Diotec BCW66F Surface mount general purpose si-epi-planar transistor Datasheet

BCW66F ... BCW66H
BCW66F ... BCW66H
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
NPN
Version 2006-07-31
Power dissipation – Verlustleistung
1.1
2.9 ±0.1
0.4
Plastic case
Kunststoffgehäuse
1
1.3±0.1
2.5 max
3
Type
Code
250 mW
2
1.9
Dimensions - Maße [mm]
1=B
2=E
3=C
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BCW66F ... BCW66H
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
45 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
75 V
Collector-Base-voltage – Kollektor-Basis-Spannung
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
800 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
1000 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
1
2
Min.
Typ.
Max.
2)
VCE = 10 V, IC = 100 µA
BCW66F
BCW66G
BCW66H
hFE
hFE
hFE
35
50
80
–
–
–
–
–
–
VCE = 1 V, IC = 10 mA
BCW66F
BCW66G
BCW66H
hFE
hFE
hFE
75
100
180
–
–
–
–
–
–
VCE = 1 V, IC = 100 mA
BCW66F
BCW66G
BCW66H
hFE
hFE
hFE
100
160
250
160
250
350
250
400
630
VCE = 2 V, IC = 500 mA
BCW66F
BCW66G
BCW66H
hFE
hFE
hFE
–
–
–
35
60
100
–
–
–
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BCW66F ... BCW66H
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VCEsat
VCEsat
–
–
–
–
300 mV
700 mV
VBEsat
VBEsat
–
–
–
–
1.25 V
2.0 V
ICB0
ICB0
–
–
–
–
20 nA
20 µA
IEB0
–
–
20 nA
fT
–
170 MHz
–
CCBO
–
6 pF
–
CEBO
–
60 pF
–
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 45 V, (E open)
VCE = 45 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
2
1
2
RthA
< 420 K/W 1)
BCW68F ... BCW68H
BCW66F = EF
BCW66G = EG
BCW66H = EH
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
Similar pages