Infineon BDP947 Silicon npn transistor Datasheet

BDP947, BDP949
Silicon NPN Transistor
For AF driver and output stages
4
High collector current
High current gain
Low collector-emitter saturation voltage
3
Complementary types: BDP948, BDP950 (PNP)
2
1
Type
Marking
Pin Configuration
BDP947
BDP 947
1=B
2=C
3=E
4=C
SOT223
BDP949
BDP 949
1=B
2=C
3=E
4=C
SOT223
VPS05163
Package
Maximum Ratings
Parameter
Symbol
BDP 947
BDP 949
Collector-emitter voltage
Unit
VCEO
45
60
Collector-base voltage
VCBO
45
60
Emitter-base voltage
VEBO
5
5
DC collector current
IC
3
Peak collector current
ICM
5
Base current
IB
200
Peak base current
IBM
500
Total power dissipation, TS = 99 °C
Ptot
3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
17
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Aug-06-2001
BDP947, BDP949
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO
BDP947
45
-
-
BDP949
60
-
-
BDP947
45
-
-
BDP949
60
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
IEBO
-
-
100
nA
Collector-base breakdown voltage
IC = 100 µA, IB = 0
V
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 45 V, IE = 0
Collector cutoff current
VCB = 45 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
hFE
-
IC = 10 mA, VCE = 5 V
25
-
-
IC = 500 mA, VCE = 1 V
85
-
475
IC = 2 A, VCE = 2 V
50
-
-
VCEsat
-
-
0.5
VBEsat
-
-
1.3
fT
-
100
-
MHz
Ccb
-
25
-
pF
Collector-emitter saturation voltage1)
V
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t ≤=300µs, D = 2%
2
Aug-06-2001
BDP947, BDP949
Total power dissipation Ptot = f (TS )
Permissible Pulse Load RthJS = f (tp)
10 3
3.2
K/W
W
10 2
RthJS
P tot
2.4
2
10 1
1.6
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
1.2
0.8
10 -1
0.4
0
0
20
40
60
80
120 °C
100
10 -2 -6
10
150
10
-5
10
-4
10
-3
10
-2
s
TS
0
tp
Permissible Pulse Load
DC current gain hFE = f (IC)
Ptotmax / PtotDC = f (tp)
VCE = 2V
10 3
10 3
-
-
100°C
25°C
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
hFE
Ptotmax / PtotDC
10
10 1
10 0 -6
10
-55°C
10 2
10 1
10
-5
10
-4
10
-3
10
-2
s
10
10 0 0
10
0
tp
10
1
10
2
10
3
mA 10 4
IC
3
Aug-06-2001
BDP947, BDP949
Collector cutoff current ICBO = f (TA )
Collector-emitter saturation voltage
VCB = 45V
IC = f (VCEsat ), hFE = 10
10 4
10 5
nA
mA
10 4
10 3
IC
ICBO
10 3
100°C
25°C
-50°C
max
10 2
10 2
10 1
typ
10 1
10 0
10 -1
0
20
40
60
80
100
120 °C
10 0
0.0
150
0.1
0.2
0.3
V
0.4
TA
VCEsat
Base-emitter saturation voltage
Collector current I C = f (VBE)
IC = f (VBEsat ), hFE = 10
VCE = 2V
10 4
10 4
mA
mA
10 3
10 3
-50°C
25°C
100°C
IC
IC
-50°C
25°C
100°C
10 2
10 2
10 1
10 1
10 0
0.0
0.6
0.2
0.4
0.6
0.8
1.0
V
10 0
0.0
1.3
VBEsat
0.2
0.4
0.6
0.8
1.0
V
1.3
VBE
4
Aug-06-2001
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