Renesas HAT1093C Silicon p channel mosfet power switching Datasheet

Preliminary Datasheet
HAT1093C
R07DS0605EJ0700
Rev.7.00
Mar 19, 2014
Silicon P Channel MOSFET
Power Switching
Features
• Low on-resistance
RDS(on) = 41 mΩ typ. (at VGS = –4.5 V)
• Low drive current.
• 1.8 V gate drive devices.
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
2 3 4 5
D DD D
4
1
2
3
6
G
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
Ratings
–12
±8
–3
–12
Unit
V
V
A
A
IDR
PchNote 2
Tch
Tstg
–3
900
150
–55 to +150
A
mW
°C
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Page 1 of 6
HAT1093C
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
Min
–12
±8
—
—
–0.3
—
—
—
4
—
—
—
—
—
—
—
—
Turn - off delay time
Fall time
Body - Drain diode forward voltage
td(off)
tf
VDF
—
—
—
Note:
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
Typ
—
—
—
—
—
41
54
79
6.5
940
200
130
11
1.5
3.5
18
23
Max
—
—
±10
–1
–1.2
54
76
119
—
—
—
—
—
—
—
—
—
Unit
V
V
μA
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
50
28
–0.8
—
—
–1.1
ns
ns
V
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±6.4V, VDS = 0
VDS =-12 V, VGS = 0
ID = –1 mA, VDS = –10 V Note3
ID = –1.5 A, VGS = –4.5 V Note3
ID = –1.5 A, VGS = –2.5 V Note3
ID = –1.5 A, VGS = –1.8 V Note3
ID = –1.5 A, VDS = –10 V Note3
VDS = –10 V, VGS = 0,
f = 1 MHz
VDS = –10 V, VGS = –4.5 V,
ID = –3 A
VDS = –10 V, VGS = –4.5 V,
ID = –1.5 A, RL = 6.7 Ω,
Rg = 4.7 Ω
IF = –3 A, VGS = 0
3. Pulse test
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Page 2 of 6
HAT1093C
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
1.2
0.8
10 μs
–10
1
–3
=1
–1
0
m
s
er
–0.3
io
at
n
50
100
150
Ambient Temperature
–0.1
Operation in this area
is limited by RDS(on)
–0.01 –0.03 –0.1 –0.3 –1
200
20
20
–2.2 V
–2.0 V
8
–1.8 V
VGS = –1.6 V
4
0
–2
–4
–6
–8
Drain Current ID (A)
VDS = –10 V
Pulse Test
16
12
–10 –30 –100
Typical Transfer Characteristics
Pulse Test
–10 V
–5 V
–2.4 V
–3
Drain to Source Voltage VDS (V)
Ta (°C)
Typical Output Characteristics
16
25°C
12
Tc = 75°C
–25°C
8
4
0
–10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
m
s
PW
–0.03
0
Drain to Source Voltage VDS(on) (mV)
Ta = 25°C,1shot pulse
100μs When using the FR4 board.
op
0.4
–30
Drain Current ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
DC
Channel Dissipation
Pch (W)
1.6
10000
–200
Pulse Test
–160
ID = –3 A
–120
–80
–1.5 A
–40
–1 A
0
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Pulse Test
1000
–1.8 V
–2.5 V
100
VGS= –4.5 V
10
–1
–10
–100
Drain Current ID (A)
Page 3 of 6
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT1093C
200
Pulse Test
160
–3.0 A
120
–1.8 V
–1.5, –1 A
80
–2.5 V
40
VGS = –4.5 V
0
–25
0
25
50
ID = –3, –1.5, –1 A
75
100 125 150
Case Temperature
Tc
100
Tc = –25°C
10
75°C
1
VDS = –10 V
Pulse Test
0.1
–0.1
Typical Capacitance vs.
Drain to Source Voltage
VDD = –12 V
–10 V
–5 V
–30
–6
4
8
12
16
Ciss
1000
Coss
300
100
Crss
30
10
3
–8
20
1
0
–2
–4
–6
–8
–10
–12
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
1000
20
Pulse Test
16
–5.5 V
12
VGS = 0 V
8
4
0
VGS = 0
f = 1 MHz
3000
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
VGS = –10 V, VDD = –10 V
Rg = 4.7 Ω
Switching Time t (ns)
–40
0
Reverse Drain Current IDR (A)
–4
10000
Capacitance C (pF)
–2
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
0
VDD = –5 V
–10 V
–12 V
ID = –3 A
–100
Drain Current ID (A)
(°C)
0
–20
–10
–1
Dynamic Input Characteristics
–10
25°C
td(off)
100
tr
tf
10
1
0.1
td(on)
1
10
100
Drain Current ID (A)
Page 4 of 6
HAT1093C
Preliminary
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
4.7 Ω
Vin
–4.5 V
Vout
td(on)
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
90%
90%
VDD
= –10 V
10%
10%
tr
td(off)
tf
Page 5 of 6
HAT1093C
Preliminary
Package Dimensions
JEITA Package Code
⎯
Package Name
CMFPAK-6
RENESAS Code
PWSF0006JA-A
Previous Code
CMFPAK-6 / CMFPAK-6V
MASS[Typ.]
0.0065g
D
A
e
c
E
A
HE
A
x M
LP
L
b
S A
e
A2
Reference
Symbol
A
A1
y S
S
e1
b
l1
b1
c
Pattern of terminal position areas
A-A Section
A
A1
A2
b
c
D
E
e
HE
L
LP
x
y
b1
e1
l1
Dimension in Millimeters
Min
0.7
0
0.7
0.15
0.1
1.9
1.6
Nom
0.2
0.15
2.0
1.7
0.65
2.1
0.2
2.05
0.1
0.15
Max
0.8
0.01
0.79
0.3
0.25
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.3
1.9
0.4
Ordering Information
Orderable Part Number
HAT1093C-EL-E
R07DS0605EJ0700 Rev.7.00
Mar 19, 2014
Quantity
3000 pcs
Shipping Container
Taping
Page 6 of 6
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