MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER DESCRIPTION M63993FP is high voltage Power MOSFET and IGBT module driver for 3Phase bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................. ±300mA ¡3PHASE BRIDGE DRIVER ¡SSOP-36 APPLICATIONS MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 M63993FP UFS UPO UFB NC NC NC NC NC VFS VPO VFB NC NC NC NC WFS WPO WFB 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 GND COUT CIN2 CIN1 NC VDD UPIN UNIN VPIN VNIN WPIN WNIN GND PGND WNO VNO UNO VCC NC:NO CONNECTION PACKAGE TYPE 36P2R BLOCK DIAGRAM UFB INTER LOCK VDD SQ R SQ R UPO INPUT RESISTOR is 50kΩ UPIN ONE SHOT PULSE – + 10µs UFS VDD/VCC LEVEL SHIFT UNIN VCC UNO PGND same as U Phase VFB VPO VFS VNO same as U Phase WFB WPO WFS WNO VPIN VNIN WPIN WNIN THRESHOLD:0.1 ✽VDD (V) – 1.5µs + COUT CIN1 THRESHOLD:0.5 ✽VDD (V) + 7.5µs – CIN2 GND Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol U, V, WFB U, V, WFS VU, V, WPO VCC VU, V, WNO VDD VIN dVS/dt Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Voltage Conditions High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Ratings –0.5~624 VB–24 ~ VB+0.5 Unit VS–0.5 ~ VB+0.5 –0.5 ~ 24 V V –0.5 ~ VCC+0.5 –0.5 ~ 7 V Low Side Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation U, V, WPI N, U, V, WNI N Linear Derating Factor Junction Case Thermal Resistance Junction Temperature Ta > 25°C, On Board Ta = 25°C, On Board Operation Temperature Storage Temperature V V –0.5 ~ VDD+0.5 V V ±50 1.2 V/ns W 12.0 30 mW/°C °C/W –30 ~ 125 –30 ~ 100 °C °C –40 ~ 125 °C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Test Conditions Min. VS+10 Limits Typ. — Max. VS+20 Unit V U, V, WFB High Side Floating Supply Voltage U, V, WFS High Side Floating Supply Offset Voltage –5 — 500 V VCC VDD Low Side Fixed Supply Voltage Logic Supply Voltage 10 4.5 — — 20 5.5 V V VIN VPGND Logic Input Voltage Output GND Voltage 0 –5 — — VDD 5 V V U, V, WPI N, U, V, WNI N FUNCTION TABLE 1 (INPUT, OUTPUT and UV) U, V, WPIN H H L L X H U, V, WNIN H L H UV H H H U, V, WPO L L H U, V, WNO L H L L H X L L L L L ✽PO = OFF, ✽NO = OFF, ✽PIN = ✽NIN = L simultaneously ✽PO OFF, ✽VB UV tripped L L L H ✽NO ON, ✽VB UV tripped Behavioral state Normal OFF ✽NO ON ✽PO ON Note : “L” state of ✽VB UV mean that UV trip voltage. FUNCTION TABLE 2 (COMPARATOR) CIN1 L H X CIN2 H COUT H X L L L Behavioral state COUT is normal HIGH Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS=15V, VDD=5V unless otherwise specified) Symbol Parameter Test conditions Min. — Limits Typ. — Max. 1 — 0.48 — — — — 0.5 0.1 — mA V V Unit µA mA IFS IBS Floating Supply Leakage Current VBS standby Current ICC VCC standby Current IDD VDD standby Current VOH VOL High Level Output Voltage Low Level Output Voltage IO=0A, ✽NO, ✽PO IO=0A, ✽NO, ✽PO 14.9 — — — — 0.1 VIH High Level Input Threshold Voltage ✽PIN, ✽NIN Low Level Input Threshold Voltage ✽PIN, ✽NIN 2.1 0.6 3.0 1.5 4.0 1.9 V VIL IIH IIL High Level Input Bias Current Low Level Input Bias Current ✽PIN, ✽NIN=5V ✽PIN, ✽NIN=0V — — 1.0 µA µA VUVT VBS Supply UV Trip Voltage VUVR VBS Supply UV Reset Voltage tUV IOH VBS Supply UV Filter Time Output High Level Short Circuit Pulsed Current IOL Output Low Level Short Circuit Pulsed Current tdLH(HO) High Side Turn-On Propagation Delay CL=1000pF between HO – VS tdHL(HO) tr(HO) High Side Turn-Off Propagation Delay High Side Turn-On Rise Time tf(HO) tdLH(LO) VB=VS=600V per 1 phase mA V — 100 300 7.0 7.5 8.0 8.5 9.0 9.5 V — 7.5 — ✽PO✽NO=0V, ✽PIN, ✽NIN=5V,PW<10µs — –300 — µs mA ✽PO✽NO=15V, ✽PIN, ✽NIN=0V,PW<10µs — 250 300 300 — 350 mA CL=1000pF between HO – VS CL=1000pF between HO – VS 230 280 330 — 130 — ns ns High Side Turn-Off Fall Time CL=1000pF between HO – VS CL=1000pF between LO – GND — 250 100 300 — 350 ns Low Side Turn-On Propagation Delay tdHL(LO) tr(LO) Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time CL=1000pF between LO – GND CL=1000pF between LO – GND 230 280 330 — 130 — ns ns tf(LO) Low Side Turn-Off Fall Time CL=1000pF between LO – GND Comparator 1 Threshold Voltage VDD=5V — 0.47 100 0.5 — 0.53 ns VCIN1th tVCIN1 VCIN2th Comparator 1 Filter Time Comparator 2 Threshold Voltage — 1.5 — VDD=5V 2.4 2.5 2.6 µs V tVCIN2 Comparator 2 Filter Time Comparator H Level Output Voltage ICO=500µA 7.5 — — — µs VCOH — 4.5 VCOL Comparator L Level Output Voltage ICO=–500µA — — 0.5 V V ns ns V V Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER LEAD DEFINITIONS Lead symbol Description UFS, VFS, WFS High Side floating supply (minus side) UPO, VPO, WPO UFB, VFB, WFB VCC High side gate drive output High Side floating supply (plus side) Low side supply Low side gate drive output UNO, VNO, WNO PGND UNIN, VNIN, WNIN UPIN, VPIN, WPIN VDD CIN1 CIN2 COUT Low side power ground Logic input for low side gate driver output (LO) Logic input for high side gate driver output (HO) Logic supply Input for comparator 1 Input for comparator 2 Comparator output TIMING DIAGRAM 1. Input/Output Timing Diagram ✽PIN ✽NIN ✽PO ✽NO 2. VBS Supply Undervoltage Lockout Timing Diagram ✽1 VBS VBSUVR VBSUVT tVBSUV ✽PO ✽PIN ✽1: VBS=✽FB-✽FS Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER PERFORMANCE CURVES IFS vs. Temperature IBS vs. Temperature 1.0 10 9 0.9 7 0.8 6 0.7 IBS (mA) IFS (µA) 8 5 4 3 2 0.6 0.5 0.4 1 0.3 0 –1 –20 0 25 50 75 100 0.2 –20 125 0 3.5 0.9 3.0 0.8 VIH 2.0 VIL 0.3 50 75 100 0.2 –20 125 0 Temperature (°C) 25 50 75 125 100 125 Temperature (°C) VBSUVT, VBSUVR vs. Temperature IIL vs. Temperature 300 9.5 250 9.0 VBSUVR 200 8.5 IIL (µA) VBSUVT, VBSUVR (V) 100 0.5 0.5 25 125 0.6 0.4 0 100 0.7 1.0 0.0 –20 75 IDD vs. Temperature 1.0 IDD (mA) VIL, VIH (V) VIL, VIH vs. Temperature 4.0 1.5 50 Temperature (°C) Temperature (°C) 2.5 25 VBSUVT 8.0 150 100 7.5 7.0 –20 50 0 25 50 75 Temperature (°C) 100 125 0 –20 0 25 50 75 Temperature (°C) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER IOH, IOL vs. Temperature 450 400 400 350 250 IOH 200 150 300 200 150 100 50 50 0 25 50 75 100 0 13 125 IOH 250 100 0 –20 IOL 350 IOL 300 IOH, IOL (mA) IOH, IOL (mA) IOH, IOL vs. Voltage 450 14 15 35 35 30 30 25 25 20 15 5 5 75 100 0 13 125 14 15 50 50 40 40 30 20 10 10 50 75 Temperature (°C) 18 19 20 19 20 30 20 25 17 ROH vs. Voltage 60 ROH (Ω) ROH (Ω) ROH vs. Temperature 60 0 16 ✽FB, VCC (V) Temperature (°C) 0 –20 20 15 10 50 19 20 10 25 18 ROL vs. Voltage 40 ROL (Ω) ROL (Ω) ROL vs. Temperature 40 0 17 ✽FB, VCC (V) Temperature (°C) 0 –20 16 100 125 0 13 14 15 16 17 18 ✽FB, VCC (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER tdLH vs. Voltage 450 400 400 tdLH (HO) 350 tdLH (ns) tdLH, tdHL (ns) tdLH, tdHL vs. Temperature 450 tdLH (LO) 300 tdHL (HO) tdHL (LO) 250 tdLH (LO) 300 tdHL (HO) 250 200 –20 10000 tdLH (HO) 350 0 25 50 75 100 200 13 125 15 16 17 18 19 20 Temperature (°C) ✽FB, VCC (V) Power Loss (3Phase operation mode) vs. Frequency Power Loss (3Phase operation mode) vs. Frequency (HV=0V) 10000 ✽FB=VCC=15V, VDD=5V, CL=1000pF ✽FB=VCC=15V VDD=5V VS=400V 1000 100 VS=300V Power Loss (mW) Power Loss (mW) 14 tdHL (LO) VS=200V VS=100V 10 1 10 CL=10000pF CL=1000pF 1000 CL=0pF 100 10 100 Frequency (kHz) 1000 1 10 100 1000 Frequency (kHz) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER VCIN1th vs. Voltage 0.60 0.55 0.55 VCIN1th (V) VCIN1th (V) VCIN1th vs. Temperature 0.60 0.50 0.45 0.45 0.40 –20 0.50 0 25 50 75 100 0.40 4.5 125 VCIN1th vs. Voltage 3.0 2.8 2.8 VCIN1th (V) VCIN2th (V) VCIN2th vs. Temperature 3.0 2.6 2.4 2.2 2.6 2.4 2.2 0 25 50 75 100 2.0 4.5 125 Temperature (°C) 2.0 2.0 1.0 25 50 75 Temperature (°C) 5.5 tVCIN1 vs. Voltage 3.0 tVCIN1 (µS) tVCIN1 (µS) tVCIN1 vs. Temperature 0 5 VDD (V) 3.0 0.0 –20 5.5 VDD (V) Temperature (°C) 2.0 –20 5 100 125 1.0 0.0 4.5 5 5.5 VDD (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER tVCIN2 vs. Voltage 15.0 10.0 10.0 tVCIN2 (µS) tVCIN2 (µS) tVCIN2 vs. Temperature 15.0 5.0 0.0 –20 0 25 50 75 100 5.0 0.0 4.5 125 VCOH vs. Voltage 6.0 5.5 5.5 VCOH (V) VCOH (V) VCOH vs. Temperature 6.0 5.0 4.5 5.0 4.5 0 25 50 75 100 4.0 4.5 125 Temperature (°C) 0.16 0.16 0.14 0.14 0.12 0.12 0.10 0.08 0.10 0.08 0.06 0.06 0.04 0.04 0.02 0.02 25 50 75 Temperature (°C) 5.5 VCOL vs. Voltage 0.18 VCOL (V) VCOL (V) VCOL vs. Temperature 0 5 VDD (V) 0.18 0.00 –20 5.5 VDD (V) Temperature (°C) 4.0 –20 5 100 125 0.00 4.5 5 5.5 VDD (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63993FP HIGH VOLTAGE 3PHASE BRIDGE DRIVER Power Dissipation Pt (W) Thermal Derating Factor Characteristics 2.0 1.5 1.2 1.0 0.5 0 0 25 50 75 100 125 Ambient Temperature Ta (°C) PACKAGE OUTLINE 36P2R-D Plastic 36pin 450mil SSOP EIAJ Package Code SSOP36-P-450-0.80 JEDEC Code – Weight(g) 0.53 Lead Material Cu Alloy e b2 19 E F Recommended Mount Pad Symbol 18 1 A y b L e A1 A2 D L1 HE e1 I2 36 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters Min Nom Max – – 2.35 0 0.1 0.2 – 2.05 – 0.3 0.35 0.45 0.2 0.25 0.18 15.0 15.2 14.8 8.4 8.6 8.2 0.8 – – 11.93 11.63 12.23 0.5 0.3 0.7 – 1.765 – – – 0.1 0° – 8° – 0.5 – – 11.43 – 1.27 – – Sep. 2000