isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BF775 DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz APPLICATIONS ·Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 4 mA PC Collector Power Dissipation @TC=25℃ 0.28 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.cn 1 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BF775 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 ICES Collector Cutoff Current VCE= 20V; VBE= 0 10 μA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2.5V; IC= 0 0.1 μA hFE DC Current Gain IC= 15mA ; VCE= 8V 40 Current-Gain—Bandwidth Product IC= 15mA ; VCE= 8V; f= 500MHz 3.5 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz PG Power Gain IC= 15mA ; VCE= 8V; f= 900MHz 15 dB PG Power Gain IC= 15mA ; VCE= 8V; f= 1.8GHz 9.5 dB ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 900MHz 12.5 dB ︱S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 1.8GHz 7 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 900MHz 1.8 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 1.8GHz 2.9 dB fT isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 15 UNIT V 200 5 0.38 GHz 0.6 pF