Rohm FMY5 General purpose (dual transistors) Datasheet

FMY5
Transistor
General purpose(dual transistors)
FMY5
zExternal dimensions (Unit : mm)
(4)
2.9
1.1
1.9
0.95
0.95
(1)
(2)
(4)
(3)
0.8
(5)
(5)
0.3
0.15
0.3Min.
zCircuit diagram
(3)
SMT5
1.6
2.8
zFeatures
1) Both the 2SA1514K and 2SC3906K chips in an SMT
package.
2) PNP and NPN chips are connecter in a common
emitter.
Each lead has same dimensions
Tr2
(2)
Tr1
(1)
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
120
120
5
50
V
V
V
mA
Power dissipation
Junction temperature
PC
Tj
300(TOTAL)
150
Storage temperature
Tstg
−55 to +150
mW
°C
°C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
∗
∗
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
zPackage, marking, and packaging specifications
Part No.
Package
FMY5
SMT5
Marking
Y5
Code
Basic ordering unit (pieces)
T148
3000
Rev.B
1/4
FMY5
Transistor
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
120
−
−
V
Collector-emitter breakdown voltage
BVCEO
120
−
−
V
IC = 1/−1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50/−50µA
Collector cutoff current
ICBO
−
−
0.5
µA
VCB = 100/−100V
Emitter cutoff curren
IEBO
−
−
0.5
µA
VEB = 4/−4V
hFE
180
−
820
−
VCE(sat)
−
0.5
V
fT
−
−
140
−
MHz
Cob
−
3/4
−
pF
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Conditions
IC = 50/−50µA
VCE = 6/−6V, IC = 2/−2mA
IC = 10/−10mA, IB = 1/−1mA
∗
VCE = 12/−12V, IE = −2/2mA, f = 100MHz
VCB = 12/−12V, IE = 0A, f = 1MHz
Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. ∗Transition frequency of the device.
z Electrical characteristics curves
Tr1
−50
−8
−20.0
−17.5
−6
−15.0
−12.5
−4
−10.0
−7.5
−5.0
−2
−2.5µA
IB=0
−4
0
−8
−12
−16
−20
−10
−5
−2
−1
−0.5
0
IC/IB=50/1
−0.1
20/1
10/1
−0.05
−0.2
−0.5
−1
−2
−5
−10
−20
−50
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter saturation voltage
vs. collector current
−0.2 −0.4
−0.6
−0.8
−1.0
−1.2 −1.4
100
−0.2
−1.6
Fig.2 Ground emitter propagation
characteristics
TRANSITION FREQUENCY : fT (MHZ)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−0.2
200
Ta=25°C
VCE= −6V
500
200
100
50
0.5
1
2
5
10
20
EMITTER CURRENT : IE (mA)
Fig.5 Transition frequency
vs. emitter current
50
−0.5
−1
−2
−5
−10
−20
−50
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=25°C
−0.5
−5V
VCE= −1V
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
500
−0.2
−0.1
−20
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
−22.5
Ta=25°C
Ta=25°C
VCE= −6V
−25.0
Fig.3 DC current gain vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
V
−3
COLLECTOR CURRENT : IC (mA)
−10
20
Ta=25°C
f=1MHZ
IE=0A
10
Cob
5
2
1
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Rev.B
2/4
FMY5
Transistor
EMITTER INPUT CAPACITANCE : Cib (pF)
20
Ta=25°C
f=1MHZ
IC=0A
Cib
10
5
2
1
−0.5
−1
−2
−5
−10
−20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Tr2
50
8
20.0
17.5
6
15.0
12.5
10.0
4
7.5
5.0
2
2.5
IB=0µA
4
0
8
Ta=25°C
16
20
12
20
10
5
2
1
0.5
0.2
IC/IB=50
0.1
0.05
20
10
0.02
1
2
5
10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.11 Collector-emitter saturation voltage
vs. collector current ( )
3V
200
VCE=1V
100
50
0.1
0
0.2 0.4
0.2
0.6 0.8 1.0 1.2 1.4 1.6
0.5
Ta=100°C
0.1
25°C
−40°C
0.05
0.02
1
2
5
10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.12 Collector-emitter saturation voltage
vs. collector current ( )
5
10
20
50
VCE=6V
Ta=25°C
IC/IB=10
0.2
2
Fig.10 DC current gain vs. collector current
Fig.9 Ground emitter propagation characteristics
0.5
1
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Ta=25°C
0.5
5V
500
0.2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Ground emitter output characteristics
Ta=25°C
Ta=25°C
VCE=6V
TRANSITION FREQUENCY : fT (MHz)
22.5
DC CURRENT GAIN : hFE
25.0
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10
500
200
100
50
−0.5
−1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : IE (mA)
Fig.13 Transition frequency vs. emitter current
Rev.B
3/4
FMY5
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
−0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.14 Collector output capacitance
vs. collector-base voltage
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
Transistor
Ta=25°C
f=1MHz
IC=0A
20
10
5
2
1
−0.5
1
2
5
10
20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.15 Emitter input capacitance
vs. emitter-base voltage
Rev.B
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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