Kexin MJD42C Complementary power transistor Datasheet

Transistors
SMD Type
Complementary Power Transistors
MJD41C(NPN)
MJD42C(PNP)
TO-252
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
6.50
+0.2
5.30-0.2
Monolithic Construction With Built?in Base ? Emitter Resistors
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Pb-Free Packages are Available
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter voltage
Parameter
VCEO
100
V
Collector-base voltage
VCB
100
V
Emitter-base voltage
VEB
5
V
Collector current
IC
6
A
Collector current (pulse)
ICP
10
A
A
Base current
IB
2
Total Device Dissipation FR-5 Board
@TA = 25
Derate above 25
PD
20
0.16
W
W/
Total Device Dissipation Alumina Substrate
@TA = 25
Derate above 25
PD
1.75
0.014
W
W/
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Thermal Resistance, Junction-to-Case
RèJC
6.25
/W
Thermal Resistance, Junction-to-Ambient
RèJA
71.4
/W
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1
Transistors
SMD Type
MJD41C(NPN)
MJD42C(PNP)
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter sustaining voltage
VCEo(sus) IC = 30 mA, IB = 0
Min
Typ
Max
100
Unit
V
Collector cutoff current
ICEO
VCE = 60 V, IB = 0
50
ìA
Collector cutoff current
ICES
VCE = 100 V,VEB = 0
10
ìA
Emitter cutoff current
IEBO
VBE = 5V, IC = 0
0.5
mA
DC current gain *
hFE
IC = 0.3 A, VCE = 4 V
30
IC = 3 A, VCE = 4 V
15
Collector-emitter saturation voltage *
VCE(sat) IC = 6 A, IB = 600 mA
Base-emitter saturation voltage *
VBE(on) IC = 6 A, VCE = 4 V
2
fT
IC = 500 mA,VCE = 10 V,ftest = 1 MHz
3
Small-signal current gain
hfe
IC = 0.5 A, VCE = 10 V, f = 1 kHz
20
*1 Pulse test: pulse width
300 ìs, duty cycle
ftest
hFE Classification
TYPE
MJD41C
MJD42C
Marking
J41C
J42C
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2.0%.
75
1.5
Current-gain-bandwidth product *2
*2 fT= hfe
2
Testconditons
V
V
MHz
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