Diodes DCX122TH Complementary npn/pnp pre-biased small signal sot-563 dual surface mount transistor Datasheet

SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH
Pb
DCX (LO-R1) H
Lead-free
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-563 DUAL SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
·
·
·
Epitaxial Planar Die Construction
SOT-563
A
Built-In Biasing Resistors
Lead Free By Design/RoHS Compliant (Note 3)
CXXYM
Mechanical Data
·
·
Case: SOT-563
·
·
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
D
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
·
B C
Dim
0.50
G
0.90
1.10
1.00
Moisture sensitivity: Level 1 per J-STD-020C
H
1.50
1.70
1.60
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
K
0.56
0.60
0.60
L
0.15
0.25
0.20
M
0.10
0.18
0.11
G
Terminal Connections: See Diagram
H
Weight: 0.005 grams (approx.)
P/N
DCX122LH
DCX142JH
DCX122TH
DCX142TH
M
K
L
All Dimensions in mm
R1 (NOM) R2 (NOM) MARKING
0.22KW
0.47KW
0.22KW
0.47KW
10KW
10KW
OPEN
OPEN
R1 R
2
C81
C82
C83
C84
R1
R2 R1
R1
R1, R2
R1 Only
SCHEMATIC DIAGRAM, TOP VIEW
Maximum Ratings NPN Section
@ TA = 25°C unless otherwise specified
Characteristic
Supply Voltage
Symbol
Value
Unit
VCC
50
V
V
V
Input Voltage
DCX122LH
DCX142JH
VIN
-5 to +6
-5 to +6
Input Voltage
DCX122TH
DCX142TH
VEBO (MAX)
5
IC
100
mA
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Output Current
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
All
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
3. No purposefully added lead.
DS30429 Rev. 2 - 2
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DCX (LO-R1) H
ã Diodes Incorporated
NEW PRODUCT
Maximum Ratings PNP Section
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VCC
-50
V
Supply Voltage
Input Voltage
DCX122LH
DCX142JH
VIN
+5 to -6
+5 to -6
V
Input Voltage
DCX122TH
DCX142TH
VEBO (MAX)
-5
V
IC
-100
mA
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Output Current
All
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
Electrical Characteristics NPN Section
Characteristic
Input Voltage
Min
Typ
Max
Unit
DCX122LH
DCX142JH
Vl(off)
0.3
0.3
¾
¾
V
VCC = 5V, IO = 100mA
DCX122LH
DCX142JH
Vl(on)
¾
¾
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO(on)
¾
¾
0.3V
V
IO/Il = 5mA/0.25mA
¾
¾
28
13
mA
VI = 5V
IO(off)
¾
¾
0.5
mA
VCC = 50V, VI = 0V
Gl
56
56
¾
¾
¾
VO = 5V, IO = 10mA
fT
¾
200
¾
MHz
DCX122LH
DCX142JH
Output Current
DDCX122LH
DDCX142JH
DC Current Gain
R1, R2 Types
Symbol
Output Voltage
Input Current
@ TA = 25°C unless otherwise specified
Gain-Bandwidth Product*
Il
Test Condition
VCE = 10V, IE = 5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section
Characteristic
@ TA = 25°C unless otherwise specified
R1-Only
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
50
¾
¾
V
IC = 50mA
Collector-Emitter Breakdown Voltage
BVCEO
40
¾
¾
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
¾
¾
V
IE = 50mA
IE = 50mA
ICBO
¾
¾
0.5
mA
VCB = 50V
IEBO
¾
¾
¾
0.5
0.5
mA
VEB = 4V
VCE(sat)
¾
¾
0.3
V
IC = 5mA, IB = 0.25mA
hFE
100
100
250
250
600
600
¾
IC = 1mA, VCE = 5V
fT
¾
200
¾
MHz
DCX122TH
DCX142TH
Collector Cutoff Current
Emitter Cutoff Current
DCX122TH
DCX142TH
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
DCX122TH
DCX142TH
Test Condition
VCE = 10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
DS30429 Rev. 2 - 2
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DCX (LO-R1) H
NEW PRODUCT
Electrical Characteristics PNP Section @ TA = 25°C unless otherwise specified
Characteristic
R1, R2 Types
Symbol
Min
Typ
Max
Unit
DCX122LH
DCX142JH
Vl(off)
-0.3
-0.3
¾
¾
V
VCC = -5V, IO = -100mA
DCX122LH
DCX142JH
Vl(on)
¾
¾
-2.0
-2.0
V
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO(on)
¾
¾
-0.3V
V
IO/Il = -5mA/-0.25mA
Il
¾
¾
-28
-13
mA
VI = -5V
IO(off)
¾
¾
-0.5
mA
VCC = -50V, VI = 0V
Gl
56
56
¾
¾
¾
VO = -5V, IO = -10mA
fT
¾
200
¾
MHz
Input Voltage
Output Voltage
DCX122LH
DCX142JH
Input Current
Output Current
DCX122LH
DCX142JH
DC Current Gain
Gain-Bandwidth Product*
Test Condition
VCE = -10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
R1-Only Types
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
-50
¾
¾
V
IC = -50mA
Collector-Emitter Breakdown Voltage
BVCEO
-40
¾
¾
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-5
¾
¾
V
IE = -50mA
IE = -50mA
ICBO
¾
¾
-0.5
mA
VCB = -50V
IEBO
¾
¾
¾
-0.5
-0.5
mA
VEB = -4V
DCX122TH
DCX142TH
Collector Cutoff Current
DCX122TH
DCX142TH
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VCE(sat)
¾
¾
-0.3
V
IC = -5mA, IB = -0.25mA
hFE
100
100
250
250
600
600
¾
IC = -1mA, VCE = -5V
fT
¾
200
¾
MHz
VCE = -10V, IE = 5mA,
f = 100MHz
DCX122TH
DCX142TH
DC Current Transfer Ratio
Test Condition
Gain-Bandwidth Product*
* Transistor - For Reference Only
Ordering Information
(Note 4)
Device
Packaging
Shipping
DCX122LH-7
SOT-563
3000/Tape & Reel
DCX142JH-7
SOT-563
3000/Tape & Reel
DCX122TH-7
SOT-563
3000/Tape & Reel
DCX142TH-7
SOT-563
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
CXXYM
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30429 Rev. 2 - 2
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DCX (LO-R1) H
Pd, POWER DISSIPATION (mW)
NEW PRODUCT
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve - Total
DS30429 Rev. 2 - 2
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DCX (LO-R1) H
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