Diotec BC556A Si-epitaxial planartransistor Datasheet

BC 556 ... BC 559
PNP
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 556
BC 557
BC 558/559
Collector-Emitter-voltage
B open
- VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (DC)
- IC
100 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 55…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Group A
Group B
Group C
110...220
200...460
420...800
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 2 mA
hFE
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangsimpedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausg.-Leitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
–
–
300 mV
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 100 mA, - IB = 5 mA
1
-VCEsat
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
8
01.11.2003
General Purpose Transistors
BC 556 ... BC 559
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
1V
- VBE
580 mV
660 mV
700 mV
Base saturation voltage – Basis-Sättigungsspannung
- IC = 100 mA, - IB = 5 mA
- VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 5 V, - IC = 2 mA
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 60 V
BC 556
- ICE0
–
–
0.1 :A
- VCE = 40 V
BC 557
- ICE0
–
–
0.1 :A
- VCE = 25 V
BC 558
- ICE0
–
–
0.1 :A
- VCE = 25 V
BC 559
- ICE0
–
–
0.1 :A
150 MHz
–
–
CCB0
–
–
6 pF
CEB0
–
9 pF
–
F
–
2 dB
10 dB
F
–
1 dB
4 dB
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
BC 556...
RG = 2 kS f = 1 kHz,
BC 558
)f = 200 Hz
BC 559
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
200 K/W 1)
RthA
BC 546 ... BC 549
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
9
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