Panasonic MAS3795 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MAS3795
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits
0.10+0.05
–0.02
0.33+0.05
–0.02
2
(0.40) (0.40)
0.80±0.05
1.20±0.05
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC)
IF
30
mA
Peak forward current
IFM
150
mA
0.15 max.
0 to 0.01
0.52±0.03
5°
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
1
0.23+0.05
–0.02
0.15 min.
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF optimum for low voltage rectification
VF = < 0.3 V (at IF = 1 mA)
• SSS-Mini type 3-pin package
0.15 min.
0.80±0.05
■ Features
1.20±0.05
3
1: Anode
2: N.C.
3: Cathode
SSSMini3-F1 Package
Marking Symbol: M2
Junction temperature
Tj
125
°C
Internal Connection
Storage temperature
Tstg
−55 to +125
°C
3
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
30
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.3
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: June 2002
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
SKH00117AED
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
MAS3795
IF  VF
IR  V R
VF  Ta
104
103
1.0
Ta = 125°C
75°C 25°C
–20°C
10
1
0.8
75°C
102
25°C
10
10−1
1
10−2
10−1
Forward voltage VF (V)
Ta = 125°C
103
Reverse current IR (µA)
Forward current IF (mA)
102
IF = 30 mA
0.6
10 mA
0.4
0.2
1 mA
0
0.4
0.8
1.2
1.6
2.0
2.4
0
5
IR  T a
25
30
3V
1V
102
10
1
2.5
2.0
1.5
1.0
0.5
0
0
40
80
120
160
Ambient temperature Ta (°C)
200
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00117AED
0
40
80
120
160
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
Terminal capacitance Ct (pF)
103
Reverse current IR (µA)
20
3.0
VR = 25 V
2
15
Ct  VR
104
10−1
−40
10
Reverse voltage VR (V)
Forward voltage VF (V)
0
−40
30
200
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY
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