MURD340T4G, NRVUD340T4G Switch-mode PowerRectifier DPAK Surface Mount Package www.onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • ULTRAFAST RECTIFIER 3 A, 400 V Low Forward Voltage Drop Low Leakage Ultra−Fast Recovery Time NRVUD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C 1 4 3 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • MARKING DIAGRAM 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Peak Reverse Voltage Symbol Value Unit VR 400 V Average Rectified Forward Current IF(AV) 3 A Nonrepetitive Peak Surge Current IFSM 75 A TJ, Tstg −55 to +175 °C Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. U340 A Y WW G AYWW U 340G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MURD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel NRVUD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 3 1 Publication Order Number: MURD340/D MURD340T4G, NRVUD340T4G THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case Thermal Resistance − Junction−to−Ambient (Note 1) 1. Rating applies when surface mounted on a 700 mm2, Symbol Value Unit RqJC 2 °C/W RqJA 49 °C/W Symbol Value Unit 1 oz Cu heat spreader. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 3.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Rated VR) (TJ = 25°C, 400 V) (TJ = 150°C, 400 V) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C) trr V 1.15 0.92 mA 5 500 ns 50 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 100.0 10.0 175°C 150°C 25°C 1.0 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) 1.4 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 100.0 10.0 175°C 150°C 25°C 1.0 0.1 0.4 0.5 Figure 1. Typical Forward Voltage 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.4 MURD340T4G, NRVUD340T4G TYPICAL CHARACTERISTICS 1.0E−02 1.0E−02 1.0E−03 1.0E−03 1.0E−04 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 175°C 175°C 1.0E−05 150°C 1.0E−06 1.0E−07 25°C 1.0E−08 1.0E−09 150°C 1.0E−04 1.0E−05 1.0E−06 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0.0 50 100 150 200 250 300 1.0E−10 0.0 50 100 VR, REVERSE VOLTAGE (V) Po, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 10 20 40 60 80 100 120 140 160 180 200 3.5 3.0 SQUARE WAVE 2.5 1.5 1.0 0.5 0 0 0.5 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 5.0 DC SQUARE WAVE 2.0 1.0 0 110 120 130 140 150 160 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 6. Power Dissipation RqJC = 2°C/W 100 1.0 Io, AVERAGE FORWARD CURRENT 6.0 3.0 DC 2.0 Figure 5. Typical Capacitance TJ = 175°C/W 300 4.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 250 Figure 4. Maximum Reverse Voltage 100 0 200 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Voltage 1.0 150 170 180 6.0 RqJC = 2°C/W 5.0 TJ = 175°C/W 4.0 DC 3.0 SQUARE WAVE 2.0 1.0 0 0 TC, CASE TEMPERATURE (°C) 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating, Case Figure 8. Current Derating, Ambient www.onsemi.com 3 MURD340T4G, NRVUD340T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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