AOSMD AOB418 N-channel enhancement mode field effect transistor Datasheet

AOB418
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB418 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
VDS (V) = 30V
ID = 110A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 4.5V)
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C
G
Pulsed Drain Current
Avalanche Current C
C
TC=25°C
Power Dissipation B
A
V
Junction and Storage Temperature Range
200
IAR
40
A
220
mJ
EAR
100
W
50
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
68
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
±12
ID
IDM
PD
TC=100°C
TA=25°C
Power Dissipation
Units
V
110
TA=100°C B
Repetitive avalanche energy L=0.1mH
Maximum
30
RθJA
RθJL
Typ
8.1
33
0.84
°C
Max
12
40
1.5
Units
°C/W
°C/W
°C/W
AOB418
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
TJ=55°C
nA
2
V
4.9
6
8.4
10.5
VGS=4.5V, I D=30A
5.9
7.2
VDS=5V, ID=30A
103
TJ=125°C
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, V DS=15V, I D=30A
VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
A
mΩ
mΩ
S
0.73
1
V
110
A
2100
pF
536
pF
165
pF
0.95
Ω
19.6
nC
3.6
nC
8
nC
5.9
ns
15.9
ns
34
ns
20
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
32.5
Body Diode Reverse Recovery Charge
IF=30A, dI/dt=100A/µs
26
Qrr
µA
100
Static Drain-Source On-Resistance
Coss
5
1.5
VGS=10V, I D=30A
Crss
Units
V
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
IS
Max
30
IDSS
RDS(ON)
Typ
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
3.5V
50
50
VDS=5V
3V
40
125°C
ID(A)
ID (A)
40
30
30
25°C
20
20
VGS=2.5V
10
10
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
7.5
1.8
6.5
Normalized On-Resistance
7
RDS(ON) (mΩ)
2
VGS=4.5V
6
5.5
VGS=10V
5
ID=30A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
1
4.5
0
10
20
30
40
50
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
1.0E+02
1.0E+01
16
125°C
1.0E+00
IS (A)
ID=30A
RDS(ON) (mΩ)
75
12
1.0E-01
25°C
1.0E-02
125°C
1.0E-03
8
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
5
VDS=15V
ID=30A
3000
Capacitance (pF)
VGS (Volts)
4
3
2
2500
Ciss
2000
1500
Coss
1000
1
500
0
Crss
0
0
5
10
15
20
25
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
100
RDS(ON)
limited
100
10µs
1ms
10ms
100µs
0.1s
10
1s
1
0
0.01
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
10
40
20
DC
0.1
0.1
60
10s
TJ(Max)=150°C
TA=25°C
1
TJ(Max)=150°C
TA=25°C
80
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOB418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
tA =
40
L⋅ ID
BV − V DD
20
80
60
40
20
0
0.00001
0
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
80
60
40
20
0
0
25
50
75
100
125
150
T CASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
T CASE (°C)
Figure 13: Power De-rating (Note B)
120
Current rating ID(A)
100
175
175
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