Zetex BSP33 Pnp silicon planar medium power transistor Datasheet

SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BSP33
ISSUE 4 – MARCH 2001
COMPLEMENTARY TYPE –
BSP43
PARTMARKING DETAIL –
BSP33
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
-90
V
V CEO
-80
Emitter-Base Voltage
V
V EBO
-5
V
Peak Pulse Current
I CM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at T amb =25°C
P TOT
Operating and Storage Temperature Range
T j:T stg
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
-90
MAX.
V
I C=-100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO
-80
V
I C=-10mA
Emitter-Base
Breakdown Voltage
V (BR)EBO
-5
V
I E=-10 µ A
Collector Cut-Off Current I CBO
-100
-50
nA
µA
V CB=-60V
V CB=-60V, T amb=125°C
Collector-Emitter
Saturation Voltage
V CE(sat)
-0.25
-0.5
V
V
I C =-150mA, I B=-15mA
I C =-500mA, I B=-50mA
Base-Emitter
Saturation Voltage
V BE(sat)
-1.0
-1.2
V
V
I C=-150mA, I B=-15mA
I C =-500mA, I B=-50mA
Static Forward Current
Transfer Ratio
h FE
30
100
50
I C =-100 µ A, V CE =-5V
I C =-100mA, V CE =-5V
I C =-500mA, V CE =-5V
300
Output Capacitance
C obo
20
pF
V CB =-10V, f =1MHz
Input Capacitance
C ibo
120
pF
V EB =-0.5V, f =1MHz
Transition Frequency
fT
MHz
I C=-50mA, V CE=-10V
f =35MHz
Turn-On Time
T on
500
ns
Turn-Off Time
T off
650
ns
V CC =-20V, I C =-100mA
I B1 =-I B2 =-5mA
100
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
TBA
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