SeCoS MMBT591 Pnp plastic encapsulated transistor Datasheet

MMBT591
-1A , -80V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Low equivalent on-resistance
A
L
3
3
MARKING
C B
Top View
1
591
1
2
K
E
2
D
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
F
H
G
Collector
REF.

A
B
C
D
E
F

Base
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15

Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Pulse Current
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
ICM
PC
TJ, TSTG
-80
-60
-5
-1
-2
250
150, -55~150
V
V
V
A
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage1
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain 1
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-80
-60
-5
100
100
80
15
150
-
-
-0.1
-0.1
300
-0.3
-0.6
-1.2
-1
10
V
V
V
µA
µA
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -60V, IE=0
VEB= -4V, IC=0
VCE= -5V, IC= -1mA
VCE= -5V, IC= -500mA
VCE= -5V, IC= -1A
VCE= -5V, IC= -2A
IC= -500mA, IB = -50mA
IC= -1A, IB = -100mA
IC= -1A, IB = -100mA
VCE= -5V, IC= -1A
VCE= -10V,IC= -50mA, f=100MHz
VCB= -10V, f=1MHz
hFE
Collector-Emitter Saturation Voltage 1
VCE(sat)
Base-Emitter Saturation Voltage 1
Base-emitter voltage
Transition frequency
Collector Output Capacitance
VBE(sat)
VBE
fT
Cob
V
V
V
MHz
pF
NOTE:
1. Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
http://www.SeCoSGmbH.com/
22-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
MMBT591
Elektronische Bauelemente
-1A , -80V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
22-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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