Comset BUX39 High current, high speed, high power transistor Datasheet

NPN BUX39
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX39 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
VBE = -1.5V
tp = 10ms
@ TC = 25°
Value
Unit
90
120
7
120
30
40
6
120
200
-65 to +200
V
V
V
V
A
A
A
Watts
°C
°C
Value
Unit
1.46
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VEB0
ICEO
Collector-Emitter
Sustaining Voltage (1)
Emitter-Base Voltage
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCEO(SUS)
IC=200 mA
IC=0A , IE=50 mA
VCE=70 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
VEB=5.0 V, IC=0
COMSET SEMICONDUCTORS
Min Typ Mx Unit
90
-
-
V
7
-
-
1
1
5
1
V
mA
1/2
mA
mA
NPN BUX39
hFE
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
VCE(SAT)
VBE(SAT)
Symbol
IC=12 A , VCE=4.0 V
IC=20 A , VCE=4.0 V
IC=12 A , IB=1.2 A
IC=20 A , IB=2.5 A
IC=20 A , IB=2.5 A
Ratings
Test Condition(s)Sec
15
8
-
0.7
1.25
45
1.2
1.6
-
2.1
2.5
fT
4
1
8
-
-
ton
Turn-on time
-
0.8
1.2
ts
Storage time
-
0.55
1
tf
File time
-
.15
0.25
IC=8 A , IB=1 A , VCC=150 V
IC=8 A , VCC=150 V
IB1 = -IB2 =1 A
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
V
Min Typ Mx Unit
Second breakdown collector VCE=30 V , ts = 1s
current
VCE=135 V , ts = 1s
VCE=15 V , IC=1 A , f=4 MHz
Transition frequency
IS/B
-
3/2
A
MHz
µs
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