Zetex FMMT5401 Sot23 pnp silicon planar high voltage transistor Datasheet

SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996
✪
PARTMARKING DETAILS -
FMMT5400 - 1LZ
FMMT5401 - Z2L
COMPLEMENTARY TYPES -
FMMT5400
FMMT5401
E
C
FMMT5400 – FMMT5550
FMMT5401 – FMMT5551
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
FMMT5400 FMMT5401
-130
-160
UNIT
V
Collector-Emitter Voltage
VCEO
-120
-150
V
Emitter-Base Voltage
VEBO
-5
-5
V
Continuous Collector Current
IC
-600
-600
mA
Power Dissipation at Tamb=25°C
Ptot
330
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5400
FMMT5401
PARAMETER
SYMBOL
MIN.
MAX. MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
-130
-160
V
IC=-100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-120
-150
V
IC=-1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-5
V
IE=-10µ A
Collector Cut-Off
Current
ICBO
Static Forward
Current Transfer
Ratio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.5
-0.2
-0.5
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
-1.0
-1.0
-1.0
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Transition
Frequency
fT
Output Capacitance
Cobo
Small Signal
hfe
Noise Figure
NF
-100
-100
30
40
40
100
-180
400
-50
-50
50
60
50
100
6.0
30
200
MAX.
8
† Periodic Sample Test Only
PAGE NUMBER
nA
µA
nA
µA
300
MHz IC=-10mA, VCE=-10V
f=100MHz
pF
260
8
VCB=-100V
VCB=-100V, TA=100°C
VCB=-120V
VCB=-120V, TA=100°C
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-50mA, VCE=-5V
240
6.0
40
UNIT CONDITIONS.
VCB=-10V, f=1MHz
IC=-1mA, VCE=-10V
f=1KHz
†
dB
IC=-250µ A, VCE=-5V,
RS=1KΩ
f=10Hz to 15.7KHz
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