MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S64PHB is 16777216 - word x 64-bit Synchronous DRAM module. This consist of eight industry standard 16M x 8 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module ,suitable for easy interchange or addition of module. 85pin 1pin 94pin 10pin 95pin 11pin 124pin 40pin 125pin 41pin 168pin 84pin FEATURES Type name MH16S64PHB-6 Max. Frequency 133MHz Access Time from CLK [component level] 5.4ns (CL = 3) Utilizes industry standard 16M X 8 Synchronous DRAMs in TSOP package Single 3.3V +/- 0.3V supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Sequential and interleave burst (programmable) Random column access Burst Write / Single Write(programmable) Auto precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles every 64ms APPLICATION Main memory or graphic memory in computer systems MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 1 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM PIN NO. PIN NAME PIN NO. PIN NAME 1 VSS 43 VSS 2 DQ0 44 NC 3 DQ1 45 /S2 4 DQ2 46 5 DQ3 47 6 VDD 7 8 PIN NO. PIN NAME PIN NO. PIN NAME 85 VSS 127 VSS 86 DQ32 128 87 DQ33 129 CKE0 NC DQMB2 88 DQ34 130 DQMB6 DQMB3 89 DQ35 131 DQMB7 48 NC 90 VDD 132 NC DQ4 49 VDD 91 DQ36 133 VDD DQ5 50 NC 92 DQ37 134 NC 9 DQ6 51 NC 93 DQ38 135 NC 10 DQ7 52 NC 94 DQ39 136 NC 11 DQ8 53 NC 95 DQ40 137 NC 12 VSS 54 VSS 96 VSS 138 VSS 13 DQ9 55 DQ16 97 DQ41 139 DQ48 14 DQ10 56 DQ17 98 DQ42 140 DQ49 15 DQ11 57 DQ18 99 DQ43 141 DQ50 16 DQ12 58 DQ19 100 DQ44 142 DQ51 17 DQ13 59 VDD 101 DQ45 143 VDD 18 VDD 60 DQ20 102 VDD 144 DQ52 19 DQ14 61 NC 103 DQ46 145 NC 20 DQ15 62 NC 104 DQ47 146 NC 21 NC 63 NC 105 NC 147 NC 22 NC 64 VSS 106 NC 148 VSS 23 VSS 65 DQ21 107 VSS 149 DQ53 24 NC 66 DQ22 108 NC 150 DQ54 DQ55 25 NC 67 DQ23 109 NC 151 26 VDD 68 VSS 110 VDD 152 VSS 27 /WE 69 DQ24 111 /CAS 153 DQ56 28 DQMB0 70 DQ25 112 DQMB4 154 DQ57 29 DQMB1 71 DQ26 113 DQMB5 155 DQ58 30 /S0 72 DQ27 114 NC 156 DQ59 31 NC 73 VDD 115 /RAS 157 VDD 32 VSS 74 DQ28 116 VSS 158 DQ60 33 A0 75 DQ29 117 A1 159 DQ61 34 A2 76 DQ30 118 A3 160 DQ62 35 A4 77 DQ31 119 A5 161 DQ63 36 A6 78 VSS 120 A7 162 VSS 37 A8 79 CK2 121 A9 163 CK3 38 A10 80 NC 122 BA0 164 NC 39 BA1 81 WP 123 A11 165 SA0 40 VDD 82 SDA 124 VDD 166 SA1 41 42 VDD CK0 83 84 SCL VDD 125 126 CK1 167 168 SA2 VDD NC NC = No Connection MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 2 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM /S0 DQ0 DQ1 DQ32 DQ33 DQ2 DQ3 DQ4 DQ5 DQ34 DQ35 DQ36 DQ37 D0 DQ6 DQ7 D4 DQ38 DQ39 DQ40 DQ41 DQ42 DQ8 DQ9 DQ10 DQ11 DQ12 DQ43 DQ44 D1 DQ13 DQ14 DQ15 D5 DQ45 DQ46 DQ47 /S2 DQ16 DQ48 DQ17 DQ18 DQ19 DQ20 DQ21 DQ49 DQ50 DQ51 DQ52 DQ53 D2 DQ22 DQ23 DQ54 DQ55 DQ24 DQ25 DQ56 DQ57 DQ26 DQ27 DQ58 DQ59 D3 DQ28 DQ29 DQ60 DQ61 DQ30 DQ31 DQ62 DQ63 D6 D7 SERIAL PD SCL WP 47K CKE0 A11-0,BA0-1 /RAS /CAS /WE MIT-DS-0321-0.0 D0-7 D0-7 D0-7 D0-7 D0-7 DQM0 DQM 1 DQM 2 DQM 3 DQM 4 DQM 5 DQM 6 DQM 7 D0 D1 D2 D3 D4 D5 D6 D7 MITSUBISHI ELECTRIC A0 A1 SDA A2 SA0 SA1 SA2 VDD D0-7 VSS D0-7 CK0 4DRAMs+3.3pF CK1 TERMINATION CK2 4DRAMs+3.3pF CK3 TERMINATION 12/May. /1999 3 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM PIN FUNCTION Input Master Clock:All other inputs are referenced to the rising edge of CK CKE0 Input Clock Enable:CKE controls internal clock.When CKE is low,internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE E becomes asynchronous input.Self refresh is maintained as long as CKE is low. /S0,2 Input Chip Select: When /S is high,any command means No Operation. /RAS,/CAS,/W Input A0-11 Input BA0-1 Input CK0,2 DQ0-63 DQM0-7 Vdd,Vss MIT-DS-0321-0.0 Combination of /RAS,/CAS,/W defines basic commands. A0-11 specify the Row/Column Address in conjunction with BA.The Row Address is specified by A0-11.The Column Address is specified by A0-9.A10 is also used to indicate precharge option.When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, both banks are precharged. Bank Address:BA0,1 is specifies the four bank to which a command is applied.BA must be set with ACT ,PRE ,READ ,WRITE commands Data In and Data out are referenced to the rising edge Input/Output of CK Din Mask/Output Disable:When DQMB is high in burst write.Din for the current cycle is masked.When DQMB is high Input in burst read,Dout is disabled at the next but one cycle. Power Supply for the memory mounted Power Supply module. MITSUBISHI ELECTRIC 12/May. /1999 4 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM BASIC FUNCTIONS The MH16S64PHB provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh. Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge option,respectively. To know the detailed definition of commands please see the command truth table. CK /S /RAS Chip Select : L=select, H=deselect Command /CAS Command /WE Command CKE Refresh Option @refresh command A10 Precharge Option @precharge or read/write command define basic commands Activate(ACT) [/RAS =L, /CAS = /WE =H] ACT command activates a row in an idle bank indicated by BA. Read(READ) [/RAS =H,/CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA.First output data appears after /CAS latency. When A10 =H at this command,the bank is deactivated after the burst read(auto-precharge,READA). Write(WRITE) [/RAS =H, /CAS = /WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write(auto-precharge,WRITEA). Precharge(PRE) [/RAS =L, /CAS =H,/WE =L] PRE command deactivates the active bank indicated by BA. This command also terminates burst read / write operation. When A10 =H at this command, both banks are deactivated(precharge all, PREA). Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H] PEFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically. MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 5 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM COMMAND TRUTH TABLE COMMAND MNEMONIC Deselect No Operation DESEL NOP Row Adress Entry & Bank Activate CKE CKE n-1 n H X H X /S /RAS /CAS /WE BA0,1 A11 A10 A0-9 H L X H X H X H X X X X X X X X ACT H X L L H H V V V V Single Bank Precharge Precharge All Bank PRE PREA H H X X L L L L H H L L V X X X L H X X Column Address Entry & Write WRITE H X L H L L V X L V Column Address Entry & Write with AutoPrecharge WRITEA H X L H L L V X H V Column Address Entry & Read READ H X L H L H V X L V Column Address Entry & Read with Auto Precharge READA H X L H L H V X H V Auto-Refresh Self-Refresh Entry REFA REFS Self-Refresh Exit REFSX H H L L H L H H L L H L L L X H L L X H H H X H X X X X X X X X X X X X X X X X Burst Terminate Mode Register Set TBST MRS H H X X L L H L H L L L X L X L X L X V*1 H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number NOTE: 1.A7-9 = 0, A0-6 = Mode Address MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 6 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM FUNCTION TRUTH TABLE Current State /S IDLE H X X X X DESEL NOP L H H H X NOP NOP L H H L BA TBST ILLEGAL*2 L H L X BA,CA,A10 L L H H BA,RA ACT L L H L BA,A10 PRE/PREA L L L H X L L L L H X X X X L H H H X NOP NOP L H H L BA TBST NOP L H L H BA,CA,A10 L H L L BA,CA,A10 L L H H BA,RA ACT Bank Active/ILLEGAL*2 L L H L BA,A10 PRE/PREA Precharge/Precharge All L L L H X L L L L H X X X X DESEL NOP(Continue Burst to END) L H H H X NOP NOP(Continue Burst to END) L H H L BA TBST Terminate Burst ROW ACTIVE READ /RAS /CAS /WE Address Command Action READ/WRITE ILLEGAL*2 Op-Code, Mode-Add Auto-Refresh*5 MRS Mode Register Set*5 READ/READA WRITE/ WRITEA Mode-Add NOP*4 REFA DESEL Op-Code, Bank Active,Latch RA NOP Begin Read,Latch CA, Determine Auto-Precharge Begin Write,Latch CA, Determine Auto-Precharge REFA ILLEGAL MRS ILLEGAL Terminate Burst,Latch CA, L H L H BA,CA,A10 READ/READA Begin New Read,Determine Auto-Precharge*3 Terminate Burst,Latch CA, L H L L BA,CA,A10 WRITE/WRITEA Begin Write,Determine Auto- L L H H BA,RA ACT L L H L BA,A10 PRE/PREA L L L H X L L L L Precharge*3 MIT-DS-0321-0.0 Op-Code, Mode-Add MITSUBISHI ELECTRIC Bank Active/ILLEGAL*2 Terminate Burst,Precharge REFA ILLEGAL MRS ILLEGAL 12/May. /1999 7 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM FUNCTION TRUTH TABLE(continued) Current State /S /RAS /CAS /WE WRITE H X X X X Address Command Action DESEL NOP(Continue Burst to END) L H H H L H H L X NOP NOP(Continue Burst to END) BA TBST Terminate Burst Terminate Burst,Latch CA, L H L H BA,CA,A10 READ/READA Begin Read,Determine AutoPrecharge*3 WRITE/ L H L L BA,CA,A10 L L H H BA,RA ACT L L H L BA,A10 PRE/PREA L L L H X Op-Code, L L L L READ with H X X X Mode-Add X AUTO L H H H X PRECHARGE L H H L BA L H L H BA,CA,A10 L H L L BA,CA,A10 L L H H BA,RA WRITEA ACT L L H L BA,A10 PRE/PREA L L L H X L L L L WRITE with H X X X X AUTO L L H H H H H L X BA L H L H BA,CA,A10 L H L L BA,CA,A10 PRECHARGE H H H L BA,RA BA,A10 L L L H X MIT-DS-0321-0.0 L L L Terminate Burst,Precharge REFA ILLEGAL MRS ILLEGAL DESEL NOP(Continue Burst to END) NOP NOP(Continue Burst to END) TBST ILLEGAL WRITE/ Mode-Add L L Precharge*3 Bank Active/ILLEGAL*2 READ/READA ILLEGAL Op-Code, L L L WRITEA Terminate Burst,Latch CA, Begin Write,Determine Auto- ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 REFA ILLEGAL MRS ILLEGAL DESEL NOP(Continue Burst to END) NOP TBST NOP(Continue Burst to END) ILLEGAL READ/READA ILLEGAL WRITE/ WRITEA ACT PRE/PREA Op-Code, Mode-Add MITSUBISHI ELECTRIC ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 REFA ILLEGAL MRS ILLEGAL 12/May. /1999 8 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM FUNCTION TRUTH TABLE(continued) Current State /S PRE - H /RAS /CAS X X /WE X X Address Command DESEL NOP(Idle after tRP) Action CHARGING L H H H X NOP NOP(Idle after tRP) L H H L BA TBST ILLEGAL*2 L H L X BA,CA,A10 L L H H BA,RA ACT L L H L BA,A10 PRE/PREA L L L H X L L L L ROW H X X X X DESEL NOP(Row Active after tRCD ACTIVATING L H H H X NOP NOP(Row Active after tRCD L H H L BA TBST ILLEGAL*2 L H L X BA,CA,A10 L L H H BA,RA ACT ILLEGAL*2 L L H L BA,A10 PRE/PREA ILLEGAL*2 L L L H X L L L L WRITE RE- H X X X X DESEL NOP COVERING L H H H X NOP NOP L H H L BA TBST ILLEGAL*2 L H L X BA,CA,A10 L L H H BA,RA ACT ILLEGAL*2 L L H L BA,A10 PRE/PREA ILLEGAL*2 L L L H X L L L L READ/WRITE ILLEGAL*2 Op-Code, Mode-Add ILLEGAL*2 NOP*4(Idle after tRP) REFA ILLEGAL MRS ILLEGAL READ/WRITE ILLEGAL*2 Op-Code, Mode-Add REFA ILLEGAL MRS ILLEGAL READ/WRITE ILLEGAL*2 REFA ILLEGAL MRS ILLEGAL Op-Code, MIT-DS-0321-0.0 Mode-Add MITSUBISHI ELECTRIC 12/May. /1999 9 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM FUNCTION TRUTH TABLE(continued) Current State /S /RAS /CAS /WE Address Command Action RE- H X X X X DESEL NOP(Idle after tRC) FRESHING L H H H X NOP NOP(Idle after tRC) L H H L BA TBST ILLEGAL L H L X BA,CA,A10 L L H H BA,RA ACT ILLEGAL L L H L BA,A10 PRE/PREA ILLEGAL L L L H X REFA ILLEGAL L L L L MRS ILLEGAL MODE H X X X X DESEL NOP(Idle after tRSC) REGISTER L H H H X NOP NOP(Idle after tRSC) SETTING L H H L BA TBST ILLEGAL L H L X BA,CA,A10 L L H H BA,RA ACT ILLEGAL L L H L BA,A10 PRE/PREA ILLEGAL L L L H X REFA ILLEGAL L L L L MRS ILLEGAL READ/WRITE ILLEGAL Op-Code, Mode-Add READ/WRITE ILLEGAL Op-Code, Mode-Add ABBREVIATIONS: H = Hige Level, L = Low Level, X = Don't Care BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation NOTES: 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Must satisfy bus contention, bus turn around, write recovery requirements. 4. NOP to bank precharging or in idle state.May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. ILLEGAL = Device operation and / or date-integrity are not guaranteed. MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 10 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM FUNCTION TRUTH TABLE FOR CKE Current State CKE CKE n-1 n /S /RAS /CAS /WE Add Action SELF - H X X X X X X INVALID REFRESH*1 L H H X X X X Exit Self-Refresh(Idle after tRC) L H L H H H X Exit Self-Refresh(Idle after tRC) L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP(Maintain Self-Refresh) POWER H X X X X X X INVALID DOWN L H X X X X X Exit Power Down to Idle L L X X X X X NOP(Maintain Self-Refresh) ALL BANKS H H X X X X X Refer to Function Truth Table IDLE*2 H L L L L H X Enter Self-Refresh H L H X X X X Enter Power Down H L L H H H X Enter Power Down H L L H H L X ILLEGAL H L L H L X X ILLEGAL H L L L X X X ILLEGAL L X X X X X X Refer to Current State = Power Down ANY STATE H H X X X X X Refer to Function Truth Table other than H L X X X X X Begin CK0 Suspend at Next Cycle*3 listed above L H X X X X X Exit CK0 Suspend at Next Cycle*3 L L X X X X X Maintain CK0 Suspend ABBREVIATIONS: H = High Level, L = Low Level, X = Don't Care NOTES: 1. CKE Low to High transition will re-enable CK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT. 2. Power-Down and Self-Refresh can be entered only form the All banks idle State. 3. Must be legal command. MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 11 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM POWER ON SEQUENCE Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning. 1. Clock will be applied at power up along with power. Attempt to maintain CKE high, DQMB high and NOP condition at the inputs along with power. 2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 200µs. 3. Issue precharge commands for all banks. (PRE or PREA) 4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode register. After these sequence, the SDRAM is idle state and ready for normal operation. MODE REGISTER Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register(MRS). The mode register stores these date until the next MRS command, which may be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is ready for new command. CK /S BA0 BA1 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 /RAS /CAS 0 0 0 0 WM 0 0 LTMODE BT BL /WE BA0,1 A11-0 LATENCY MODE WRITE MODE CL /CAS LATENCY 000 001 R R 010 011 100 101 110 111 2 3 R R R R 0 1 MIT-DS-0321-0.0 BURST SINGLE BIT BURST LENGTH BURST TYPE V BL BT= 0 BT= 1 000 001 010 011 1 2 4 8 1 2 4 8 100 101 R R R R 110 111 R FP R R 0 1 SEQUENTIAL INTERLEAVED R:Reserved for Future Use FP: Full Page MITSUBISHI ELECTRIC 12/May. /1999 12 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM CK Command Read Write Y Y Address Q0 DQ CL= 3 BL= 4 Initial Address /CAS Latency Q1 Q2 Burst Length BL Q3 D0 Burst Type D1 D2 D3 Burst Length Column Addressing A2 A1 A0 0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6 0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5 0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4 Sequential Interleaved 8 1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2 1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1 1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0 - 0 0 0 1 2 3 0 1 2 3 - 0 1 1 2 3 0 1 0 3 2 4 - 1 0 2 3 0 1 2 3 0 1 - 1 1 3 0 1 2 3 2 1 0 - - 0 0 1 0 1 1 0 1 0 2 - - 1 MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 13 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Condition Ratings Unit Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V VI Input Voltage with respect to Vss -0.5 ~ 4.6 V VO Output Voltage with respect to Vss -0.5 ~ 4.6 V IO Output Current 50 mA Pd Power Dissipation 8 W Topr Operating Temperature 0 ~ 70 C Tstg Storage Temperature -45 ~ 100 C Ta=25C RECOMMENDED OPERATING CONDITION (Ta=0 ~ 70C, unless otherwise noted) Limits Symbol Parameter Vdd Vss Min. Typ. Max. Unit Supply Voltage 3.0 3.3 3.6 V Supply Voltage 0 0 0 V VIH*1 High-Level Input Voltage all inputs 2.0 Vdd+0.3 V VIL*2 Low-Level Input Voltage all inputs -0.3 0.8 V NOTES) 1. VIH(max)=5.5V for pulse width less than 10ns. 2. VIL(min)= -1.0V for pulse width less than 10ns. CAPACITANCE (Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Symbol Parameter Test Condition CI(A) Input Capacitance, address pin CI(C) Input Capacitance, control pin CI(K) Input Capacitance, CK0 pin CI/O Input Capacitance, I/O pin MIT-DS-0321-0.0 1Mhz 1.4V bias 200mV swing Vcc=3.3V MITSUBISHI ELECTRIC Limits(max.) Unit 45.5 pF 45.5 pF 32.3 pF 16.5 pF 12/May. /1999 14 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM AVERAGE SUPPLY CURRENT from Vdd (Ta=0 ~70C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted) Parameter Symbol Limits (max) Test Condition operating current single bank operation (discrete) Icc1 tRC=min.tCLK=min, BL=1, CL=3 precharge stanby current in Non power-down mode Icc2N CKE=H,tCLK=15ns,VIH> Vcc-0.2V, VIL<0.2V /CS> Vcc-0.2V Icc2NS CLK=L & CKE=H, VIH> Vcc-0.2V, VIL<0.2V (fixed) precharge stanby current in Power-down mode Icc2P CKE=L,tCLK=15ns Icc2PS CKE=CLK=L /CS> Vcc-0.2V Icc3N active stanby current CKE=H,tCLK=15ns Icc3NS CKE=H,CLK=L Unit Note 1040 mA *1 200 mA *1 120 mA *1 16 mA *1 8 mA *1 320 mA *1 280 mA *1 burst current Icc4 tCLK=min, BL=4, CL=3 all banks active(discerte) 1600 mA *1 auto-refresh current Icc5 tRC=min, tCLK=min 1600 mA *1 self-refresh current Icc6 CKE <0.2V 16 mA *1 Note) 1.Icc(max) is specified at the output open condition. AC OPERATING CONDITIONS AND CHARACTERISTICS (Ta=0 ~ 70C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted) Limits Symbol Parameter VOH(DC) High-Level Output Voltage(DC) VOL(DC) Low-Level Output Voltage(DC) IOZ Off-stare Output Current Ii Input Current MIT-DS-0321-0.0 Test Condition IOH=-2mA IOL=2mA Q floating VO=0 ~ Vdd VIH=0 ~ Vdd+0.3V MITSUBISHI ELECTRIC Min. Max. 2.4 0.4 -10 10 -80 80 Unit V V uA uA 12/May. /1999 15 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM AC TIMING REQUIREMENTS (Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Input Pulse Levels: 0.8V to 2.0V Input Timing Measurement Level: 1.4V Limits Symbol Parameter tCLK CK cycle time tCH tCL tT tIS tIH tRC tRFC tRCD tRAS tRP tWR tRRD tRSC tSRX tPDE tREF CK High pulse width CK Low pulse width Transition time of CK Input Setup time(all inputs) Input Hold time(all inputs) Row Cycle time Row Refresh Cycle time Row to Column Delay Row Active time Row Precharge time Write Recovery time Act to Act Deley time Mode Register Set Cycle time Self Refresh Exit time Power Down Exit time Refresh Interval time Min. CL=3 CL=2 7.5 2.5 2.5 1 10 1.5 0.8 67.5 80 22.5 45 22.5 15 15 15 7.5 7.5 100K 64 CK 1.4V Signal 1.4V MIT-DS-0321-0.0 Max. MITSUBISHI ELECTRIC Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms Any AC timing is referenced to the input signal crossing through 1.4V. 12/May. /1999 16 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM SWITCHING CHARACTERISTICS (Ta=0 ~ 70C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Symbol Limits Parameter Min. tAC Access time from CK tOH Output Hold time from CK tOLZ tOHZ CL=3 Max. 5.4 CL=2 - Delay time, output low impedance from CK Delay time, output high impedance from CK Unit ns 2.7 ns 0 ns 2.7 5.4 Note *1 ns NOTE) 1.If clock rising time is longer than 1ns, (tr /2-0.5ns) should be added to the parameter. Output Load Condition CK 1.4V DQ 1.4V VOUT Ext.CL=50pF Output Timing Measurement Reference Point CK 1.4V DQ 1.4V tAC MIT-DS-0321-0.0 tOH tOHZ MITSUBISHI ELECTRIC 12/May. /1999 17 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst WRITE (single bank) BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRAS tRP /RAS tRCD tRCD /CAS /WE tWR CKE DQM A0-9 X A10 X X A11 X X BA0,1 0 DQ Y 0 D0 ACT#0 X 0 D0 WRITE#0 D0 0 D0 Y 0 D0 PRE#0 ACT#0 D0 D0 D0 WRITE#0 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 18 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst WRITE (multi bank) BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRRD tRRD tRAS tRP /RAS tRCD tRCD /CAS /WE tWR tWR CKE DQM A0-9 X X A10 X A11 BA0,1 X X X X X X X X X 0 1 DQ Y 0 D0 ACT#0 Y D0 WRITE#0 ACT#1 D0 D0 1 0 D1 D1 0 D1 PRE#0 WRITE#1 D1 1 2 Y 0 D0 ACT#0 D0 D0 D0 ACT#2 WRITE#0 PRE#1 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 19 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst READ (single bank) BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRAS tRP /RAS tRCD tRCD /CAS /WE CKE DQM DQM read latency =2 A0-9 X A10 X X A11 X X BA0,1 0 Y X 0 0 0 Y 0 CL=3 DQ Q0 ACT#0 READ#0 Q0 Q0 PRE#0 Q0 Q0 ACT#0 Q0 READ#0 READ to PRE ³BL allows full data out Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 20 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst READ (multi bank) BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRRD tRRD tRAS tRP /RAS tRCD tRCD /CAS /WE CKE DQM DQM read latency =2 A0-9 X X A10 X A11 BA0,1 Y Y X X X X X X X X X 0 1 0 1 0 Q0 Q0 CL=3 DQ READ#0 ACT#1 1 2 Q1 Q1 Q1 0 CL=3 Q0 ACT#0 0 Y Q0 PRE#0 READ#1 Q1 ACT#0 PRE#1 Q0 READ#0 ACT#2 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 21 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst WRITE (multi bank) with AUTO-PRECHARGE BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRRD tRRD /RAS tRCD tRCD tRCD /CAS BL-1+ tWR + tRP BL-1+ tWR + tRP /WE CKE DQM A0-9 X X A10 X X X X A11 X X X X BA0,1 0 1 DQ Y 0 D0 ACT#0 ACT#1 Y X 1 D0 D0 WRITE#0 with AutoPrecharge D0 D1 D1 D1 Y X 0 0 1 D1 D0 D0 ACT#0 WRITE#1 with AutoPrecharge Y 1 D0 D0 D1 WRITE#0 ACT#1 WRITE#1 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 22 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Burst READ (multi bank) with AUTO-PRECHARGE BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK tRC /CS tRRD tRRD /RAS tRCD tRCD tRCD /CAS BL+tRP BL+tRP /WE CKE DQM DQM read latency =2 A0-9 X X A10 X X X X A11 X X X X BA0,1 0 1 Y Y 0 X 1 0 CL=3 DQ 0 CL=3 Q0 ACT#0 ACT#1 Y READ#0 with Auto-Precharge Q0 Q0 Q0 X Y 1 1 CL=3 Q1 ACT#0 READ#1 with Auto-Precharge Q1 Q1 Q1 Q0 Q0 READ#0 ACT#1 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 23 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Page Mode Burst Write (multi bank) BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9 X X A10 X X A11 X X BA0,1 0 1 DQ Y Y Y Y 0 0 1 0 D0 ACT#0 D0 WRITE#0 ACT#1 D0 D0 D0 D0 D0 D0 D1 D1 WRITE#0 D1 D1 D0 D0 D0 WRITE#0 WRITE#1 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 24 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Page Mode Burst Read (multi bank) BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM DQM read latency=2 A0-9 X X A10 X X A11 X X BA0,1 0 1 Y Y Y Y 0 0 1 0 CL=3 DQ CL=3 Q0 ACT#0 READ#0 ACT#1 Q0 Q0 Q0 CL=3 Q0 Q0 Q0 READ#0 Q0 Q1 Q1 Q1 Q1 READ#0 READ#1 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 25 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Write Interrupted by Write / Read BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD /RAS tRCD tCCD /CAS /WE CKE DQM A0-9 X X A10 X X A11 X X BA0,1 0 1 Y Y Y Y Y 0 0 0 1 0 CL=3 DQ D0 ACT#0 D0 D0 D0 D0 D0 D1 D1 Q0 Q0 Q0 Q0 WRITE#0 WRITE#0 WRITE#0 READ#0 ACT#1 WRITE#1 Burst Write can be interrupted by Write or Read of any active bank. Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 26 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Read Interrupted by Read / Write BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM DQM read latency=2 A0-9 X X A10 X X A11 X X BA0,1 0 1 DQ ACT#0 Y Y Y Y Y Y 0 0 0 1 0 0 Q0 Q0 Q0 Q0 Q0 Q0 Q1 Q1 Q0 D0 D0 READ#0 READ#0 READ#0 READ#0 WRITE#0 ACT#1 READ#1 blank to prevent bus contention Burst Read can be interrupted by Read or Write of any active bank. Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 27 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Write Interrupted by Precharge BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9 X X A10 X X X A11 X X X BA0,1 0 1 DQ Y 0 D0 ACT#0 Y D0 WRITE#0 ACT#1 D0 D0 X 1 0 D1 D1 1 1 1 D1 PRE#0 WRITE#1 PRE#1 Burst Write is not interrupted by Precharge of the other bank. Y ACT#1 D1 D1 WRITE#1 Burst Write is interrupted by Precharge of the same bank. Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 28 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Read Interrupted by Precharge BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRRD tRP /RAS tRCD tRCD /CAS /WE CKE DQM DQM read latency=2 A0-9 X X Y Y A10 X X X A11 X X X BA0,1 0 1 0 DQ Q0 ACT#0 READ#0 ACT#1 X 1 0 1 Q0 Q0 Q0 1 Q1 PRE#0 READ#1 PRE#1 Burst Read is not interrupted by Precharge of the other bank. Y 1 Q1 ACT#1 READ#1 Burst Read is interrupted by Precharge of the same bank. Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 29 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Mode Register Setting 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRSC tRC /RAS tRCD /CAS /WE CKE DQM A0-9 M X A10 X A11 X BA0,1 0 DQ 0 Y 0 D0 Auto-Ref (last of 8 cycles) MIT-DS-0321-0.0 D0 D0 D0 Mode ACT#0 WRITE#0 Register Setting Italic parameter indicates minimum case MITSUBISHI ELECTRIC 12/May. /1999 30 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Auto-Refresh BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS tRC /RAS tRCD /CAS /WE CKE DQM A0-9 X A10 X A11 X BA0,1 0 Y 0 DQ D0 D0 D0 Auto-Refresh ACT#0 Before Auto-Refresh, all banks must be idle state. After tRC from Auto-Refresh, all banks are idle state. D0 WRITE#0 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 31 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Self-Refresh 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK CLK can be stopped tRC+1 /CS /RAS /CAS /WE tSRX CKE CKE must be low to maintain Self-Refresh DQM A0-9 X A10 X A11 X BA0,1 0 DQ Self-Refresh Entry Before Self-Refresh Entry, all banks must be idle state. Self-Refresh Exit ACT#0 After tRC from Self-Refresh Exit, all banks are idle state. Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 32 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM DQM Write Mask BL=4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9 X A10 X A11 X BA0,1 0 Y Y Y 0 0 0 masked DQ D0 ACT#0 D0 WRITE#0 D0 D0 masked D0 WRITE#0 D0 D0 WRITE#0 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 33 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM DQM Read Mask BL=4, CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS /RAS tRCD /CAS /WE CKE DQM read latency=2 DQM A0-9 X A10 X A11 X BA0,1 0 Y Y Y 0 0 0 masked DQ Q0 ACT#0 READ#0 Q0 Q0 Q0 READ#0 masked Q0 Q0 Q0 READ#0 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 34 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Power Down 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS /RAS /CAS /WE Standby Power Down CKE Active Power Down CKE latency=1 DQM A0-9 X A10 X A11 X BA0,1 0 DQ Precharge All ACT#0 Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 35 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM CLK Suspend BL=4,CL=3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 CLK /CS /RAS tRCD /CAS /WE CKE CKE latency=1 CKE latency=1 DQM A0-9 X A10 X A11 X BA0,1 0 DQ Y Y 0 0 D0 ACT#0 D0 D0 D0 Q0 WRITE#0 READ#0 CLK suspended Q0 Q0 Q0 CLK suspended Italic parameter indicates minimum case MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 36 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Serial Presence Detect Table I Byte SPD enrty data SPD DATA(hex) 0 # of Serial PD Bytes Written during Production Function described 128 80 1 Total # of Bytes in SPD device 256 Bytes 08 2 Fundamental memory type SDRAM 04 3 # Row Addresses on this assembly A0-A11 0C 4 # Column Addresses on this assembly A0-A9 0A 5 # Module Banks on this assembly 1BANK 01 6 Data Width of this assembly... x64 40 7 ... Data Width continuation 0 00 8 Voltage interface standard of this assembly LVTTL 01 7.5ns 75 5.4ns 54 9 SDRAM Cycletime at Max. Supported CAS Latency (CL). Cycle time for CL=3 10 SDRAM Access from Clock tAC for CL=3 11 DIMM Configuration type (Non-parity,Parity,ECC) 12 Refresh Rate/Type non-parity 00 self refresh(15.625uS) 80 13 SDRAM width,Primary DRAM x8 08 14 Error Checking SDRAM data width n/a 00 01 8F Minimum Clock Delay,Back to Back Random Column Addresses 16 Burst Lengths Supported 1 1/2/4/8/Full page 17 # Banks on Each SDRAM device CAS# Latency 4bank 3 04 04 19 CS# Latency 0 01 20 Write Latency 0 01 21 SDRAM Module Attributes unbuffered 00 22 SDRAM Device Attributes:General Precharge All,Auto precharge Write1/Read Burst 0E 23 SDRAM Cycle time(2nd highest CAS latency) 15 18 N/A 00 tAC for CL=2 N/A 00 25 SDRAM Cycle time(3rd highest CAS latency) N/A 00 26 27 SDRAM Access form Clock(3rd highest CAS latency) N/A 23ns(22.5ns) 00 17 Cycle time for CL=2 24 SDRAM Access form Clock(2nd highest CAS latency) Precharge to Active Minimum 28 Row Active to Row Active Min. 15ns 0F 29 RAS to CAS Delay Min 23ns(22.5ns) 17 30 Active to Precharge Min 45ns 2D MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 37 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Serial Presence Detect Table II 31 Density of each bank on module 128MByte 20 32 Command and Address signal input setup time 1.5ns 15 33 Command and Address signal input hold time 0.8ns 08 34 Data signal input setup time 1.5ns 15 35 Data signal input hold time 0.8ns 08 36-61 62 Superset Information (may be used in future) SPD Revision option JEDEC2 00 02 63 Checksum for bytes 0-62 64-71 Manufactures Jedec ID code per JEP-108E MITSUBISHI 1CFFFFFFFFFFFFFF 72 Manufacturing location Miyoshi,Japan 01 Tajima,Japan 02 NC,USA 03 A3 Germany 04 4D4831365336345048422D36202020202020 73-90 91-92 Manufactures Part Number Revision Code MH16S64PHB-6 PCB revision 93-94 Manufacturing date year/week code yyww rrrr 95-98 Assembly Serial Number serial number ssssssss 99-125 126 Manufacture Specific Data Intetl specification frequency option 00 64 127 Intel specification CAS# Latency support CL=3,AP,CK0,2 AD 128+ Unused storage locations open 00 MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 38 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM 133.35 3 8.89 6.35 11.43 1.27 6.35 36.83 24.495 3 54.61 42.18 127.35 34.925 3.9Max 1.27 MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 39 MITSUBISHI LSIs MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them. Trouble with semiconductors consideration to safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive,auxiliary circuits,(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1.These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application;they do not convey any license under any intellectual property rights,or any other rights,belonging to Mitsubishi Electric Corporation or a third party. 2.Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty's rights,originating in the use of any product data,diagrams,charts or circuit application examples contained in these materials. 3.All information contained in these materials,including product data, diagrams and charts,represent information on products at the time of publication of these materials,and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubish Semiconductor product distributor for the latest product information before purchasing a product listed herein. 4.Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for special applications,such as apparatus or systems for transportation, vehicular,medical,aerospace,nuclear,or undersea repeater use. 5.The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. 6.If these products or technologies are subject the Japanese export control restrictions,they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 7.Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. MIT-DS-0321-0.0 MITSUBISHI ELECTRIC 12/May. /1999 40