MITSUBISHI QM15DX-H

MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-H
•
•
•
•
•
IC
Collector current .......................... 15A
VCEX Collector-emitter voltage ........... 600V
hFE
DC current gain............................... 50
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
70
E1C2
E1
B1
C1
E2
E2
E2
E1
E2
B2
φ5.5
60
Tr1
Tr2
B1
B2
Tab#110, t=0.5
8
8
6.35 2.8
φ1.2
26
11
Tab#250,
t=0.8
8
4.6
8
LABEL
15
φ1.7
E1C2
27
C1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25°C, unless otherwise noted)
Parameter
Ratings
Unit
VCEX (SUS)
Collector-emitter voltage
IC=1A, VEB=2V
600
V
VCEX
Collector-emitter voltage
VEB=2V
600
V
VCBO
Collector-base voltage
Emitter open
600
V
VEBO
Emitter-base voltage
Collector open
7
V
IC
Collector current
DC
15
A
–IC
Collector reverse current
DC (forward diode current)
15
A
PC
Collector dissipation
TC=25°C
100
W
IB
Base current
DC
0.9
A
–ICSM
Surge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)
150
A
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Symbol
Conditions
Charged part to case, AC for 1 minute
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
2500
V
1.47~1.96
N·m
15~20
kg·cm
75
g
(Tj=25°C, unless otherwise noted)
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEX
Collector cutoff current
VCE=600V, VEB=2V
—
—
1.0
mA
ICBO
Collector cutoff current
VCB=600V, Emitter open
—
—
1.0
mA
IEBO
Emitter cutoff current
VEB=7V
—
—
80
mA
VCE (sat)
Collector-emitter saturation voltage
—
—
2.0
V
VBE (sat)
Base-emitter saturation voltage
—
—
2.5
V
–VCEO
Collector-emitter reverse voltage
–IC=15A (diode forward voltage)
—
—
1.5
V
hFE
DC current gain
IC=15A, VCE=2V/5V
50/100
—
—
—
—
—
1.5
µs
Switching time
VCC=300V, IC=15A, IB1=–IB2=0.3A
—
—
8.0
µs
—
—
3.0
µs
Transistor part (per 1/2 module)
—
—
1.2
°C/ W
Diode part (per 1/2 module)
—
—
2.5
°C/ W
Conductive grease applied (per 1/2 module)
—
—
0.25
°C/ W
IC=15A, IB=0.3A
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
25
20
DC CURRENT GAIN hFE
IB=0.4A
IB=0.2A
IB=0.1A
15
IB=0.06A
10
IB=0.02A
5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
10 0
7
5
4
3
2
1.6
2.0
2.4
2.8
BASE-EMITTER VOLTAGE
VCE=2.0V
10 2
7
5
4
3
2
3.2
10 1
7
5
4
3
2
Tj=25°C
Tj=125°C
IB=0.3A
VBE(sat)
10 0
7
5
4
3
2
VCE(sat)
10 –1
10 0
VBE (V)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
ton, ts, tf (µs)
5
4
3
IC=5A
IC=10A
IC=15A
SWITCHING TIME
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
2 3 4 5 7 10 2
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
2
1
0
2 3 4 5 7 10 1
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
BASE CURRENT IB (A)
VCE=2.0V
Tj=25°C
10 –1
1.2
Tj=25°C
Tj=125°C
VCE=5.0V
VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 1
7
5
4
3
2
10 3
7
5
4
3
2
10 1
10 0
5
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
Tj=25°C
Tj=25°C
Tj=125°C
7 10 –2
2 3 4 5 7 10 –1
2 3 4 5 7
BASE CURRENT IB (A)
10 1
7
5
4
3
2
ts
tf
10 0
7 ton
5
4
3
2
10 0
2 3 4 5 7 10 1
VCC=300V
IB1=–IB2=0.3A
Tj=25°C
Tj=125°C
2 3 4 5 7 10 2
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
40
COLLECTOR CURRENT IC (A)
SWITCHING TIME
ts, tf (µs)
3
2
ts
10 1
7
5
4
3
2
tf
10 0 VCC=300V
IB1=0.3A
7 IC=15A
5
Tj=25°C
4
Tj=125°C
3
3 4 5 7 10 –1 2 3 4 5 7 10 0
30
BASE REVERSE CURRENT –IB2 (A)
Tj=125°C
10
600
800
COLLECTOR-EMITTER VOLTAGE
VCE (V)
TC=25°C
NON-REPETITIVE
10 0
7
5
3
2
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
SECOND
BREAKDOWN
AREA
70
60
50
COLLECTOR
DISSIPATION
40
30
20
0
0
VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 4 5 710 1 2 3 4 5 7
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0
TIME (s)
80
10
20
40
60
80 100 120 140 160
CASE TEMPERATURE
COLLECTOR REVERSE CURRENT –IC (A)
COLLECTOR-EMITTER VOLTAGE
Zth (j–c) (°C/ W)
400
DERATING FACTOR OF F. B. S. O. A.
DERATING FACTOR (%)
s
0µ
s
0µ
tw 1m
=1 s
0m
s
50
7
5
3
2
200
90
10
10 1
0
100
DC
COLLECTOR CURRENT IC (A)
FORWARD BIAS SAFE OPERATING AREA
10 2
7
5
3
2
–1A
20
0
2 3
IB2=–0.5A
10 2
7
5
4
3
2
TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
Tj=25°C
Tj=125°C
10 1
7
5
4
3
2
10 0
0.4
0.8
1.2
1.6
2.0
2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
180
160
140
120
100
80
60
40
20
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
10 2
7
Tj=25°C
5
Tj=125°C
3 VCC=300V
2 IB1=–IB2=0.3A
10 1
7
Irr
5
3
2
10 2
10 1
trr (µs)
200
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
10 0
10 0
7
Qrr
5
3
2
trr
10 –1
10 –1
10 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
10 0 2 3 4 5 710 1 2 3 4 5
Zth (j–c) (°C/ W)
3.0
2.0
1.0
0
10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –12 3 4 5 7 10 0
TIME (s)
Feb.1999