MITSUBISHI M68701H

ATTENTION
MITSUBISHI RF POWER MODULE
OBSERVE PRECAUTIONS
FOR HANDLING
M68701H
ELETROSTATIC
SENSITIVE
DEVICES
Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile
B L O C K D IAG R A M
D im e n s i o n s i n m m
O U T L IN E D R A W IN G
60.5 +/-1
2
3
57.5 +/-0.5
50.2+/-1
2
3
4
14+/-0.5
5
1
4
5
6+/-1
1
11+/-0.5
+0.2
2-R1.6
0
phai 0.45
+/-0.2
8.3 +/-1
PIN:
21.3 +/-1
1 P in
43.3 +/-1
: RF INPUT
2 V G G : G A T E B IA S S U P P L Y
51.3 +/-1
3 V D D : D R A IN B I A S S U P P L Y
4 PO
: RF OUTPUT
(6.4)
2.3+/-0.3
-0.4
3.4+0.8
5 G N D : FIN
H11
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDD
SUPPLY VOLTAGE
VGG
GATE BIAS VOLTAGE
Pin
INPUT POWER
Po
OUTPUT POWER
Tc(OP)
OPERATION CASE TEMPERATURE
Tstg
STORAGE TEMPERATURE
Note:Above parameters are guaranteed independently.
CONDITIONS
VGG<5V,ZG=ZL=50 ohms
f=890-960MHz,ZG=ZL=50 ohms
f=890-960MHz,ZG=ZL=50 ohms
f=890-960MHz,ZG=ZL=50 ohms
RATINGS
17
5.5
10
10
-30 to +100
-40 to +110
UNIT
V
V
mW
W
deg. C
deg. C
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED)
SYMBOL
f
Po
Efficiency
2fo
VSWR in
-
PARAMETER
FREQUENCY RANGE
OUTPUT POWER
TOTAL EFFICIENCY
2nd HARMONIC
INPUT VSWR
LOAD VSWR
TOLERANCE
TEST CONDITIONS
VDD=12.5V,VGG=5V,Pin=1mW
VDD=12.5V,
Pout=6W (VGG adjust)
Pin=1mW
VDD=15.2V,Pin=1mW,Po=6W(VGG adjust)
ZG=50 ohms, LOAD VSWR=20:1
LIMITS
MIN
MAX
890
960
6
35
-30
4
No degradation
or destroy
UNIT
MHz
W
%
dBc
-
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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