TEMIC BF996S N-channel dual gate mos-fieldeffect tetrode, depletion mode Datasheet

BF996S
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuner.
Features
D High cross modulation performance
D Low input capacitance
D High AGC-range
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
2
3
1
4
94 9279
BF996S Marking: MH
Plastic case (SOT 143)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/gate 2-source peak current
Total power dissipation
Tamb ≤ 60°C
Channel temperature
Storage temperature range
Symbol
VDS
ID
±IG1/G2SM
Ptot
TCh
Tstg
Value
20
30
10
200
150
–65 to +150
Unit
V
mA
mA
mW
°C
°C
Symbol
Value
Unit
RthChA
450
K/W
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (5)
BF996S
Electrical DC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Drain-source breakdown voltage
ID = 10 mA, –VG1S = –VG2S = 4 V
Gate 1-source breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
Gate 2-source breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
Gate 1-source leakage current
±VG1S = 5 V, VG2S = VDS = 0
Gate 2-source leakage current
±VG2S = 5 V, VG1S = VDS = 0
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
Type
BF 996 S
BF 996 SA
BF 996 SB
Gate 1-source cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA
Gate 2-source cut-off voltage
VDS = 15 V, VG1S = 0, ID = 20 mA
Symbol
Min.
V(BR)DS
20
±V(BR)G1SS
8
14
V
±V(BR)G2SS
8
14
V
±IG1SS
50
nA
±IG2SS
50
nA
18
10.5
18
mA
mA
mA
–VG1S(OFF)
2.5
V
–VG2S(OFF)
2.0
V
Max.
2.6
Unit
mS
pF
35
1.2
pF
fF
pF
IDSS
IDSS
IDSS
Typ.
Max.
Unit
V
4
4
9.5
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz, Tamb = 25°C
Parameters / Test Conditions
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Feedback capacitance
Output capacitance
Power gain
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
gS = 2 mS, gL = 0.5 mS, f = 200 MHz
gS = 3.3 mS, gL = 1 mS, f = 800 MHz
AGC range
VDS = 15 V, VG2S = 4 to –2 V,
f = 800 MHz
Noise figure
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
gS = 2 mS, f = 200 MHz
gS = 3.3 mS, f = 800 MHz
2 (5)
Type
Symbol
y21s
Cissg1
Min.
15
Typ.
18.5
2.2
Cissg2
Crss
Coss
1.1
25
10.8
Gps
Gps
25
18
∆Gps
F
F
40
dB
dB
dB
1.0
1.8
dB
dB
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
BF996S
Common Source S-Parameters
VDS = 15 V, VG2S = 4 V, ID = 5 mA, Z0 = 50 W
S11
VDS/V
ID/mA
5
15
10
15
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
LIN
MAG
0.99
0.98
0.95
0.92
0.89
0.86
0.83
0.80
0.78
0.75
0.72
0.70
0.68
0.99
0.98
0.95
0.92
0.88
0.85
0.82
0.79
0.76
0.73
0.71
0.68
0.66
0.99
0.98
0.94
0.91
0.87
0.84
0.81
0.78
0.75
0.72
0.69
0.67
0.65
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
S21
ANG
deg
–8.5
–17.7
–24.6
–32.1
–39.2
–45.8
–52.3
–58.7
–64.7
–70.7
–76.6
–82.5
–88.6
–9.0
–18.7
–26.0
–33.7
–41.2
–48.3
–55.1
–61.6
–67.9
–74.2
–80.2
–86.4
–92.3
–9.4
–19.4
–27.1
–35.0
–42.9
–50.3
–57.2
–63.9
–70.4
–76.8
–82.9
–89.0
–95.1
LIN
MAG
1.45
1.52
1.33
1.26
1.18
1.11
1.05
0.99
0.93
0.88
0.84
0.80
0.76
1.82
1.90
1.67
1.58
1.48
1.39
1.32
1.24
1.17
1.11
1.06
1.01
0.97
2.01
2.10
1.84
1.74
1.63
1.53
1.45
1.37
1.29
1.22
1.17
1.12
1.07
S12
ANG
deg
164.9
150.9
134.7
121.3
108.4
96.5
85.0
74.1
63.6
53.1
43.7
33.6
24.1
165.3
151.8
136.3
123.3
110.9
99.5
88.7
78.1
67.9
57.9
48.7
38.9
29.6
165.4
152.0
136.7
123.8
111.5
100.3
89.6
79.4
69.2
59.4
50.2
40.8
31.5
LIN
MAG
0.001
0.003
0.004
0.004
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.006
0.002
0.003
0.004
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.006
0.002
0.003
0.004
0.005
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.006
S22
ANG
deg
82.2
75.6
67.7
62.8
57.8
57.3
58.9
63.3
73.1
83.5
102.1
120.4
131.7
81.9
75.0
67.2
61.8
56.3
55.8
56.7
60.7
69.9
80.0
98.9
118.2
130.5
81.4
74.6
66.4
60.8
55.1
54.4
54.9
58.5
67.3
76.7
95.2
115.3
128.7
LIN
MAG
0.99
0.98
0.97
0.95
0.93
0.92
0.90
0.88
0.86
0.85
0.83
0.82
0.80
0.99
0.98
0.96
0.95
0.93
0.91
0.90
0.88
0.86
0.84
0.83
0.81
0.80
0.98
0.97
0.96
0.94
0.92
0.91
0.89
0.87
0.86
0.84
0.83
0.81
0.79
ANG
deg
–3.4
–7.1
–9.7
–12.3
–15.1
–17.4
–19.7
–22.0
–24.3
–26.2
–28.4
–30.5
–32.7
–3.5
–7.2
–9.8
–12.6
–15.3
–17.8
–20.0
–22.4
–24.6
–26.6
–28.8
–31.0
–33.3
–3.6
–7.3
–10.0
–12.9
–15.7
–18.0
–20.4
–22.7
–25.0
–27.1
–29.4
–31.6
–33.9
3 (5)
BF996S
Dimensions in mm
96 12240
4 (5)
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
BF996S
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
5 (5)
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