Panasonic MA3X748 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X748
Silicon epitaxial planar type
Unit : mm
+ 0.2
For high-frequency rectification
2.8 − 0.3
+ 0.25
0.65 ± 0.15
1.5 − 0.05
1.45
1.9 ± 0.2
+ 0.1
3
+ 0.2
1.1 − 0.1
0.8
+ 0.1
0.16 − 0.06
2
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward
surge current*
IFSM
3
A
Junction temperature
Tj
125
°C
Marking Symbol: M4E
Storage temperature
Tstg
−55 to +125
°C
Internal Connection
Reverse voltage (DC)
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Parameter
1
0.95
+ 0.2
2.9 − 0.05
• Low VF type of MA2Z720
• High rectification efficiency caused by its low forward-risevoltage (VF)
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
0.95
■ Features
0.4 − 0.05
0.65 ± 0.15
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 10 V
30
µA
Forward voltage (DC)
VF1
IF = 500 mA
0.5
V
VF2
IF = 10 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
0.3
pF
V
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X748
Schottky Barrier Diodes (SBD)
IF  V F
0.8
Ta = 125°C
0.7
Ta = 125°C
103
Reverse current IR (µA)
75°C
25°C
− 20°C
10–2
10–3
10–4
Forward voltage VF (V)
10–1
Forward current IF (A)
VF  Ta
IR  V R
104
1
75°C
102
25°C
10
0.6
0.5
IF = 500 mA
0.4
0.3
0.2
1
50 mA
0.1
5 mA
10–5
10−1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
IR  T a
120
160
Ambient temperature Ta (°C)
2
80
120
160
200
IF(surge)  tW
150
100
50
0
80
40
1 000
200
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Reverse current IR (µA)
1
40
0
Ambient temperature Ta (°C)
Ta = 25°C
10
0
30
Ct  VR
102
10−1
−40
25
200
VR = 20 V
10 V
6V
103
20
Reverse voltage VR (V)
Forward voltage VF (V)
104
15
0
–40
0
5
10
15
Reverse voltage VR (V)
20
300
IF(surge)
tW
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
Pulse width tW (ms)
100
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