KODENSHI OPD1616N Silicon pin photo diode Datasheet

Silicon PIN Photo Diode
OPD1616N
High Speed Sensitivity
High Speed Sensitivity
unit : ㎛
1. Structure
1.1 Chip Size : 1.60mm X 1.60mm
1.2 Chip Thickness : 400±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Cathode(Top) : 300um X 300um
- Anode(Bottom)
1.6 Active Area : 1.40mm X 1.40mm
(Ta=25℃)
2. Electrical-Optical Characteristics
Parameter
Symbol
Min
Typ
Open Circuit Voltage
VOP
-0.3
Short Circuit Current
ISC
-16
Spectrum Sensitivity
Unit
Condition
-0.32
V
Note(1)
-20
uA
Note(1)
λ
430~1,100
nm
Peak Sensing Wavelength
λP
940
nm
Forward Voltage
VF
Dark Current
ID
Reverse Breakdown Voltage
BVR
-0.5
-5
Max
-1.3
V
IF=10mA
-10
nA
VR=10V
V
IR=10uA
-30
Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.
3. Maximum Ratings
Parameter
(Ta=25℃)
Unit
Symbol
Rating
Reverse Breakdown Voltage
BVR
-30
V
Junction Temperature
TJ
150
℃
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
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