA
40*
22
nA
30
mS
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Gain-Bandwidth Product
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
135
VCE=6V, IC=10mA
100
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Cob
VCE(sat)
VBE(sat)
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
3
0.1
0.8
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=10µA, IE=0
IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
MHz
pF
V
V
0.5
1.0
55
V
50
V
6
V
Electrical Connection
* : The FC21 is classified by IDSS as follows : (unit : mA)
J
µA
µA
600
fT
Rank
0.1
0.1
K
B
L
E/D
S
IDSS
40 to 52
48 to 63
57 to 75
The specifications shown above are for each individual FET or transistor.
C
ID -- VDS
[FET]
VGS=0
--0.5V
40
--1.0V
--1.5V
20
[FET]
60
VGS=0
--0.5V
40
--1.0V
--1.5V
20
--2.0V
--2.0V
--2.5V
--3.0V
0
0
ID -- VDS
80
Drain Current, ID -- mA
60
--3.0V
--2.5V
0
2
3
4
5
Drain-to-Source Voltage, VDS -- V
ITR01960
ID -- VGS
[FET]
0
4
8
12
16
20
Drain-to-Source Voltage, VDS -- V
ITR01961
ID -- VGS
100
[FET]
80
A
40
m
25
°C
5°
C
40
°C
75
--2
A
m
55
SS
=7
5m
40
60
Ta
=
A
60
Drain Current, ID -- mA
80
20
20
0
--6
--5
--4
--3
--2
Gate-to-Source Voltage, VGS -- V
--1
0
ITR01963
100
VDS=10V
IDSS=60mA
VDS=10V
--6
--5
--4
--3
--2
Gate-to-Source Voltage, VGS -- V
--1
0
0
ITR01964
No.7021-2/5
Drain Current, ID -- mA
1
ID
Drain Current, ID -- mA
80
G
FC21
VGS(off) -- IDSS
6
6
4
3
2
--1.0
4
5
7
3
2
yfs -- IDSS
5
Forward Transfer Admittance, yfs -- mS
2
yfs1(I =10m
A)
D
10
7
5
7
100
ITR01967
Drain Current, IDSS -- mA
Ciss -- VDS
7
2
10
7
5
3
2
1.0
2
3
5
7
10
2
Drain-to-Source Voltage, VDS -- V
PD -- Ta
500
5
3
3
5
ITR01981
A
mA
55m
3
5
=40
I DSS
2
A
75m
10
7
5
3
3
5
7
2
10
7
2
100
ITR01968
Crss -- VDS
2
3
[FET]
VDS=10V
f=1kHz
Drain Current, ID -- mA
Reverse Transfer Capacitance, Crss -- pF
5
100
ITR01966
yfs -- ID
[FET]
VGS=0
f=1MHz
7
7
2
2
5
4
5
Drain Current, IDSS -- mA
100
=0)
yfs2(V GS
3
4
[FET]
VDS=10V
f=1kHz
3
3
100
ITR01965
Drain Current, IDSS -- mA
Forward Transfer Admittance, yfs -- mS
4
10
3
Input Capacitance, Ciss -- pF
[FET]
ID=10mA
VGS=0
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Cutoff Voltage, VGS(off) -- V
5
Allowable Power Dissipation, PD -- mW
RDS(on) -- IDSS
[FET]
VDS=10V
IDSS=100µA
[FET]
VGS=0
f=1MHz
10
7
5
3
2
1.0
7
5
1.0
2
3
5
7
10
2
Drain-to-Source Voltage, VDS -- V
3
5
ITR01982
[FET]
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR01983
No.7021-3/5
FC21
IC -- VCE
[TR]
200
30µA
25µA
20µA
8
15µA
4
10µA
80
40
0
0
10
20
30
40
50
Collector-to-Emitter Voltage, VCE -- V
0
Gain-Bandwidth Product, f T -- MHz
7
Ta=75°C
5
--25°C
25°C
3
2
100
7
5
0.1
2
3
5
2
1.0
3
5
2
10
3
5
Collector Current, IC -- mA
[TR]
5
3
2
1.0
7
5
1.2
IT03593
[TR]
VCE=6V
5
3
2
100
7
5
3
2
3
5
7
10
2
3
5
7 100
2
3
IT03595
VCE(sat) -- IC
3
[TR]
IC / IB=10
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
1.0
Collector Current, IC -- mA
f=1MHz
10
0.8
7
2
1.0
100 2 3
IT03594
Cob -- VCB
2
0.6
f T -- IC
1000
VCE=6V
1000
0.4
Base-to-Emitter Voltage, VBE -- V
[TR]
2
0.2
IT03592
hFE -- IC
3
DC Current Gain, hFE
120
IB=0
0
Output Capacitance, Cob -- pF
160
25°C
--25°C
35µA
12
Ta=75°
C
40µA
5µA
1.0
7
5
3
2
0.1
7
5
3
2
3
2
5
7
1.0
2
Collector-to-Base Voltage, VCB -- V
7 100
IT03596
PC -- Ta
[TR]
250
Collector Dissipation, PC -- W
[TR]
VCE=6V
50µA
45µA
16
IC -- VBE
240
Collector Current, IC -- mA
Collector Current, IC -- mA
20
3
5
7
2
10
3
5
0.01
1.0
2
3
5
7
10
2
3
5
7 100
Collector Current, IC -- mA
2
3
IT03597
200
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR10349
No.7021-4/5
FC21
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2001. Specifications and information herein are subject
to change without notice.
PS No.7021-5/5
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