ON BD438 Plastic medium power silicon pnp transistor Datasheet

BD436, BD438, BD440,
BD442
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary
types are BD437 and BD441.
http://onsemi.com
4.0 AMP POWER
TRANSISTORS PNP SILICON
Features
• Pb−Free Packages are Available*
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TO−225AA
CASE 77
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD436
BD438
BD440
BD442
VCEO
32
45
60
80
Vdc
Collector−Base Voltage
BD436
BD438
BD440
BD442
VCBO
32
45
60
80
Vdc
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
36
288
W
W/°C
TJ, Tstg
– 55 to + 150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
3.5
°C/W
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
3 2
1
MARKING DIAGRAM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
YWW
BD4xxG
BD4xx
Y
WW
G
THERMAL CHARACTERISTICS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 14
1
= Device Code
xx = 36, 36T, 38, 40, 42
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD436
TO−225AA
500 Units/Box
BD436G
TO−225AA
(Pb−Free)
500 Units/Box
BD436T
TO−225AA
50 Units/Rail
BD436TG
TO−225AA
(Pb−Free)
50 Units/Rail
BD438
TO−225AA
500 Units/Box
BD438G
TO−225AA
(Pb−Free)
500 Units/Box
BD440
TO−225AA
500 Units/Box
BD440G
TO−225AA
(Pb−Free)
500 Units/Box
BD442
TO−225AA
500 Units/Box
BD442G
TO−225AA
(Pb−Free)
500 Units/Box
Publication Order Number:
BD438/D
BD436, BD438, BD440, BD442
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
Characteristic
BD436
BD438
BD440
BD442
V(BR)CEO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD436
BD438
BD440
BD442
V(BR)CBO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.1
IEBO
−
−
1.0
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 32 V, IE = 0)
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
ICBO
BD436
BD438
BD440
BD442
Emitter Cutoff Current
(VEB = 5.0 V)
mAdc
mAdc
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD436
BD438
BD440
BD442
hFE
40
30
20
15
−
−
−
−
−
−
−
−
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD436
BD438
BD440
BD442
hFE
85
85
40
40
−
−
−
−
475
475
475
475
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD436
BD438
BD440
BD442
hFE
50
40
25
15
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.7
0.8
0.8
VBE(ON)
−
−
−
−
1.1
1.5
Vdc
fT
3.0
−
−
MHz
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 A)
(IC = 3.0 A, IB = 0.3 A)
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
VCE(sat)
BD436
BD438
BD440
BD442
BD436/BD438
BD440/BD442
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
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2
Vdc
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
BD436, BD438, BD440, BD442
2.0
1.6
IC = 10 mA
100 mA
1.0 A
3.0 A
1.2
0.8
TJ =
255C
0.4
0
0.05 0.070.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50 70 100
200
300
500
hFE, CURRENT GAIN (NORMALIZED)
Figure 1. Collector Saturation Region
200
100
80
60
40
20
0
10
2
3
100
1
5
IC, COLLECTOR CURRENT (AMP)
Figure 2. Current Gain
IC, COLLECTOR CURRENT (AMP)
2.0
TJ = 25°C
VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.030.05
0.1 0.2 0.3 0.5
10
TJ = 150°C
dc
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
1.0
0.5
CURVES APPLY BELOW RATED VCEO
BD438
0.1
1.0 2.0 3.0 4.0
5 ms
4.0
BD440
BD442
1.0
2.0
5.0
10
20
50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
Figure 4. Active Region Safe Operating Area
Figure 3. “On” Voltage
http://onsemi.com
3
BD436, BD438, BD440, BD442
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BD438/D
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