FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.1V @ IC = 20A • High input impedance • Fast switching • RoHS compliant Applications • PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V 25oC IC Collector Current @ TC = 90 A IC pulse(1) Pulsed Collector Current @ TC = 25oC 220 A Pulsed Collector Current 25oC 330 A o W IC pulse(2) PD @ TC = Maximum Power Dissipation @ TC = 25 C 223 Maximum Power Dissipation @ TC = 100oC 89 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C oC 300 Thermal Characteristics Symbol Parameter Typ. Max. Units oC/W RθJC(IGBT) Thermal Resistance, Junction to Case - 0.56 RθJA Thermal Resistance, Junction to Ambient - 40 o C/W Notes: (1) Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D<0.01, Pulse width<5usec *IC pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation FGA90N33AT Rev. A 1 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT April 2008 Device Marking Device Package Packaging Type FGA90N33AT FGA90N33ATTU TO-3P Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 330 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 2.5 4.0 5.5 V IC = 20A, VGE = 15V - 1.1 1.4 V IC = 45A, VGE = 15V, - 1.3 - V IC = 90A, VGE = 15V, TC = 25oC - 1.6 - V IC = 90A, VGE = 15V, TC = 125oC - 1.7 - V - 2200 - pF - 135 - pF - 100 - pF - 23 - ns - 40 - ns - 100 - ns - 180 240 ns - 20 - ns - 40 - ns On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA90N33AT Rev. A VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A, VGE = 15V 2 - 110 - ns - 250 300 ns - 95 - nC - 12 - nC - 40 - nC www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 o TC = 25 C 20V Figure 2. Typical Output Characteristics 160 10V o TC = 125 C 9V 120 Collector Current, IC [A] Collector Current, IC [A] 15V 12V 8V 80 7V 40 9V 20V 120 7V 80 40 VGE = 6V VGE = 6V 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 0 Figure 3. Typical Saturation Voltage Characteristics 5 160 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 120 Collector Current, IC [A] Collector Current, IC [A] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 160 o TC = 125 C 80 40 TC = 25 C 120 T = 125oC C 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 80 40 0 4 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 1.8 90A 1.6 1.4 1.2 40A 1.0 IC = 20A 12 Figure 6. Saturation Voltage vs. VGE 2.0 Collector-Emitter Voltage, VCE [V] 8V 15V 12V 10V Common Emitter o TC = 25 C 16 12 8 90A 40A 4 IC = 20A 0.8 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGA90N33AT Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 4000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter 16 Cies 3000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 2000 Coes Cres 1000 40A o TC = 25 C 4 90A IC = 20A 0 0.1 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Gate charge Characteristics 1 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 500 Common Emitter 10µs o TC = 25 C 100 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 9 VCC = 100V 200V 6 3 100µs 1ms 10 10 ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 0 0 20 40 60 Gate Charge, Qg [nC] 80 1 100 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 200 Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C Switching Time [ns] 100 1000 Switching Time [ns] tr td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A td(off) tf 100 o TC = 25 C o TC = 125 C 10 0 FGA90N33AT Rev. A 20 40 60 80 Gate Resistance, RG [Ω] 10 100 0 4 20 40 60 Gate Resistance, RG [Ω] 80 100 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 400 Figure 14. Turn-off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C tr 100 tf Switching Time [ns] Switching Time [ns] o TC = 125 C td(on) td(off) 100 100 10 0 20 40 60 80 100 0 Collector Current, IC [A] 20 40 60 80 Collector Current, IC [A] 100 Figure 15. Turn off Switching SOA Characteristics Collector Current, IC [A] 400 100 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 600 Collector-Emitter Voltage, VCE [V] FGA90N33AT Rev. A 5 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT Typical Performance Characteristics FGA90N33AT 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 16.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 1E-5 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA90N33AT Rev. A 6 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT Mechanical Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FGA90N33AT Rev. A 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FGA90N33AT Rev. A 8 www.fairchildsemi.com FGA90N33AT 330V, 90A PDP Trench IGBT TRADEMARKS