NTE NTE2516 Silicon complementary transistors high current switch Datasheet

NTE2515 (NPN) & NTE2516 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Gain–Bandwidth Product
D Excellent Linearity of hFE
D Fast Switching Time
Applications:
D Display Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 100V, IE = 0
–
–
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
1.0
µA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
140
–
240
VCE = 5V, IC = 3A
40
–
–
VCE = 10V, IC = 500mA
–
180
–
MHz
–
130
–
MHz
Gain–Bandwidth Product
NTE2515
NTE2516
fT
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Output Capacitance
NTE2515
Cob
Test Conditions
VCB = 10V, f = 1MHz
NTE2516
Collector Emitter Saturation Voltage
NTE2515
VCE(sat)
IC = 2A, IB = 200mA
NTE2516
Base Emitter Saturation Voltage
VBE(sat)
IC = 2A, IB = 200mA
Min
Typ
Max
Unit
–
40
–
pF
–
65
–
pF
–
150
400
mV
–
200
500
mV
–
0.9
1.2
V
Collector Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
120
–
–
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
100
–
–
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6
–
–
V
–
100
–
ns
–
900
–
ns
–
800
–
ns
–
50
–
ns
Turn–On Time
ton
Storage Time
NTE2515
tstg
VCC = 25V, VBE = –5V,
10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
NTE2516
Fall Time
tf
Note 1. For NTE2514, the polarity is reversed.
.106 (2.7)
.315 (8.0)
.433
(11.0)
C
E
B
.610
(15.5)
.094 (2.4)
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