Seme LAB IRFY240 N-channel power mosfet for hi-rel application Datasheet

IRFY240
MECHANICAL DATA
Dimensions in mm (inches)
4.70
5.00
0.70
0.90
3.56
Dia.
3.81
VDSS
ID(cont)
RDS(on)
10.41
10.92
13.39
13.64
10.41
10.67
16.38
16.89
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
12.70
19.05
1 2 3
200V
12A
Ω
0.19Ω
FEATURES
0.89
1.14
2.54
BSC
2.65
2.75
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
12A
ID
Continuous Drain Current @ Tcase = 100°C
7.8A
IDM
Pulsed Drain Current
48A
PD
Power Dissipation @ Tcase = 25°C
60W
Linear Derating Factor
0.48W/°C
TJ , Tstg
Operating and Storage Temperature Range
–55 to 150°C
RθJC
Thermal Resistance Junction to Case
2.1°C/W max.
RθJA
Thermal Resistance Junction to Ambient
80°C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
IRFY240
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
RDS(on)
VGS = 0
ID = 1mA
Min.
Typ.
Max.
200
Reference to 25°C
V
0.29
V / °C
Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
VGS = 10V
ID = 7.8A
0.19
Resistance
VGS = 10V
ID = 12A
0.22
VDS = VGS
ID = 250µA
2
VDS ≥ 15V
IDS = 7.8A
6.1
VGS = 0
VDS = 0.8BVDSS
25
TJ = 125°C
250
VGS(th) Gate Threshold Voltage
4
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
-100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
1300
Coss
Output Capacitance
VDS = 25V
400
Crss
Reverse Transfer Capacitance
f = 1MHz
130
Qg
Total Gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
12
ISM
Pulse Source Current
49
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IS = 12A
Qrr
Reverse Recovery Charge
di / dt ≤ 100A/µs VDD ≤ 50V
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance
LS
Internal Source Inductance
Semelab plc.
ID = 12A
nA
nC
60
ID = 12A
2.2
10.6
VDS = 0.5BVDSS
14.2
37.6
nC
20
VDD = 100V
152
ID = 12A
58
RG = 9.1Ω
IS = 12A
µA
pF
32
VDS = 0.5BVDSS
Ω
V
(Ω)
S(Ω
gfs
VGS = 10V
Unit
ns
67
TJ = 25°C
VGS = 0
TJ = 25°C
(from 6mm down drain lead pad to centre of die)
8.7
(from 6mm down source lead to centre of source bond pad)
8.7
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
A
1.5
V
500
ns
5.3
µC
nH
Prelim. 9/95
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