IXYS IXGH30N30 Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXGH30N30
VCES
IC25
VCE(sat)
tfi
=
=
=
=
300 V
60 A
1.6 V
180 ns
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
300
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
300
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
60
A
IC90
TC = 90°C
30
A
ICM
TC = 25°C, 1 ms
120
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 W ICM = 60
Clamped inductive load, L = 100 mH @ 0.8 VCES
PC
TC = 25°C
TJ
200
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Mounting torque (M3)
Weight
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
A
TJM
Md
TO-247 AD
TO-247 AD
300
°C
260
°C
1.13/10
Nm/lb.in.
6
g
Features
· International standard package
JEDEC TO-247 AD
· High current handling capability
· Newest generation HDMOSTM
process
· MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
BVCES
IC
= 250 mA, VGE = 0 V
300
VGE(th)
IC
= 250 mA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
V
5
200
1
±100
·
·
·
·
·
V
mA
mA
nA
1.6
Advantages
· High power density
· Suitable for surface mounting
· Switching speed for high frequency
applications
V
· Easy to mount with 1 screw,
(isolated mounting screw hole)
96542C (7/00)
1-4
IXGH 30N30
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
28
S
2500
pF
210
pF
Cres
60
pF
Qg
145
170
nC
23
35
nC
50
75
nC
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
20
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
td(on)
Inductive load, TJ = 25°C
25
ns
t ri
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 1.0 W
40
ns
170
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
180
ns
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
1.0
mJ
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
25
ns
40
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
0.3
mJ
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 1.0 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
250
420
ns
300
450
ns
1.6
2.4
mJ
RthJC
RthCK
© 2000 IXYS All rights reserved
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
0.62 K/W
0.25
K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXGH 30N30
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 5. Admittance Curves
© 2000 IXYS All rights reserved
Fig. 6. Capacitance Curves)
3-4
IXGH 30N30
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 9. Gate Charge
Fig. 8. Dependence of EON and EOFF on RG.
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-4
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