Central CXT7820 Surface mount very low vce(sat) pnp silicon transistor Datasheet

CXT7820
SURFACE MOUNT
VERY LOW VCE(SAT)
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT7820 is a
very low VCE(SAT) PNP transistor designed for
applications where electrical and thermal efficiency
are prime requirements. Packaged in an industry
standard SOT-89 case, this device brings updated
electrical specifications and characteristics suitable for
the most demanding designs.
MARKING: FULL PART NUMBER
SOT-89 CASE
• Device is Halogen Free by design
FEATURES:
APPLICATIONS:
• High Current (IC=1.0A)
• VCE(SAT)=0.34V MAX @ IC=1.0A
• SOT-89 surface mount package
• Complementary NPN device: CXT3820
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
150
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
80
60
5.0
1.0
2.0
300
1.2
-65 to +150
104
MAX
100
100
UNITS
V
V
V
A
A
mA
W
°C
°C/W
0.175
0.18
0.34
1.1
0.9
UNITS
nA
nA
V
V
V
V
V
V
V
V
15
MHz
pF
R1 (23-February 2010)
CXT7820
SURFACE MOUNT
VERY LOW VCE(SAT)
PNP SILICON TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R1 (23-February 2010)
w w w. c e n t r a l s e m i . c o m
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