Freescale MP3H6115AC6U High temperature accuracy integrated silicon pressure sensor Datasheet

Pressure
Freescale Semiconductor
MP3H6115A
Rev 4, 10/2009
High Temperature Accuracy
Integrated Silicon Pressure Sensor
for Measuring Absolute Pressure,
On-Chip Signal Conditioned,
Temperature Compensated and
Calibrated
Freescale's MP3H6115A series sensor integrates on-chip, bipolar op amp
circuitry and thin film resistor networks to provide a high output signal and
temperature compensation. The small form factor and high reliability of onchip integration make the Freescale pressure sensor a logical and
economical choice for the system designer.
The MP3H6115A series piezoresistive transducer is a state-of-the-art,
monolithic, signal conditioned, silicon pressure sensor. This sensor combines
advanced micromachining techniques, thin film metallization, and bipolar
semiconductor processing to provide an accurate, high level analog output
signal that is proportional to applied pressure.
MP3H6115A
Series
15 to 115 kPa (2.2 to 16.7 psi)
0.12 to 2.8 V Output
Application Examples
• Aviation Altimeters
• Industrial Controls
• Engine Control/Manifold Absolute
Pressure (MAP)
• Weather Station and Weather
Reporting Device Barometers
Features
•
•
•
•
•
•
Improved Accuracy at High Temperature
Available in Super Small Outline Package
1.5% Maximum Error over 0° to 85°C
Ideally suited for Microprocessor or Microcontroller-Based Systems
Temperature Compensated from -40° to +125°C
Durable Thermoplastic (PPS) Surface Mount Package
ORDERING INFORMATION
Packaging
Device Name
Case No.
Options
None
Super Small Outline Package (MP3H6115A Series)
MP3H6115A6U
•
Rail
1317
MP3H6115A6T1
Tape & Reel
1317
•
MP3H6115AC6U
Rail
1317A
MP3H6115AC6T1 Tape & Reel
1317A
# of Ports
Single
Dual
Gauge
Pressure Type
Differential
•
•
SUPER SMALL OUTLINE PACKAGES
MP3H6115A6U/T1
CASE 1317-04
© Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
MP3H6115AC6U/T1
CASE 1317A-04
Absolute
Device
Marking
•
•
•
•
MP3H6115A
MP3H6115A
MP3H6115A
MP3H6115A
Pressure
Operating Characteristics
Table 1. Operating Characteristics
(VS = 3.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2.)
Characteristic
Symbol
Min
Typ
Max
Unit
Pressure Range
POP
15
—
115
kPa
Supply Voltage(1)
VS
2.7
3.0
3.3
Vdc
Io
—
4.0
8.0
mAdc
(0 to 85°C)
Voff
0.079
0.12
0.161
Vdc
Full Scale Output(3)
@ VS = 3.0 Volts
(0 to 85°C)
VFSO
2.780
2.82
2.861
Vdc
Full Scale Span(4)
@ VS = 3.0 Volts
(0 to 85°C)
VFSS
2.660
2.70
2.741
Vdc
Accuracy
(0 to 85°C)
Supply Current
Minimum Pressure Offset
@ VS = 3.0 Volts
(2)
—
—
—
±1.5
%VFSS
V/P
—
27
—
mV/kPa
Response Time(5)
tR
—
1.0
—
ms
(6)
—
—
20
—
ms
—
—
±0.25
—
%VFSS
Sensitivity
Warm-Up Time
Offset
Stability(7)
1. Device is ratiometric within this specified excitation range.
2. Offset (Voff) is defined as the output voltage at the minimum rated pressure.
3. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure.
4. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.
6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure has been stabilized.
7. Offset Stability is the product's output deviation when subjected to 1000 cycles of Pulsed Pressure, Temperature Cycling with Bias Test.
MP3H6115A
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Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Parametrics
Symbol
Value
Units
Maximum Pressure (P1 > P2)
Pmax
400
kPa
Storage Temperature
Tstg
-40° to +125°
°C
Operating Temperature
TA
-40° to +125°
°C
I o+
0.5
mAdc
Io -
-0.5
mAdc
(2)
Output Source Current @ Full Scale Output
Output Sink Current @ Minimum Pressure Offset
(2)
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
2. Maximum Output Current is controlled by effective impedance from Vout to Gnd or Vout to VS in the application circuit.
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
VS
2
Thin Film
Temperature
Compensation
and
Gain Stage #1
Sensing
Element
3
GND
Gain Stage #2
and Ground
Reference
Shift
Circuitry
4
VOUT
Pins 1, 5, 6, 7, and 8 are No Connects
Figure 1. Fully Integrated Pressure Sensor Schematic
MP3H6115A
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Pressure
On-chip Temperature Compensation and Calibration
Figure 2 illustrates the absolute sensing chip in the basic
Super Small Outline chip carrier (Case 1317).
Figure 3 shows a typical application circuit (output source
current operation).
Figure 4 shows the sensor output signal relative to
pressure input. Typical minimum and maximum output
curves are shown for operation over 0 to 85°C temperature
range. The output will saturate outside of the rated pressure
range.
A fluorosilicone gel isolates the die surface and wire bonds
from the environment, while allowing the pressure signal to
be transmitted to the silicon diaphragm. The MP3H6115A
series pressure sensor operating characteristics, internal
reliability and qualification tests are based on use of dry air as
the pressure media. Media other than dry air may have
adverse effects on sensor performance and long-term
reliability. Contact the factory for information regarding media
compatibility in your application.
Fluoro Silicone
Gel Die Coat
P1
Stainless Steel
Cap
Die
Thermoplastic
Case
Wire Bond
Lead frame
Die Bond
Absolute Element
Sealed Vacuum Reference
Figure 2. Cross Sectional Diagram SSOP (not to scale)
+3 V
VS Pin 2
MP3H6115A
VOUT Pin 4
100 nF
to ADC
47 pF
GND Pin 3
51 K
GND
Output (Volts)
Figure 3. Typical Application Circuit
(Output Source Current Operation)
3.0
2.75 Transfer Function:
2.5 VOUT = VS x (.009xP–.095) ± Error
V = 3.0 VDC
2.25 S
Temp = 0 to 85°C
2.0
Max
Typ
1.75
1.5
1.25
1.0
0.75
0.5
Min
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
0.25
0
Pressure (Reference to Sealed Vacuum) in kPa
Figure 4. Output versus Absolute Pressure
MP3H6115A
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Pressure
Transfer Function (MP3H6115A)
Normal Transfer Value: VOUT = VS x (0.009 x P – 0.095)
± (Pressure Error x Temp. Factor x 0.009 x VS)
VS = 3.0 ± 0.3 VDC
Temperature Error Band
MP3H6115A Series
4.0
Break Points
3.0
Temperature
Error
Factor
2.0
Temp
Multiplier
-40
0 to 85
125
3
1
1.75
1.0
0.0
-40
-20
0
20
40
60
80
100
120
140
Temperature in C°
NOTE: The Temperature Multiplier is a linear response from 0°C to -40°C and from 85°C to 125°C
Pressure Error Band
Error Limits for Pressure
3.0
Pressure Error (kPa)
2.0
1.0
0.0
20
40
60
80
100
120
Pressure (in kPa)
-1.0
-2.0
- 3.0
Pressure
Error (Max)
15 to 115 (kPa)
±1.5 (kPa)
MP3H6115A
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Pressure
MINIMUM RECOMMENDED FOOTPRINT FOR SMALL AND SUPER SMALL PACKAGES
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor package must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self-align when subjected to a
0.050
1.27
TYP
solder reflow process. It is always recommended to fabricate
boards with a solder mask layer to avoid bridging and/or
shorting between solder pads, especially on tight tolerances
and/or tight layouts.
0.387
9.83
0.150
3.81
0.027 TYP 8X
0.69
0.053 TYP 8X
1.35
inch
mm
Figure 5. SSOP Footprint (Case 1317 and 1317A)
MP3H6115A
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Pressure
PACKAGE DIMENSIONS
PAGE 1 OF 3
CASE 1317-04
ISSUE F
SUPER SMALL OUTLINE PACKAGE
MP3H6115A
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Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 3
CASE 1317-04
ISSUE F
SUPER SMALL OUTLINE PACKAGE
MP3H6115A
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Pressure
PACKAGE DIMENSIONS
PAGE 3 OF 3
CASE 1317-04
ISSUE F
SUPER SMALL OUTLINE PACKAGE
MP3H6115A
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Pressure
PACKAGE DIMENSIONS
PAGE 1 OF 2
CASE 1317A-04
ISSUE D
SUPER SMALL OUTLINE PACKAGE
MP3H6115A
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Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 2
CASE 1317A-04
ISSUE D
SUPER SMALL OUTLINE PACKAGE
MP3H6115A
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Freescale Semiconductor
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MP3H6115A
Rev.4
10/2009
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