MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HK • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17.5 1.3 B1X B1 E1 30 C1 C2E1 80±0.25 9.5 (12) (12) (12) Tab#110, t=0.5 20.5 B2X B2 E2 28 20.5 8 LABEL 29 +1.5 – 0.5 3–M5 9±0.1 61 B2X E2 E2 B2 9 23 48±0.25 23 18.8 6 12 6 12 4–φ5.5 C2E1 B1X E2 C1 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current –IC PC Parameter Conditions 7 V DC 100 A Collector reverse current DC (forward diode current) 100 A Collector dissipation TC=25°C 620 W IB Base current DC 6 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.47~1.96 N·m 15~20 kg·cm 420 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 2.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 2.0 mA IEBO Emitter cutoff current VEB=7V — — 100 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=100A (diode forward voltage) — — 1.75 V hFE DC current gain IC=100A, VCE=2V/5V 75/100 — — — — — 2.0 µs Switching time VCC=300V, IC=100A, IB1=–IB2=2A — — 12 µs — — 3.0 µs Transistor part (per 1/2 module) — — 0.2 °C/ W Diode part (per 1/2 module) — — 0.65 °C/ W Conductive grease applied (per 1/2 module) — — 0.1 °C/ W IC=100A, IB=1.3A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 IB=2.0A DC CURRENT GAIN hFE 160 IB=1.0A 120 IB=0.6A IB=0.4A 80 IB=0.2A 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.0V Tj=25°C 10 0 7 5 4 3 2 10 –1 1.0 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 3.0 10 2 7 5 3 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 –1 2 IC=50A 1 Tj=25°C Tj=125°C IC=70A 0 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) IB=1.3A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 VCE(sat) COLLECTOR CURRENT IC (A) 5 IC=150A VBE(sat) 10 0 7 5 4 3 2 VBE (V) IC=100A VCE=2.0V 10 1 7 5 3 Tj=25°C 2 Tj=125°C 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 2 7 5 3 2 ts VCC=300V IB1=–IB2=2A Tj=25°C Tj=125°C 10 1 7 5 3 2 ton 10 0 tf 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 10 1 7 5 4 3 2 200 ts COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 2 tf 10 0 VCC=300V 7 IB1=2A 5 IC=100A 4 Tj=25°C 3 Tj=125°C 2 –1 10 2 3 4 5 7 10 0 175 BASE REVERSE CURRENT –IB2 (A) 100 75 50 25 10 1 7 5 3 2 TC=25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.12 0.08 0.04 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) 0.16 TIME (s) SECOND BREAKDOWN AREA 90 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.20 VCE (V) DERATING FACTOR OF F. B. S. O. A. DERATING FACTOR (%) s 0µ 50 s 1m s m 10 C COLLECTOR CURRENT IC (A) tw=50µs 100µs COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 100 200 300 400 500 600 700 800 100 D 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 –5A 125 0 2 3 4 5 7 10 1 IB2=–2A Tj=125°C 150 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (°C) Tj=25°C Tj=125°C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 VCC=300V 5 IB1=–IB2=2A Tj=25°C 4 Tj=125°C 3 2 10 1 7 5 4 3 2 10 0 10 0 10 1 Irr trr (µs) 1000 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr trr 2 3 4 5 7 10 1 10 –1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE ) 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0 Zth (j–c) (°C/ W) 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999