AD ADN2821XCHIP-02KWP 11.1 gbps 3.3v transimpedance amplifier Datasheet

11.1 Gbps 3.3V
Transimpedance Amplifier
ADN2821
Preliminary Technical Data
FEATURES
PRODUCT DESCRIPTION
Bandwidth: 8 GHz min
Input Noise Current Density: 12pA√Hz
Optical sensitivity: −19 dBm1
Differential Transimpedance /Linear Range:
ADN2821_2: 2.0 kΩ/0.20 mA p-p
ADN2821_5: 5.0 kΩ/0.08 mA p -p
ADN2821_10: 10.0 kΩ/0.04 mA p-p
Power Dissipation: 150 mW
Differential Output Swing: 400 mV p-p min
Input Overload: 3.25 dBm @ 10 dB ER
Low-F cutoff:
ADN2821_10: 25 kHz w/CLF = 0.5 nF
On-Chip PD filter: RF = 200 Ω, CF = 20 pF
RSSI voltage and current ratio: 0.8V/mA
Die Size: 0.65 mm × 1.20 mm
The ADN2821_2/5/10 are a series of compact, high
performance SiGe 3.3V power supply Trans-impedance
Amplifiers (TIAs) optimized for small form factor 10Gbps
Metro-Access and Ethernet PD-TIA modules. The ADN2821
series features low input referred noise current and a range of
trans-impedance gains, suitable for driving a typical CDR or
transceiver directly. 8GHz minimum BW enables up to
11.1Gbps operation; 1.1µA input referred noise current enables
−19dBm sensitivity; 3.25dBm input overload current at a 10dB
extinction ratio. RSSI output signal proportional to average
input current is available for monitoring and alarm generation.
For assembly in small form factor packages, the ADN2821
series integrates a photodiode filter RFCF network on chip and
features 25kHz low frequency cutoff with small 0.5nF external
capacitor The ADN2821 operates with a 3.3V ±0.3V power
supply and is available in die form.
APPLICATIONS
10.7 Gbps Optical Modules
SONET/SDH OC-192/STM-64 and 10 GbE
Receivers, Transceivers, Transponders
1
10-12 BER, 10 dB extinction ratio, 0.85 A/W PD responsivity.
FUNCTIONAL BLOCK DIAGRAM
3.3V
VCC_FILT ER
VCC
200Ω
50Ω
500Ω
FI LT ER
50Ω
OU T
OU T B
IN
20pF
0.85V
10mA
RSSI
GN D
GN D
CL F
Figure 1. ADN2821 Block Diagram.
Rev. PrL
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADN2821
Preliminary Technical Data
TABLE OF CONTENTS
Electrical Specifications ................................................................... 3
Pad Coordinates ............................................................................6
Absolute Maximum Ratings............................................................ 4
Die Information.............................................................................6
ESD Caution.................................................................................. 4
Assembly Recommendations...........................................................7
Pad Descriptions............................................................................... 5
Ordering Guide..................................................................................8
Pad Layout ......................................................................................... 6
REVISION HISTORY
Revision PrL: Preliminary Version
11/04
Revision Pr-A: Add RSSI function Spec.
Rev. PrL| Page 2 of 8
Preliminary Technical Data
ADN2821
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
DYNAMIC PERFORMANCE
Bandwidth (BW)2
Total Input RMS Noise (IRMS)2
Small Signal Trans-impedance (TZ)
Trans-impedance Ripple2
Group Delay Variation2
Low Frequency Cut-Off
Output Return Loss2
Total pk-pk Jitter2
Input Overload Current3, 2
Maximum Output Swing
Linear Output Range
Power Supply Noise Rejection
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
Conditions1
Min
Typ
−3 dB
DC to 10GHz
ADN2821_2, 100 MHz
ADN2821_5, 100 MHz
ADN2821_10, 100 MHz
50 MHz to 5 GHz
50 MHz to 8 GHz
CLF = 1000 pF
DC to 8 GHz, differential
IIN,PK- PK = 2.0 mA, 4 dB ER
Pav, 10-12 BER, 10 dB ER
p-p diff, IIN,PK- PK = 2.5mA
p-p, < 1 dB gain compression
<10MHz
8
9.5
1.1
2000
5000
10000
±1
±10
15
−12
5
3.25
520
400
TBD
IIN,AVE = 0.1 mA, Vcc = 3.3 V ± 5%
single-ended
RF
CF
IIN, AVE = 0 uA to 1 mA
IIN, AVE = 0 uA
1
1500
3500
6000
TBD
400
150
0.85
50
200
20
0.8
TBD
Max
1.3
2500
6500
15000
−10
TBD
650
200
Units
GHz
µA
V/A
V/A
V/A
dB
ps
kHz
dB
ps
dBm
mV
mV
dB
mW
V
Ω
Ω
pF
V/mA
mV
Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, Tambient = +25C
Photodiode capacitance CD = 0.22pF ± 0.04pF, Photodiode resistance = 15Ω, CB = 100pF Bond inductance LIN = LFILTER = 0.3nH ± 0.1nH; LOUT = LOUTB = 0.5nH ± 0.1nH
Load impedance = 50Ω (each output, AC coupled)
3
10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity
2
Rev. PrL | Page 3 of 8
ADN2821
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage (Vcc to Gnd)
Internal Power Dissipation
Output Short Circuit Duration
Maximum Input Current
Storage Temperature Range
Operating Ambient Temperature Range
Maximum Junction Temperature
Die Attach Temperature (<60 seconds)
Rating
5V
Indefinite
10 mA
−65°C to +125°C
−40°C to +95°C
+165°C
+450°C
Stresses above those listed under ‘Absolute Maximum Rating’
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. PrL| Page 4 of 8
Preliminary Technical Data
ADN2821
PAD DESCRIPTIONS
B
FI LT ER
RSSI
Table 3.
Pad No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Pad
GND
IN
TEST
FILTER
FILTER
GND
RSSI
CAP
GND
GND
OUTB
OUT
GND
GND
VCCFILTER
VCC
VCC
Function
Ground (input return)
Current input. Bond directly to PD anode.
Test probe Pad. Leave Floating.
Filter Output.
Filter Output.
Ground
Voltage Output (provides average input current reading)
Low Frequency set point. Connect with .5nF capacitance to GND for <30kHz
Ground
Ground (output return)
Negative Output. Drives 50 ohm termination (AC or DC termination)
Positive Output. Drives 50 ohm termination (AC or DC termination)
Ground (output return)
Ground
Filter Supply. Connect to Vcc to enable on-chip 200 ohm*20pf Filter.
3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor.
3.3 V positive Supply. Recommended bypass to GND is 100 pF RF capacitor.
Rev. PrL | Page 5 of 8
ADN2821
Preliminary Technical Data
PAD LAYOUT
B
FI LT ER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
DIE INFORMATION
PAD
GND
IN
TEST
FILTER
FILTER
GND
RSSI
CAP
GND
GND
OUTB
OUT
GND
GND
VCCFILTER
VCC
VCC
X (um)
−500
−500
−500
−500
−500
−350
−200
−50
130
500
350
350
500
130
−50
−200
−350
Y (um)
260
130
10
−120
−260
−260
−260
−260
−260
−260
−60
60
260
260
260
260
260
Die Size
0.7mm × 1.2mm
(edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm × 0.075 mm
(pads 1-8, 9, 10, 13, 15, 16, 17)
0.144mm × 0.075mm
(pads 9, 11, 12, 14)
Passivation Composition
5000Å Si3N4 (top)
+5000 Å SiO2 (bot)
Pad Composition
Al/1%Cu
Backside Contact
Rev. PrL| Page 6 of 8
Preliminary Technical Data
ADN2821
ASSEMBLY RECOMMENDATIONS
VPD
VCC
560pF
1000pF
200pF
OUTB
OUT
Figure 3. 5-Pin TO-46 w/External Photodiode Supply VPD
•
1× VENDOR SPECIFIC (0.3mm × 0.3mm) 10.0Gbps Photo Diode
•
1× ADN2821 (0.7mm × 1.2mm) Analog Devices SiGe 10.0Gbps Trans-Impedance Amplifier
•
200pF RF Single Layer Capacitor
•
560pF RF Single Layer Capacitor
•
1000pF Ceramic Cap
Notes:
1.
Minimize all GND bond wire lengths.
2.
Minimize IN, FILTER, OUT and OUTB bond wire lengths.
3.
Maintain symmetry in length and orientation between IN and FILTER bond wires.
4.
Maintain symmetry in length and orientation between OUT and OUTB bond wires.
5.
Maintain symmetry between IN/FILTER and OUT/OUTB bond wires.
Rev. PrL | Page 7 of 8
ADN2821
Preliminary Technical Data
ORDERING GUIDE
Model
ADN2821XCHIP-02KWP
ADN2821XCHIP-05KWP
ADN2821XCHIP-10KWP
Temperature
-40oC to 95oC
-40oC to 95oC
-40oC to 95oC
Package Description
NA
NA
NA
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective companies.
Printed in the U.S.A.
PR04369–0–11/04(PrL)
Rev. PrL| Page 8 of 8
Package Option
Tested Die
Tested Die
Tested Die
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