Panasonic MA2Z377 Silicon epitaxial planar type Datasheet

Variable Capacitance Diodes
MA2Z377
Silicon epitaxial planar type
Unit : mm
INDICATES
CATHODE
0.4 ± 0.15
1.7 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
2.5 ± 0.2
Unit
VR
12
V
Forward current (DC)
IF
20
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
Reverse voltage (DC)
0.16 − 0.06
Rating
0.9 ± 0.1
Symbol
0 to 0.05
Parameter
2
+ 0.1
1
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
0.3 − 0.05
■ Features
0.4 ± 0.15
1.25 ± 0.1
For VCO of a UHF band radio
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 7D
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
IR
Conditions
CD(2V)
VR = 2 V, f = 1 MHz
CD(10V)
VR = 10 V, f = 1 MHz
Capacitance ratio
CD(2V)/CD(10V)
Series
rD
Typ
VR = 12 V
Diode capacitance
resistance*
Min
VR = 1 V, f = 470 MHz
Max
Unit
10
nA
3.40
pF
1.10
1.50
pF
2.20
2.80

0.60
Ω
2.80
0.40
Note) 1.Rated input/output frequency: 470 MHz
2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA2Z377
Variable Capacitance Diodes
CD  VR
f = 1 MHz
Ta = 25°C
Forward current IF (mA)
Diode capacitance CD (pF)
5
3
2
1
0.5
0.3
0
2
4
6
8 10 12 14 16 18 20
IR  Ta
Reverse current IR (nA)
100
10
1
0.1
0
40
80
120
160
Ambient temperature Ta (°C)
2
100
1.02
VR = 1 V
2V
4V
1.01
10 V
80
Ta = 60°C
− 40°C
25°C
60
40
0
200
f = 1 MHz
1.00
0.99
0.98
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
Reverse voltage VR (V)
0.01
1.03
20
0.2
0.1
CD  Ta
IF  V F
120
CD(Ta)
CD(Ta = 25°C)
10
1.2
0.97
0
20
40
60
80
Ambient temperature Ta (°C)
100
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