HERMETIC SILICON PHOTOTRANSISTOR L14N1 L14N2 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1 3 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) Ø0.021 (0.53) 3X BASE 2 45° NOTES: 1 EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES • Hermetically sealed package • Wide reception angle • Device can be used as a photodiode by using the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) L14N2 (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Collector-Base leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14N1 On-State Collector Current L14N2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14N1 Saturation Voltage L14N2 www.fairchildsemi.com (TA =25°C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 VCB = 25 V, Ee = 0 BVCEO BVEBO BVCBO ICEO ICBO θ IC(ON) IC(ON) ICB(ON) tr tf VCE(SAT) VCE(SAT) 30 5 40 — — Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 1.5 mW/cm2, VCB = 5 V(7,8) IC = 10 mA, VCC = 5 V, RL =100 Ω IC = 10 mA, VCC = 5 V, RL =100 Ω IC = 0.8 mA, Ee = 3.0 mW/cm2(7,8) IC = 1.6 mA, Ee = 3.0 mW/cm2(7,8) 2 OF 4 TYP MAX UNITS — — — 100 25 0.40 0.40 V V V nA nA Degrees mA mA µA µs µs V V 6/01/01 DS300308 ±40 1.0 2.0 — 5.0 14 16 — — HERMETIC SILICON PHOTOTRANSISTOR L14N1 Figure 1. Light Current vs. Collector to Emitter Voltage 4 NORMALIZED TO: Ee = 5 mW/cm2 VCE = 5 V TA = 25°C PULSED tp = 300 µsec 2 1 .8 .6 .4 Figure 2. Normalized Light Current vs. Radiation Ee = 20 mW/cm2 IL, NORMALIZED LIGHT CURRENT IL, NORMALIZED LIGHT CURRENT 10 8 6 4 Ee = 10 mW/cm2 Ee = 5 mW/cm2 Ee = 2 mW/cm2 Ee = 1 mW/cm2 .2 Ee = 0.5 mW/cm2 .1 .08 .06 .04 .02 .01 .01 .02 L14N2 .04 .06 .08 .1 .2 2 1 8 6 4 2 Ee = 0.2 mW/cm2 .02 Ee = 0.1 mW/cm2 .01 .1 .4 .6 .8 1 2 4 6 8 10 NORMALIZED TO: Ee = 5 mW/cm2 VCE = 5 V TA = 25°C PULSED tp = 300 µsec 1 .08 .06 .04 .2 .4 .6 .8 1 2 4 6 8 10 20 Ee - TOTAL IRRADIANCE IN mW/cm2 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. Light Current vs. Temperature 4 IF = 50 mA Figure 3. Dark Current vs. Temperature 104 103 102 10 NORMALIZED TO: TA = 25°C VCE = 10 V 1 0.1 IF = 20 mA IF = 10 mA 2 IL, NORMALIZED LIGHT CURRENT ICEO, NORMLIZED DARK CURRENT 10 5 20 10 0 30 40 50 60 70 80 90 1 .8 .6 IF = 5 mA .4 IF = 2 mA .2 IF = 1 mA .1 .08 .06 NORMALIZED TO: IF = 5 mA VCE = 5 V TA = 25°C .02 PULSED GAAS SOURCE (1N6265) TJ = TA, tp = 300 µsec .01 -50 -26 0 .04 100 TA, TEMPERATURE (°C) IF = 0.5 mA 26 50 75 100 TA, TEMPERATURE (°C) Figure 6. Switching Speed vs. Bias Figure 5. Angular and Spectral Response 1 80 0.8 60 0.6 40 0.4 20 0 0.2 -40 -20 0 20 40 500 θ, ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) 700 900 λ, WAVE LENGTH (NANOMETERS) 0 1100 tr and tf, NORMALIZED SWITCHING LIGHT SPEED RELATIVE OUTPUT (%) 100 100 80 60 40 RL = 1000 Ω 6/01/01 RL = 250 Ω RL = 500 Ω RL = 250 Ω 10 8 6 4 2 1 .8 .6 .4 .2 .1 .1 RL = 100 Ω RL = 100 Ω NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 Ω TA = 25°C .2 .4 .6 .8 1 RISE TIME DS300308 RL = 1000 Ω RL = 500 Ω 20 3 OF 4 NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 Ω TA = 25°C RL = 50 Ω 2 4 8 10 .1 .2 .4 .6 .8 1 ICE, OUTPUT CURRENT (mA) RL = 50 Ω 2 4 6 8 10 FALL TIME www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 L14N2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300308 6/01/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 www.fairchildsemi.com