ON NRVBA210LT3G Surface mount schottky power rectifier Datasheet

MBRA210LT3G,
NRVBA210LT3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
http://onsemi.com
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes. Typical applications are
AC−DC and DC−DC converters, reverse battery protection, and
“Oring” of multiple supply voltages and any other application where
performance and size are critical.
SCHOTTKY BARRIER
RECTIFIER
2 AMPERES
10 VOLTS
Features









Ultra Low VF
1st in the Market Place with a 10 VR Schottky Rectifier
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Optimized for Low Forward Voltage
AEC−Q101 Qualified and PPAP Capable
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:







Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Ratings:
 Machine Model = C
 Human Body Model = 3A
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
B2L1
AYWW
G
B2L1
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA210LT3G
SMA
(Pb−Free)
5,000/Tape & Reel
NRVBA210LT3G
SMA
(Pb−Free)
5,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 5
1
Publication Order Number:
MBRA210LT3/D
MBRA210LT3G, NRVBA210LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
10
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 110C)
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage/Operating Case Temperature
Operating Junction Temperature
A
160
Tstg, TC
TJ
Voltage Rate of Change
(Rated VR, TJ = 25C)
A
2.0
−55 to +125
dv/dt
C
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Thermal Resistance, Junction−to−Ambient
Symbol
Min Pad
1 Inch Pad
Unit
RqJL
RqJA
22
150
15
81
C/W
VF
TJ = 25C
TJ = 100C
V
0.260
0.325
0.350
0.15
0.23
0.26
TJ = 25C
TJ = 100C
0.25
0.70
40
60
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current
IR
(VR = 5.0 V)
(VR = 10 V)
mA
1. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%.
100
VF @ 125C
10
25C
100C
75C
1
0.1
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
IF, MAXIMUM INSTANTANEOUS
FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
100
VF @ 125C
10
100C
75C
1
0.1
0.45
25C
0.05
0.15
0.25
0.35
0.45
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
0.55
MBRA210LT3G, NRVBA210LT3G
IR, REVERSE CURRENT (AMPS)
1.0E−01
IR @ 125C
100C
1.0E−02
75C
1.0E−03
1.0E−04
1.0E−05
25C
0
2
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
3.5
RATED VOLTAGE
APPLIED
RqJL = 22 C/W
TJ = 125C
3
2.5
SQUARE WAVE
2
1.5
1
0.5
0
90
95
100
105
110
115
120
125
130
TL, LEAD TEMPERATURE (C)
0.9
TJ = 125C
0.8
dc
0.7
0.6
SQUARE WAVE
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
25C
f = 1 MHz
1000
0
1
2
3
4
2.5
3
Figure 5. Forward Power Dissipation
10,000
100
2
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating − Junction to Lead
C, CAPACITANCE (pF)
IF, AVERAGE FORWARD
CURRENT (AMPS)
dc
PFO, AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Typical Reverse Current
5
6
7
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance
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3
9
10
3.5
R(t), TRANSIENT THERMAL RESISTANCE (C/W)
MBRA210LT3G, NRVBA210LT3G
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (C/W)
Figure 7. Thermal Response, Junction to Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.1
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction to Ambient (1 inch pad)
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4
MBRA210LT3G, NRVBA210LT3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRA210LT3/D
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