ON NJW3281G Complementary npn-pnp silicon power bipolar transistor Datasheet

NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
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15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
•
•
•
•
•
•
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are Pb−Free and are RoHS Compliant
•
•
•
•
•
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
NPN
PNP
Benefits
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
EMITTER 3
Applications
EMITTER 3
• High−End Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
♦
•
MARKING
DIAGRAM
♦
4
NJWxxxG
AYWW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
250
Vdc
IC
15
Adc
ICM
30
Adc
Base Current − Continuous
IB
1.6
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
TJ, Tstg
− 65 to +150
°C
Rating
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
TO−3P
CASE 340AB
STYLES 1,2,3
1
2
1
3
xxxx
G
A
Y
WW
2
3
= 0281 or 0302
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Device
Package
Shipping
Thermal Resistance, Junction−to−Case
RqJC
0.625
°C/W
NJW3281G
RqJA
40
°C/W
TO−3P
(Pb−Free)
30 Units/Rail
Thermal Resistance, Junction−to−Ambient
NJW1302G
TO−3P
(Pb−Free)
30 Units/Rail
Characteristic
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NJW3281/D
NJW3281G (NPN) NJW1302G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
250
−
−
−
−
50
−
−
5
4
−
−
75
75
75
60
45
−
−
−
−
−
150
150
150
−
−
−
0.4
0.6
−
−
1.5
−
30
−
−
−
600
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
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2
MHz
pF
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
NPN NJW3281G
50
TJ = 25°C
ftest = 1 MHz
80
VCE = 10 V
40
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
60
5V
30
20
10
0
0.1
1
VCE = 10 V
60
5V
40
20
0
10
TJ = 25°C
ftest = 1 MHz
0.1
IC, COLLECTOR CURRENT (A)
1
IC, COLLECTOR CURRENT (A)
Figure 2. Typical Current Gain
Bandwidth Product
Figure 1. Typical Current Gain
Bandwidth Product
1000
1000
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 5 V
125°C
25°C
100
10
0.01
−30°C
0.1
1
10
IC, COLLECTOR CURRENT (A)
125°C
25°C
100
−30°C
10
0.1
100
Figure 3. DC Current Gain
1
10
IC, COLLECTOR CURRENT (A)
1000
VCE = 20 V
hFE, DC CURRENT GAIN
VCE = 20 V
hFE, DC CURRENT GAIN
100
Figure 4. DC Current Gain
1000
125°C
25°C
100
−30°C
10
0.01
10
0.1
1
10
100
10
100
125°C
25°C
−30°C
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain
Figure 6. DC Current Gain
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3
10
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
COLLECTOR−EMITTER SATURATION VOLTAGE (V)
5A
3A
1A
0.1
0.5 A
IC = 0.1 A
TJ = 25°C
0.01
0.001
1
SATURATION VOLTAGE (V)
NPN NJW3281G
1
0.01
0.1
1
0.1
3A
0.5 A
IC = 0.1 A
TJ = 25°C
0.01
0.1
1
IB, BASE CURRENT (A)
Figure 7. Saturation Region
Figure 8. Saturation Region
1
25°C
0.1
−30°C
125°C
IC/IB = 10
0.1
25°C
−30°C
125°C
0.1
1
10
100
0.01
0.01
IC, COLLECTER CURRENT (A)
0.1
1
10
IC, COLLECTER CURRENT (A)
Figure 9. VCE(sat), Collector−Emitter Saturation
Voltage
Figure 10. VCE(sat), Collector−Emitter
Saturation Voltage
VCE = 5 V
BASE−EMITTER VOLTAGE (V)
1.4
1.2
1.0
0.8
0.6
−30°C
25°C
0.4
125°C
0.2
0.0
0.01
100
1.6
1.6
BASE−EMITTER VOLTAGE (V)
1A
IB, BASE CURRENT (A)
IC/IB = 10
0.01
0.01
5A
0.01
0.001
SATURATION VOLTAGE (V)
COLLECTOR−EMITTER SATURATION VOLTAGE (V)
1
0.1
1
10
100
1.4
VCE = 5 V
1.2
1.0
0.8
0.6
−30°C
25°C
0.4
125°C
0.2
0.0
0.01
0.1
1
10
IC, COLLECTER CURRENT (A)
IC, COLLECTER CURRENT (A)
Figure 11. VBE(on), Base−Emitter Voltage
Figure 12. VBE(on), Base−Emitter Voltage
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4
100
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
TJ = 25°C
fTest = 1 MHz
1000
800
600
400
200
0
0
10
20
30
40
50
60
70
80
90
800
600
400
200
0
20
40
60
80
VCB, COLLECTER−BASE VOLTAGE (V)
VCB, COLLECTER−BASE VOLTAGE (V)
Figure 13. Output Capacitance
Figure 14. Output Capacitance
100
10000
TJ = 25°C
fTest = 1 MHz
10000
Cib, INPUT CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TJ = 25°C
fTest = 1 MHz
1000
0
100
12000
8000
6000
4000
2000
NPN NJW3281G
1200
Cob, OUTPUT CAPACITANCE (pF)
Cob, OUTPUT CAPACITANCE (pF)
1200
0
1
2
3
4
5
6
7
8
9
10
TJ = 25°C
fTest = 1 MHz
8000
6000
4000
2000
0
2
4
6
8
VEB, EMITTER−BASE VOLTAGE (V)
VEB, EMITTER−BASE VOLTAGE (V)
Figure 15. Input Capacitance
Figure 16. Input Capacitance
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5
10
NJW3281G (NPN) NJW1302G (PNP)
PNP NJW1302G
NPN NJW3281G
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
10 mSec
10
100 mSec
1 Sec
1.0
0.1
10 mSec
10
100 mSec
1 Sec
1.0
0.1
1.0
100
10
VCE, COLLECTOR EMITTER (VOLTS)
1000
1.0
Figure 17. Active Region Safe Operating Area
100
10
VCE, COLLECTOR EMITTER (VOLTS)
1000
Figure 18. Active Region Safe Operating Area
The data of Figures 17 and 18 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
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6
NJW3281G (NPN) NJW1302G (PNP)
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
B
A
B
C
Q
4
SEATING
PLANE
U
E
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
L
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
U
W
(3°)
P
K
1
2
3
3X
D
0.25
G
M
A B
S
H
J
F
W
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
MIN
NOM
MAX
19.70
19.90
20.10
15.40
15.60
15.80
4.60
4.80
5.00
0.80
1.00
1.20
1.45
1.50
1.65
1.80
2.00
2.20
5.45 BSC
1.20
1.40
1.60
0.55
0.60
0.75
19.80
20.00
20.20
18.50
18.70
18.90
3.30
3.50
3.70
3.10
3.20
3.50
5.00 REF
2.80
3.00
3.20
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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