MITSUBISHI M68757H

MITSUBISHI RF POWER MODULE
M68757H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
2
26.6±0.2
21.2±0.2
3
2-R1.5±0.1
1
4
5
1
2
3
4
5
0.45
6±1
13.7±1
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
18.8±1
23.9±1
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
f=896-941MHz, ZG=ZL=50Ω
Ratings
9.2
4
70
5
-30 to +100
-40 to +100
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
f
PO
ηT
2fO
ρin
Parameter
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Test conditions
-
VDD=7.2V, VGG=3.5V, Pin=50mW
Limits
Min
896
3
30
Max
941
-28
4
Stability
ZG=ZL=50Ω, VDD=5-9.2V,
Load VSWR <4:1
No parasitic oscillation
Load VSWR tolerance
VDD=9V, Pin=50mW,
PO=3W (VGG Adjust), ZL=20:1
No degradation or
destroy
Unit
MHz
W
%
dBc
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68757H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY
6
60
5
50
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
PO
4
40
ηT
10.0
10.0
PO
3
30
2
20
VDD=7.2V
ρin
1 VGG=3.5V
10
Pin=50mW
ZG=ZL=50 Ω
0
0
880 890 900 910 920 930 940 950
1.0
1.0
f=896MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
1
FREQUENCY f (MHz)
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.5
55
5.0
50
4.5
10.0
10.0
PO
1.0
1.0
f=941MHz
VDD=7.2V
VGG=3.5V
ZG=ZL=50Ω
0.1
3.5
25
20
1.5
15
f=896MHz
VDD=7.2V
10
VGG=3.5V
5
ZG=ZL=50 Ω
0
3.0
3.5
4.0
0.0
1.5
50
9
45
8
4.0
40
7
35
30
PO
25
2.0
20
1.5
15
f=941MHz
VDD=7.2V
10
VGG=3.5V
5
ZG=ZL=50 Ω
0
3.0
3.5
4.0
1.0
0.5
0.0
1.5
2.0
2.5
GATE SUPPLY VOLTAGE VGG (V)
2.5
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
10
50
4.5
2.5
2.0
GATE SUPPLY VOLTAGE VGG (V)
5.0
3.0
30
2.0
0.5
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.5
55
ηT
35
2.5
INPUT POWER Pin (mW)
3.5
40
PO
1.0
0.1
100
10
45
ηT
4.0
3.0
1
0.1
100
10
45
ηT
40
35
6
PO
30
5
25
4
20
3
15
f=896MHz
VGG=3.5V
Pin=50mW
ZG=ZL=50Ω
2
1
0
2
3
4
5
6
7
8
10
5
0
9 10 11 12
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68757H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
10
50
9
45
8
40
ηT
7
6
35
PO
30
5
25
4
20
3
15
f=941MHz
VGG=3.5V
Pin=50mW
ZG=ZL=50Ω
2
1
0
2
3
4
5
6
7
8
10
5
0
9 10 11 12
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97