MITSUBISHI SEMICONDUCTOR <HYBRID IC> M57115L-01 THE POWER SUPPLY DC-DC CONVERTER FOR IGBT MODULE GATE DRIVE OUTLINE DRAWING Dimensions: mm 83.0Max 48.0Max DESCRIPTION M57115L-01 build in three circuits of insulated type DC-DC converters as a power supply for upper arm side IGBT module drive circuits of an inverter circuit. Since the positive/negative voltage of 17.5V and –6.0V (80mA) is outputted, it is the optimum as a gate power supply for IGBT driver M57175L-01. Recommendation driver : The Mitsubishi IGBT module driver M57175L-01 FEATURES ● +15V Input, (+17.4V, –6.0V) ✕ 3 circuit ● Electrical isolation between input and output (Vios = 2500Vrms for 1minute) 2.54×28=71.12 6.0Max 11.0Max 4.0Max 7.4Max 15.0Max 6.0Max APPLICATION Inverter or AC servo systems BLOCK DIAGRAM 15 Test pin 1 16 Vcc 1 Constant voltage 17 GND 1 18 VEE 1 8 Test pin 2 29 VI+ 9 VCC 2 28 DC–AC converter Constant voltage 27 10 GND 2 26 11 VEE 2 VI– 1 Test pin 3 2 VCC 3 Constant voltage 3 GND 3 4 VEE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR <HYBRID IC> M57115L-01 THE POWER SUPPLY DC-DC CONVERTER FOR IGBT MODULE GATE DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VI Input voltage ILi Output current Topr Tstg Operating temperature Viso1 (Unless otherwise specified, Ta = 25°C) Parameter Storage temperature Isolation voltage ELECTRICAL CHARACTERISTICS Symbol VI Vcci VEEi IL Reg-I Reg-L η Conditions — I = 1(2–4pin), I = 2(9–Bpin), I = 3 (G–Ipin) There is nothing dew condensation. There is nothing dew condensation. Sing-wave voltage, 60Hz, 1min Units V 80 mA –10 ~ 60 –20 ~ 85 °C °C 2500 Vrms (Unless otherwise specified, Vin = 15V, Ta = 25°C) Parameter Input voltage Output voltage1 Output voltage2 Ratings 16 Test conditions Recommended range 2, 9, Gpin voltage IL = 0 ~ 80mA 4, B, Ipin voltage IL = –80mA ~ 0mA Between 2–4, 9–B, G–Ipin IL = 80mA, VI=14.2 ~ 15.8V Min Limits Typ Max 14.2 17.0 –5.0 – 17.4 –6.0 15.8 17.8 –7.0 V V V – – – 80 500 100 mA mV mV 70 – % Output current Input regulation Load regulation IL = 0 ~ 80mA – – – Efficiency IL=80mA – Units Mar. 2002 MITSUBISHI SEMICONDUCTOR <HYBRID IC> M57115L-01 THE POWER SUPPLY DC-DC CONVERTER FOR IGBT MODULE GATE DRIVE APPLICATION EXAMPLE 16 100µF 50V + Driver for IGBT module 17 + 100µF 50V 18 VI + 29 9 28 100µF 50V 100µF 50V + Driver for IGBT module 10 M57115L-01 + 27 26 100µF 50V 11 2 100µF 50V + Driver for IGBT module 3 + 100µF 50V 4 Note) Please select the electrolysis capacitor between each output side terminal (2)-(3), (3)-(4), (9)-(10), and (10)-(11), (16)-(17), and (17)-(18) in consideration of the ripple current of a capacitor etc. with the peak value of gate current. Mar. 2002