Fairchild MPF102 N-channel rf amplifier Datasheet

MPF102
MPF102
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
low ON resistance analog switching.
• Sourced from process 50.
TO-92
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
25
Units
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ +155
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
V(BR)GSS
Gate-Source Breakdown Voltage
IG = -1.0µA, VDS = 0
IGSS
Gate Reverse Current
VGS = -15V, VDS = 0
Vgs(off)
Gate-Source Cutoff Voltage
VDS = 15V, ID = 2nA
Vgs
Gate-Source Voltage
VDS = 15V, ID = 200µA
Min.
Max.
Units
-2.0
nA
-8.0
V
-7.5
V
2.0
20
mA
2000
7500
µS
-25
-0.5
V
On Characteristics *
IDSS
Zero-Gate Voltage Drain Current
VDS = 15V, VGS = 0
gfs
Forward Transconductance
VGS = 0V, VDS = 15V, f = 1kHz
Small Signal Characteristics
Ciss
Common-Source Input Capacitance
VGS = 0, VDS = 15V, f = 1MHz
7.0
pF
Crss
Common-Source Reverse Transfer
Capacitance
VGS = 0, VDS = 15V, f = 1MHz
3.0
pF
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
PD
Total Device Dissipation
Derate above 25°C
Parameter
Max.
350
2.8
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, October 2004
MPF102
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, October 2004
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Not In Production
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The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I13
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