NXP BLF4G22S-100 Uhf power ldmos transistor Datasheet

BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
Tcase = 25 °C; in a common source class-AB test circuit; IDq = 900 mA; typical values
Mode of operation f
(MHz)
2-carrier
W-CDMA [1]
[1]
f1 = 2135; f2 = 2145
VDS
(V)
PL
(W)
Gp
(dB)
28
25 (AV) 13.5
ηD
(%)
IMD3
(dBc)
ACPR
(dBc)
26
−37
−41
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
900 mA:
◆ Load power = 25 W (AV)
◆ Gain = 13.5 dB (typ)
◆ Efficiency = 26 % (typ)
◆ ACPR = −41 dBc (typ)
◆ IMD3 = −37 dBc (typ)
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness > 10 : 1 VSWR at 100 W CW
■ High efficiency
■ High peak power capability (> 150 W)
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLF4G22-100 (SOT502A)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym039
BLF4G22S-100 (SOT502B)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G22-100
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G22S-100
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+15
V
ID
drain current
-
12
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
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Product data sheet
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Rev. 01 — 10 January 2006
2 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-case)
thermal resistance from
junction to case
Tcase = 80 °C;
PL = 25 W;
2-carrier W-CDMA
-
0.76
0.85
K/W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
Min
Typ
Max
Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
2.5
3.1
3.5
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 900 mA
2.7
3.2
3.7
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
3
µA
IDSX
drain cut-off current
VGS = VGS(th) + 6 V;
VDS = 10 V
27
30
-
A
IGSS
gate leakage current
VGS = 15 V; VDS = 0 V
-
-
300
nA
gfs
transfer conductance
VDS = 10 V; ID = 10 A
-
9.0
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 6 A
-
0.09
-
Ω
Crs
feedback capacitance
-
2.5
-
pF
VGS = 0 V; VDS = 28 V;
f = 1 MHz
7. Application information
Table 7:
Application information
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test
model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 25 W
12.5
13.5
-
dB
IRL
input return loss
PL(AV) = 25 W
9
15
-
dB
ηD
drain efficiency
PL(AV) = 25 W
24
26
-
%
IMD3
third order intermodulation distortion PL(AV) = 25 W
-
−37
−35
dBc
ACPR
adjacent channel power ratio
PL(AV) = 25 W
-
−41
−39
dBc
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch
corresponding to VSWR > 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 900 mA; PL = 100 W (CW).
9397 750 14338
Product data sheet
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Rev. 01 — 10 January 2006
3 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
001aac270
40
ηD
(%)
Gp
(dB)
30
−15
ηD
IMD3
ACPR,
IMD3
(dBc)
−25
ACPR −35
20
Gp
−45
10
0
0
10
20
30
−55
40
50
PL(AV) (W)
(1) 2-carrier W-CDMA performance; VDS = 28 V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz;
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of
average load power; typical values
Table 8:
Typical impedance values
VDS = 28 V; IDq = 900 mA; PL = 25 W (AV); Tcase = 25 °C.
Frequency
(MHz)
ZS
(Ω)
ZL
(Ω)
2110
2.2 + j4.8
1.5 − j2.6
2140
2.2 + j4.6
1.5 − j2.4
2170
2.2 + j4.5
1.4 − j2.2
Table 9:
Code [1]
RF gain grouping
Gain (dB) [2]
Min
Max
A
12.5
13.0
B
13.0
13.5
C
13.5
14.0
D
14.0
14.5
E
14.5
-
[1]
0.2 dB overlap is allowed for measurement reproducibility.
[2]
For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz.
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
4 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
001aac271
16
001aac272
−20
IMD3
(dBc)
Gp
(dB)
(1)
(2)
(3)
−30
(4)
(5)
14
(1)
−40
(4)
(5)
−50
12
(2)
−60
10
1
102
10
103
(3)
−70
1
102
10
PL(PEP) (W)
103
PL(PEP) (W)
(1) IDq = 600 mA
(1) IDq = 600 mA
(2) IDq = 750 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
(5) IDq = 1200 mA
Two-tone measurement;
Two-tone measurement;
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
Fig 2. Power gain as a function of peak envelope load
power; typical values
001aac273
16
Fig 3. Third order intermodulation distortion as a
function of peak envelope power; typical values
001aac274
1011
t50%
(hr)
Gp
(dB)
1010
14
109
P1dB = 135 W (= 52.1 dBm)
108
P3dB = 161 W (= 51.3 dBm)
107
12
10
0
40
80
120
160
200
PL (W)
106
100
140
180
220
260
Tj (°C)
ton = 8 µs
toff = 1 ms
Fig 4. Pulsed peak power capability; typical values
Fig 5. t50% failures due to electromigration as a
function of junction temperature
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
5 of 14
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C12
VG
C13
VD
R1
Philips Semiconductors
8. Test information
9397 750 14338
Product data sheet
C1
C11
C2
C14
C4
Rev. 01 — 10 January 2006
C3
L7
C15
C8 C9 C10
C6
L6
DUT
C7
L1
L10
L2 L3
C16
L11
L13
L12
L4
L5
L8
001aac275
See Table 10 for list of components
Fig 6. Test circuit for operation at 2.14 GHz
UHF power LDMOS transistor
6 of 14
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
L9
BLF4G22-100; BLF4G22S-100
L14
C5
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xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
Philips Semiconductors
9397 750 14338
Product data sheet
50 mm
C13
C1
VG
R1
C12
C11
C2
Rev. 01 — 10 January 2006
C3
C4
C14
C15
L7
L14
C8 C9 C10
C6
L6
C16
C7
L1
L2 L3
L10
L11
L4
L5
L12
L13
L8
L9
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
The other side is unetched and serves as a ground plane.
See Table 10 for list of components.
Fig 7. Component layout for 2.14 GHz test circuit
UHF power LDMOS transistor
7 of 14
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
001aac276
BLF4G22-100; BLF4G22S-100
C5
75 mm
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
Table 10:
List of components (see Figure 6 and Figure 7 )
Component
Description
Value
C1, C2, C11
tantalum capacitor
10 µF; 35 V
C3
multilayer ceramic chip capacitor
C4, C10
multilayer ceramic chip capacitor
C5, C8, C14,
C15
multilayer ceramic chip capacitor
C6
multilayer ceramic chip capacitor
[2]
0.6 pF
C7
multilayer ceramic chip capacitor
[1]
4.7 pF
C9
multilayer ceramic chip capacitor
220 nF; 50 V
C12
electrolytic capacitor
220 µF; 63 V
C13
tantalum capacitor
C16
multilayer ceramic chip capacitor
[3]
7.5 pF
L1
stripline
[4]
Z0 = 50 Ω
(W × L) 32.3 mm × 1.7 mm
stripline
[4]
Z0 = 50 Ω
(W × L) 2.2 mm × 1.7 mm
L3
stripline
[4]
Z0 = 24 Ω
(W × L) 2.3 mm × 4.8 mm
L4
stripline
[4]
Z0 = 15 Ω
(W × L) 2.4 mm × 8 mm
stripline
[4]
Z0 = 9.5 Ω
(W × L) 9.3 mm × 14 mm
stripline
[4]
Z0 = 60 Ω
(W × L) 4 mm × 1.2 mm
L7
stripline
[4]
Z0 = 60 Ω
(W × L) 14.5 mm × 1.2 mm
L8
stripline
[4]
Z0 = 8.2 Ω
(W × L) 9.3 mm × 16.8 mm
stripline
[4]
Z0 = 5.5 Ω
(W × L) 3 mm × 25.8 mm
stripline
[4]
Z0 = 50 Ω
(W × L) 11 mm × 1.7 mm
L11
stripline
[4]
Z0 = 50 Ω
(W × L) 9.5 mm × 1.7 mm
L12
stripline
[4]
Z0 = 34 Ω
(W × L) 3 mm × 3 mm
stripline
[4]
Z0 = 50 Ω
(W × L) 12.7 mm × 1.7 mm
L14
stripline
[4]
Z0 = 43 Ω
(W × L) 13.5 mm × 2.1 mm
R1
SMD resistor
L2
L5
L6
L9
L10
L13
4.7 µF; 25 V
[1]
8.2 pF
1.5 µF; 50 V
4.7 µF; 50 V
4.7 Ω; 0.1 W
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
American Technical Ceramics type 100A or capacitor of same quality.
[3]
American Technical Ceramics type 180R or capacitor of same quality.
[4]
Striplines are on a double copper-clad Taconic RF35 PCB (εr = 3.5); thickness = 0.76 mm.
9397 750 14338
Product data sheet
Dimensions
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
8 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 8. Package outline SOT502A
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
9 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502B
Fig 9. Package outline SOT502B
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
10 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 11:
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CW
Continuous Wave
CCDF
Complementary Cumulative Distribution Function
DPCH
Dedicated Physical Channels
IDq
quiescent drain current
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average Ratio
PEP
Peak Envelope Power
RF
Radio Frequency
TM1
Test Model 1
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
11 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
11. Revision history
Table 12:
Revision history
Document ID
Release date
BLF4G22-100_4G22 20060110
S-100_1
Data sheet status
Change notice
Doc. number
Supersedes
Product data sheet
-
9397 750 14338
-
9397 750 14338
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
12 of 14
BLF4G22-100; BLF4G22S-100
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14338
Product data sheet
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Rev. 01 — 10 January 2006
13 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
17. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 January 2006
Document number: 9397 750 14338
Published in The Netherlands
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