Renesas BCR10CS Mitsubishi semiconductor ⟨triac⟩ Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CS
OUTLINE DRAWING
4
Dimensions
in mm
∗
1.3
VOLTAGE
CLASS
+0.3
0 –0
(1.5)
3.0 –0.5
+0.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
4.5
1.5 MAX
10.5 MAX
1
5
0.5
1 2 3
24
• IT (RMS) ...................................................................... 10A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
1
1
2
3 3
4
2.6±0.4
4.5
0.8
∗ Measurement
point of case
temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TO-220S
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Symbol
Parameter
Conditions
Ratings
Unit
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Tc=103°C✽3
ITSM
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
5
W
PG (AV)
Average gate power dissipation
0.5
W
VGM
Peak gate voltage
10
V
IGM
Peak gate current
2
Tj
Junction temperature
Tstg
10
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
41.6
A2s
Storage temperature
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
1.2
g
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
!
VFGT !
VRGT !
Gate trigger voltage ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
1.5
V
IFGT !
!
—
—
20
mA
—
—
20
mA
—
—
20
mA
IRGT !
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.2
—
—
V
Rth (j-c)
Thermal resistance
Junction to case ✽3 ✽4
—
—
1.8
°C/ W
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
Tj=125°C
10
—
—
V/µs
✽5
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
MAIN CURRENT
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
TIME
(di/dt)c
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
100
7
5
3
2
101
7
5
3
2
Tj = 125°C
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
3
2
VGM = 10V
101
PGM = 5W
PG(AV) =
7
5
0.5W
3 VGT = 1.5V
2
IGM = 2A
100
7
5
3
2
IRGT I IFGT I, IRGT III
VGD = 0.2V
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
103
7
5
4
3
2
TYPICAL EXAMPLE
IRGT I, IRGT III
102
7
5
4
3
2
IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
103
7
5
4
3
2
102 2 3 5 7 103 2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
32
160
28
140
CASE TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
24 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0
2
4
6
8
10
12
14
RMS ON-STATE CURRENT (A)
16
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
100
80
60
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40
20
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
60 60 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
0
2
4
6
8
10
12
14
AMBIENT TEMPERATURE (°C)
80
60
40
20
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
104
7
5
3
2
103
7
5
3
2
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
102
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
JUNCTION TEMPERATURE (°C)
103
7
5
3
2
DISTRIBUTION T2+, G–
TYPICAL
EXAMPLE
102
7
5
3
2
100
–40
80
RMS ON-STATE CURRENT (A)
105
7 TYPICAL EXAMPLE
5
3
2
101
7
5
3
2
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
0
16
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
LACHING CURRENT (mA)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
AND ALUMINUM
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
100 (%)
AMBIENT TEMPERATURE (°C)
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
T2 , G  TYPICAL

T2– , G–  EXAMPLE
+
+
0
40
80
120
JUNCTION TEMPERATURE (°C)
160
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
140
120
100
III QUADRANT
80
60
40
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
100 (%)
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
COMMUTATION CHARACTERISTICS
7
5
3
2
SUPPLY
VOLTAGE
MAIN
VOLTAGE
(dv/dt)c
101
7
5
(di/dt)c
TIME
TIME
VD
MINIMUM
CHARACTERISTICS
VALUE
3
2
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
TIME
MAIN CURRENT
I QUADRANT
III QUADRANT
100
7
100
2 3
5 7 101
2 3
5 7 102
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
103
7
5
4
3
2
6Ω
TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III
A
6V
102
7
5
4
3
2
A
6V
RG
V
TEST PROCEDURE 1
V
RG
TEST PROCEDURE 2
6Ω
A
6V
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
V
RG
TEST PROCEDURE 3
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
The product guaranteed maximum junction
temperature 150°C (See warning.)
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CS
OUTLINE DRAWING
4
Dimensions
in mm
∗
1.3
VOLTAGE
CLASS
+0.3
0 –0
(1.5)
3.0 –0.5
+0.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
4.5
1.5 MAX
10.5 MAX
1
5
0.5
1 2 3
24
• IT (RMS) ...................................................................... 10A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
1
1
2
3 3
4
2.6±0.4
4.5
0.8
∗ Measurement
point of case
temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TO-220S
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Symbol
Parameter
Conditions
Ratings
Unit
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Tc=128°C✽3
ITSM
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
5
W
PG (AV)
Average gate power dissipation
0.5
W
VGM
Peak gate voltage
10
V
IGM
Peak gate current
2
Tj
Junction temperature
Tstg
10
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
100
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
41.6
A2s
Storage temperature
—
Weight
Typical value
A
–40 ~ +150
°C
–40 ~ +150
°C
1.2
g
✽1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=150°C, VDRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
!
VFGT !
VRGT !
Gate trigger voltage ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
1.5
V
IFGT !
!
—
—
20
mA
—
—
20
mA
—
—
20
mA
0.2/0.1
—
—
V
—
—
1.8
°C/ W
10/1
—
—
V/µs
IRGT !
Gate trigger current ✽2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C/150°C, VD=1/2VDRM
Rth (j-c)
Thermal resistance
Junction to case ✽3 ✽4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
✽5
Tj=125°C/150°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Test conditions
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C/150°C
MAIN CURRENT
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
TIME
(di/dt)c
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
MAXIMUM ON-STATE CHARACTERISTICS
102
SURGE ON-STATE CURRENT (A)
100
ON-STATE CURRENT (A)
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ON-STATE VOLTAGE (V)
4.0
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
GATE VOLTAGE (V)
5
3
2 VGM = 10V
PGM = 5W
101
7
5
3
2
PG(AV) =
0.5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
IRGT I
IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
TYPICAL EXAMPLE
7
5
3
IRGT I, IRGT III
2
102
IFGT I
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
TRANSIENT THERMAL IMPEDANCE (°C/W)
103
7
5
4
3
2
102 2 3 5 7 103 2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
32
160
28
140
CASE TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
24 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0
2
4
6
8
10
12
14
RMS ON-STATE CURRENT (A)
16
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
100
80
60
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40
20
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
20
0
100 (%)
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
5
3
2
DISTRIBUTION
102
7
5
3
2
+
100 (%)
JUNCTION TEMPERATURE (°C)
–
T2 , G
TYPICAL
EXAMPLE
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
LACHING CURRENT (mA)
40
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
7
5
3
2
–40
60
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
100
80
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
101
7
5
3
2
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS, CURVES APPLY
140
REGARDLESS OF
CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE
100
LOADS
RMS ON-STATE CURRENT (A)
106
7
5
3
2
AMBIENT TEMPERATURE (°C)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
AND ALUMINUM, CURVES
140
APPLY REGARDLESS OF
CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
2
4
6
8 10 12 14 16
0
100 (%)
AMBIENT TEMPERATURE (°C)
The product guaranteed maximum junction
temperature 150°C (See warning.)
T2 , G  TYPICAL

T2– , G–  EXAMPLE
+
+
0
40
80
120
JUNCTION TEMPERATURE (°C)
160
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
TYPICAL EXAMPLE
Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
100 (%)
160
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
Tj = 150°C
140
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
120
100
III QUADRANT
80
60
40 I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
3
2
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
TIME
(di/dt)c
TIME
TIME
VD
101
7 MINIMUM
CHARAC5
TERISTICS
3 VALUE
I QUADRANT
2
III QUADRANT
100
7 0
10
2 3
5 7 101
2 3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
100 (%)
The product guaranteed maximum junction
temperature 150°C (See warning.)
7
5
3
2
101
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
3
2 MINIMUM
CHARACTERISTICS
100
VALUE
7 0
10
2 3
5 7 101
2 3
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
5
4
3
2
TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
6Ω
LOAD
A
6V
RG
V
TEST PROCEDURE 1
C1
A
6V
V
RG
TEST PROCEDURE 2
R1
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0
R0
C0 = 0.1µF
R0 = 100Ω
6Ω
A
6V
V
RG
TEST PROCEDURE 3
Mar. 2002
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