Renesas HAT2071R Silicon n channel power mos fet power switching Datasheet

HAT2071R
Silicon N Channel Power MOS FET
Power Switching
REJ03G1178-0400
(Previous: ADE-208-1227B)
Rev.4.00
Sep 07, 2005
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 16 mΩ typ (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
1, 2, 3
4
5, 6, 7, 8
4
G
12
34
S S S
1 2 3
Rev.4.00 Sep 07, 2005 page 1 of 6
Source
Gate
Drain
HAT2071R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
10
V
A
80
10
A
A
Gate to source voltage
Drain current
Note 1
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Channel dissipation
Channel to ambient thermal impedance
Pch
Note 2
θ ch-a
2.5
50
W
°C/W
Tch
Tstg
150
–55 to +150
°C
°C
Note 2
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
30
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.0
—
—
16
2.5
20
V
mΩ
VDS = 10 V, ID = 1 mA
Note 3
ID = 5 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
10
25
16
36
—
mΩ
S
ID = 5 A, VGS = 4.5 V
Note 3
ID = 5 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
740
200
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
110
12
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
2.3
2.2
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
13
15
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
40
7
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.85
40
1.10
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Note:
3. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 6
Test Conditions
Note 3
VDD = 10 V
VGS = 10 V
ID = 10 A
VGS = 10 V, ID = 5 A
VDD ≅ 10 V
RL = 2 Ω
Rg = 4.7 Ω
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0
diF/dt = 50 A/µs
Note 3
HAT2071R
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
500
3.0
100
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Drain Current
Channel Dissipation
Pch (W)
4.0
2.0
1.0
10
10
0µ
µs
PW
s
1m
Op = 10 s
era
ms
tio
n(
PW
1 Operation in
N
≤ 1 ote 4
this area is
0s
)
limited by RDS (on)
0.1
10
DC
Ta = 25°C
1 shot Pulse
0
0
50
100
Ambient Temperature
0.01
0.1
200
150
0.3
1
3
10
30
Drain to Source Voltage
Ta (°C)
100
VDS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
20
10 V
5V
4V
Pulse Test
16
ID
3V
VDS = 10 V
Pulse Test
(A)
16
3.5 V
12
12
8
VGS = 2.5 V
4
Drain Current
Drain Current
ID
(A)
20
8
25°C
Tc = 75°C
4
–25°C
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.4
0.3
0.2
ID = 10 A
0.1
5A
2A
0
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 3 of 6
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.5
1
100
50
VGS = 4.5 V
20
10 V
10
5
2
Pulse Test
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2071R
50
Pulse Test
40
10 A
30
VGS = 4.5 V
ID = 2 A, 5 A
20
10
2 A, 5 A, 10 A
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
30
100
10000
Capacitance C (pF)
50
20
1
2
5
10
Ciss
300
Coss
100
Crss
VGS = 0
f = 1 MHz
0
20
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VGS
12
30
VDS
VDD = 25 V
10 V
5V
20
10
8
4
VDD = 25 V
10 V
5V
0
0
4
8
Gate Charge
Rev.4.00 Sep 07, 2005 page 4 of 6
12
16
Qg (nc)
20
200
Switching Time t (ns)
16
40
VGS (V)
Reverse Drain Current IDR (A)
ID = 10 A
0
1000
10
0.5
20
50
3000
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage
Reverse Recovery Time trr (ns)
10
Typical Capacitance vs.
Drain to Source Voltage
100
10
0.1 0.2
VDS (V)
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
1
100
td(off)
50
20
tr
td(on)
10
tf
5
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
2
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
HAT2071R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
10 V
16
5V
12
VGS = 0
8
4
Pulse Test
0
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.02
0.01
0.001
1s
h
p
ot
uls
e
D=
PDM
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Waveform
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 5 of 6
10%
RL
tr
90%
td(off)
tf
HAT2071R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2071R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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