Mitsubishi CM600HU-24H Igbt modules high power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600HU-24H
● IC ................................................................... 600A
● VCES ....................................................... 1200V
● Insulated Type
● 1-element in a pack
● UL Recognized
Yellow Card No. E80276
File No. E80271
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
110
93 ±0.25
23.6
C
62 ±0.25
80
E
10.7
E
6.5
G
2–M8NUTS
21.5
26.8
29
10.7 9.5
24.5
15.4
13.5
6.5
17.5
14.5 5.5
2–M4NUTS
Dimensions in mm
CM
18
4–φ6.5MOUNTING HOLES
4
+1
34 -0.5
26 +1
-0.5
TC measured point
LABEL
E
C
E
G
CIRCUIT DIAGRAM
Feb. 2009
1
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
(Tj = 25°C, unless otherwise specified)
Item
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Conditions
Collector-emitter voltage
Gate-emitter voltage
Note 1.
2.
3.
4.
5.
6.
(Note 1)
(Note 1)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
Auxiliary terminals M4 screw
Typical value
Ratings
Unit
1200
±20
600
1200
600
1200
3100
–40 ~ +150
–40 ~ +125
2500
9.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
600
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
N·m
g
(Tj = 25°C, unless otherwise specified)
VCE = VCES, VGE = 0V
Min
—
Limits
Typ
—
Max
2
IC = 60mA, VCE = 10V
4.5
6
7.5
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.9
2.85
—
—
—
2250
—
—
—
—
—
—
3.3
—
—
0.015
0.5
3.7
—
90
31.5
18
—
300
700
450
350
3.2
300
—
0.04
0.06
—
µA
Item
Collector cutoff current
Gate-emitter
VGE(th)
threshold voltage
Gate-leakage current
IGES
Collector-emitter
VCE(sat)
saturation voltage
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
QG
Total gate charge
td (on)
Turn-on delay time
tr
Turn-on rise time
td (off)
Turn-off delay time
tf
Turn-off fall time
V EC(Note 2) Emitter-collector voltage
t rr (Note 2) Reverse recovery time
Q rr (Note 2) Reverse recovery charge
Rth(j-c)Q
Thermal resistance (Note 5)
Rth(j-c)R
Rth(c-f)
Contact thermal resistance
ICES
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Test Conditions
±VGE = VGES, VCE = 0V
IC = 600A, VGE = 15V
(Note 4)
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A
VGE = ±15V
RG = 2.1Ω
Resistive load
IE = 600A, VGE = 0V
IE = 600A,
die / dt = –1200A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to heat sink, conductive grease applied (Note 6)
Unit
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
Junction temperature (Tj) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
12
15
800
11
600
10
400
9
200
8
0
0
2
4
6
8
800
600
400
200
Tj = 25°C
Tj = 125°C
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
5
0
200
400
600
800
8
IC = 1200A
6
IC = 600A
4
2
IC = 240A
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
103
7
5
3
2
102
1.0
Tj = 25°C
COLLECTOR CURRENT IC (A)
2
7
5
10
0
1000 1200
3
EMITTER CURRENT IE (A)
VCE = 10V
1000
0
10
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
1200
VGE = 20
(V)
1000 Tj = 25°C
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR CURRENT IC (A)
1200
1.5
2.0
2.5
3.0
7
5
2
101
7
5
Coes
3
2
100
3.5
Cies
3
VGE = 0V
Cres
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
tf
td(off)
3
td(on)
tr
2
102
7
5
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
101
5 7 102
3
2
3
5 7 103
2
2
5
3
3
2
2
trr
102
101
7
5
7
5
3
3
2
2
2
3
5 7 102
100
2
3
5 7 103
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
Per unit base = Rth(j – c) = 0.04K/W
100
5
101 1
10
3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
SWITCHING TIMES (ns)
7
5
REVERSE RECOVERY TIME trr (ns)
103
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
102
–di/dt = 1200A/µs
7
7
Tj = 25°C
lrr
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
REVERSE RECOVERY CURRENT Irr (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single Pulse
5
3 TC = 25°C
2
100
Per unit base = Rth(j – c) = 0.06K/W
7
5
3
2
3
2
10–1
10–1
10–2
10–2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 600A
VCC = 400V
15
VCC = 600V
10
5
0
0
800
1600
2400
3200
GATE CHARGE QG (nC)
Feb. 2009
4
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