MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz • Leadless Ceramic Package APPLICATION S- to Ku-Band Driver Amplifiers and Oscillators QUALITY General Grade ORDERING INFORMATION Part Number Quantity Supply Form MGF1951A-01 3.000 pcs/reel Tape & Reel Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS (Ta=+25°C) Symbol Parameter Rating Unit VGDO Gate to Drain Voltage -8 V VGSO Gate to Source Voltage -8 V ID Drain Current 120 mA PT Total Power Dissipation 300 mW Tch Channel Temperature 125 °C Tstg Storage Temperature -65 to +125 °C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS (Ta=+25°C) Symbol Parameter MIN TYP MAX Unit IG=-30µA -8 -15 — V Saturated Drain Current VDS=3V, VGS=0V 35 60 120 mA Gate to Source Cut-off Voltage VDS=3V, ID=300µA -0.3 -1.4 -3.5 V P1dB Output Power at 1dB Gain Compression VDS=3V, ID=30mA, f=12GHz 11 13 — dBm GLP Linear Power Gain VDS=3V, ID=30mA, Pin=-5dBm, f=12GHz 7 9 — dB V(BR)GDO Gate to Drain Breakdown Voltage IDSS VGS(off) Test Conditions MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET OUTLINE DRAWING (mm) Side ② 2(1 2-R0.275 2-R0.20 ② ① ② ② ③ .0 5 C 2 4AA ① ±0 ① 40. 55 2.15 +0.2 -0.1 ② ③ View A +0.2 -0.1 0) .2 (2 5 .0 2±0 2 1. 2.15 Bottom .0 2) Top 0.20 ±0.1 0.80 ±0.1 5 .0 ±0 5 0. 2- ③ ② ① ① Gate (round shape) (0.30) ② Source (2.30) ③ Drain (square shape) View A MITSUBISHI (2/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET TYPICAL CHARACTERISTICS (Ta=+25°C) DRAIN CURRENT vs DRAIN VOLTAGE DRAIN CURRENT vs GATE VOLTAGE 80 80 70 Drain Current ID (mA) Drain Current ID (mA) VDS=3V VGS=0V 70 60 50 -0.2V/step 40 30 20 50 40 30 20 10 10 0 60 0 1 2 3 0 -2.0 4 Drain to Source Voltage VDS (V) -1.5 -1.0 -0.5 0 Gate to Source Voltage VGS (V) OUTPUT POWER vs INPUT POWER Output Power Pout (dBm) 20 VDS=3V ID=30mA f=12GHz 15 10 5 0 -10 -5 0 5 10 Input Power Pin (dBm) MITSUBISHI (3/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET S PARAMETERS (VDS=3V, ID=30mA, Ta=+25°C) S11 S21 S12 S22 f (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.984 0.946 0.906 0.857 0.811 0.771 0.736 0.710 0.679 0.645 0.594 0.549 0.508 0.481 0.472 0.508 0.573 0.646 -17.7 -38.6 -52.5 -71.1 -85.3 -97.4 -109.8 -121.6 -133.6 -146.3 -159.8 -175.7 165.8 142.3 116.9 92.7 70.4 52.2 4.239 4.103 3.914 3.710 3.445 3.197 2.984 2.847 2.737 2.659 2.600 2.570 2.532 2.480 2.378 2.289 2.160 1.975 163.2 144.3 131.2 115.9 103.3 92.5 81.7 70.7 60.4 50.1 39.5 28.4 16.2 2.5 -10.9 -23.8 -37.5 -51.6 0.016 0.031 0.043 0.054 0.061 0.065 0.069 0.071 0.075 0.083 0.089 0.091 0.095 0.100 0.101 0.103 0.105 0.103 78.2 64.3 54.3 44.2 35.6 29.6 23.7 19.0 15.1 11.3 2.6 -2.7 -9.0 -18.0 -26.7 -34.7 -42.9 -50.4 0.581 0.565 0.548 0.518 0.509 0.500 0.502 0.507 0.509 0.513 0.496 0.472 0.443 0.399 0.342 0.279 0.211 0.135 -11.3 -26.2 -34.3 -45.5 -54.9 -61.4 -66.9 -72.1 -75.9 -79.6 -84.2 -87.2 -91.4 -96.7 -101.7 -107.6 -112.1 -115.3 K MAG/MSG (dB) 0.18 0.32 0.43 0.53 0.64 0.76 0.86 0.93 0.99 0.99 1.09 1.19 1.27 1.34 1.45 1.47 1.44 1.44 24.3 21.3 19.6 18.4 17.5 16.9 16.4 16.0 15.6 15.1 12.8 11.9 11.1 10.5 9.7 9.4 9.2 8.9 Gate Source Source S-Parameter Reference Planes Drain MITSUBISHI (4/4) 1 Aug 2002