AUTOMOTIVE GRADE AUIRF2907Z HEXFET® Power MOSFET Features Advanced Planar Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number Package Type AUIRF2907Z TO-220 75V RDS(on) max. 4.5m ID (Silicon Limited) 170A ID (Package Limited) 75A S D G TO-220AB AUIRF2907Z G Gate D Drain Standard Pack Form Tube S Source Orderable Part Number Quantity 50 AUIRF2907Z Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 120 75 IDM PD @TC = 25°C Pulsed Drain Current Maximum Power Dissipation 600 300 VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Units A W 2.0 ± 20 270 690 See Fig.15,16, 12a, 12b W/°C V mJ A mJ -55 to + 175 °C 300 10 lbf•in (1.1N•m) Typ. Max. Units ––– 0.50 ––– 0.50 ––– 62 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-21 AUIRF2907Z Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 75 ––– ––– V VGS = 0V, ID = 250µA ––– 0.069 ––– V/°C Reference to 25°C, ID = 1mA ––– 3.5 4.5 m VGS = 10V, ID = 75A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 180 ––– ––– S VDS = 10V, ID = 75A ––– ––– 20 VDS = 75V, VGS = 0V µA ––– ––– 250 VDS =75V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 180 46 65 19 140 97 100 270 ––– LD Internal Drain Inductance ––– 5.0 ––– LS Internal Source Inductance ––– 13 ––– ––– ––– ––– ––– ––– ––– 7500 970 510 3640 650 1020 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 75 ––– ––– 680 ––– ––– ––– ––– 41 59 1.3 61 89 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Forward Turn-On Time ton ––– ––– ––– ––– ID = 75A nC VDS = 60V VGS = 10V VDD = 38V ID = 75A ns RG= 2.5 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 pF VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 60V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 75A ,VGS = 0V ns TJ = 25°C ,IF = 75A ,VDD = 38V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax, starting TJ = 25°C, L = 0.095mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L = 0.095mH, RG = 25, IAS = 75A, VGS =10V. R is measured at TJ of approximately 90°C. TO-220 device will have an Rth of 0.45°C/W. 2 2017-09-21 AUIRF2907Z 1000 10000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 10 4.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 1 10 10 0.1 100 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1000 200 Gfs, Forward Transconductance (S) ID , Drain-to-Source Current ) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175°C 100 10 T J = 25°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 10 T J = 25°C 150 T J = 175°C 100 50 V DS = 10V 380µs PULSE WIDTH 0 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance Vs. Drain Current 2017-09-21 AUIRF2907Z 100000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 90A C, Capacitance(pF) Coss = Cds + Cgd 10000 C iss Coss Crss 1000 VDS = 60V VDS = 38V 10.0 VDS = 15V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 0 50 VDS , Drain-to-Source Voltage (V) 200 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 150 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage T J = 175°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 1msec 100 Limited by package 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V DC 0.1 1 0.0 0.5 1.0 1.5 2.0 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 100 2.5 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-09-21 AUIRF2907Z 180 160 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package 120 100 80 60 40 20 0 VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 TC , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) ID, Drain Current (A) 140 ID = 90A 0.1 0.20 0.10 0.05 0.01 0.02 0.01 J R1 R1 J 1 R2 R2 C 1 2 2 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) C Ri (°C/W) i (sec) 0.279 0.000457 0.221 0.003019 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-09-21 AUIRF2907Z 15V L VDS D.U.T RG IAS 20V DRIVER + V - DD A Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID TOP 9.0A 13A BOTTOM 75A 1000 0.01 tp EAS , Single Pulse Avalanche Energy (mJ) 1200 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 ID = 250µA 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2017-09-21 AUIRF2907Z 100 Avalanche Current (A) 0.01 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 0.05 10 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 300 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 11) 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2017-09-21 AUIRF2907Z Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2017-09-21 AUIRF2907Z TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF2907Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code TO-220AB package is not recommended for Surface Mount Application. 9 2017-09-21 AUIRF2907Z Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant TO-220AB N/A Class M4 (+/- 425V)† AEC-Q101-002 Class H2 (+/- 4000V)† AEC-Q101-001 Class C4 (+/- 1000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 9/21/2017 Comments Updated datasheet with corporate template. Corrected typo error on package outline and part marking on page 9. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-09-21